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Ray Publish 0.1.0 4152bbd 3d ago

MMDT3906DW

GOODWORK · Bipolar (BJT) · SOT-363

MMDT3906DW from GOODWORK, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E1 passive Emitter of transistor 1 (PNP), shown at pin 1 of the SOT-363 pin diagram; VEBO limit -5 V.
2 B1 input Base of transistor 1 (PNP), shown at pin 2 of the SOT-363 pin diagram; base cut-off current max -50 nA at VEB=-5 V.
3 C2 passive Collector of transistor 2 (PNP), shown at pin 3 of the SOT-363 pin diagram; VCEO -40 V, continuous IC -0.2 A.
4 E2 passive Emitter of transistor 2 (PNP), shown at pin 4 of the SOT-363 pin diagram; VEBO limit -5 V.
5 B2 input Base of transistor 2 (PNP), shown at pin 5 of the SOT-363 pin diagram; base cut-off current max -50 nA at VEB=-5 V.
6 C1 passive Collector of transistor 1 (PNP), shown at pin 6 of the SOT-363 pin diagram; VCEO -40 V, continuous IC -0.2 A.

Key specifications

Parameter Value
Manufacturer GOODWORK
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter breakdown voltage V(BR)CEO -40 V IC=-1mA,IB=0 2
Collector-base breakdown voltage V(BR)CBO -40 V IC=-10μA,IE=0 2
Emitter-base breakdown voltage V(BR)EBO -5 V IE=-10μA,IC=0 2
Collector cut-off current ICEX -50 nA VCE=-30V,VEB(OFF)=-3V 2
Base cut-off current IEBO -50 nA VEB=-5V,IC=0 2
DC current gain hFE(1) 60 VCE=-1V,IC=-0.1mA 2
DC current gain hFE(2) 80 VCE=-1V,IC=-1mA 2
DC current gain hFE(3) 100 300 VCE=-1V,IC=-10mA 2
DC current gain hFE(5) 30 VCE=-1V,IC=-100mA 2
Collector-emitter saturation voltage VCE(sat)1 -0.25 V IC=-10mA,IB=-1mA 2
Collector-emitter saturation voltage VCE(sat)2 -0.4 V IC=-50mA,IB=-5mA 2
Base-emitter saturation voltage VBE(sat)1 -0.65 -0.85 V IC=-10mA,IB=-1mA 2
Base-emitter saturation voltage VBE(sat)2 -0.95 V IC=-50mA,IB=-5mA 2
Transition frequency fT 250 MHz VCE=-20V,IC=-10mA,f=100MHz 2
Collector output capacitance Cob 4.5 pF VCB=-5V,IE=0,f=1MHz 2
Noise figure NF 4 dB VCE=-5V,Ic=-0.1mA,f=1KHz,Rg=1KΩ 2
Delay time td 35 nS 2
Rise time tr 35 nS VCC=-3V, VBE=0.5V, IC=-10mA, IB1=-IB2=-1mA 2
Storage time tS 225 nS 2
Fall time tf 75 nS VCC=-3V, IC=-10mA, IB1=-IB2=-1mA 2
Collector-emitter voltage VCEO -40 V Ta=25℃ 1
Collector-base voltage VCBO -40 V Ta=25℃ 1
Emitter-base voltage VEBO -5 V Ta=25℃ 1
Collector current, continuous IC -0.2 A Ta=25℃ 1
Collector power dissipation PC 0.2 W Ta=25℃ 1
Junction temperature TJ 150 ℃ Ta=25℃ 1
Storage temperature Tstg -55 150 ℃ Ta=25℃ 1
Thermal resistance, junction to ambient air RθJA 625 ℃/W Ta=25℃ 1

CAD (KiCad official)

  • Symbol: MMDT3906DW
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: mmdt3906dw-etched.step / mmdt3906dw-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmdt3906dw.step / mmdt3906dw.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOODWORK datasheet (5 pp, sha256 afc6e6e0d0dea569, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF