component
MMDT3906-7-F
Public Made by Adomby adom
Diodes Incorporated Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| mmdt3906-7-f-etched.glb | 17d ago |
| mmdt3906-7-f-etched.step | 17d ago |
| mmdt3906-7-f-hero.glb | 17d ago |
| mmdt3906-7-f-hero.overlay.json | 17d ago |
| mmdt3906-7-f.glb | 17d ago |
| mmdt3906-7-f.kicad_mod | 17d ago |
| mmdt3906-7-f.kicad_sym | 17d ago |
| mmdt3906-7-f.lbr | 17d ago |
| mmdt3906-7-f.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
MMDT3906-7-F
Diodes Incorporated · Bipolar (BJT) · SOT-363
MMDT3906-7-F from Diodes Incorporated, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E2 | passive | Emitter of transistor 2 (PNP), with VEBO rating of -5V. |
| 2 | B2 | passive | Base of transistor 2 (PNP), with VEBO rating of -5V. |
| 3 | C1 | passive | Collector of transistor 1 (PNP), with VCEO of -40V and IC of -200mA maximum. |
| 4 | E1 | passive | Emitter of transistor 1 (PNP), with VEBO rating of -5V. |
| 5 | B1 | passive | Base of transistor 1 (PNP), with VEBO rating of -5V. |
| 6 | C2 | passive | Collector of transistor 2 (PNP), with VCEO of -40V and IC of -200mA maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC Current Gain (hFE), IC=-100µA, VCE=-1V | hFE | 60 | IC = -100µA, VCE = -1V | 4 | |||
| DC Current Gain (hFE), IC=-1.0mA, VCE=-1V | hFE | 80 | IC = -1.0mA, VCE = -1V | 4 | |||
| DC Current Gain (hFE), IC=-10mA, VCE=-1V | hFE | 100 | IC = -10mA, VCE = -1V | 4 | |||
| DC Current Gain (hFE), IC=-50mA, VCE=-1V | hFE | 60 | IC = -50mA, VCE = -1V | 4 | |||
| DC Current Gain (hFE), IC=-100mA, VCE=-1V | hFE | 30 | IC = -100mA, VCE = -1V | 4 | |||
| DC Current Gain (hFE) maximum | hFE | 300 | IC = -100µA to -100mA, VCE = -1V | 4 | |||
| Collector-Emitter Saturation Voltage | VCE(SAT) | -0.25 | V | IC = -10mA, IB = -1mA | 4 | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | -0.4 | V | IC = -50mA, IB = -5mA | 4 | ||
| Base-Emitter Saturation Voltage | VBE(SAT) | -0.65 | -0.85 | V | IC = -10mA, IB = -1mA | 4 | |
| Base-Emitter Saturation Voltage | VBE(SAT) | -0.95 | V | IC = -50mA, IB = -5mA | 4 | ||
| Collector-Base Breakdown Voltage | BVCBO | -40 | V | IC = -10µA, IE = 0 | 4 | ||
| Collector-Emitter Breakdown Voltage | BVCEO | -40 | V | IC = -1mA, IB = 0 | 4 | ||
| Emitter-Base Breakdown Voltage | BVEBO | -5 | V | IE = -10µA, IC = 0 | 4 | ||
| Collector Cut-Off Current | ICEX | -50 | nA | VCE = -30V, VEB(OFF) = -3.0V | 4 | ||
| Base Cut-Off Current | IBL | -50 | nA | VCE = -30V, VEB(OFF) = -3.0V | 4 | ||
| Output Capacitance | COBO | 4.5 | pF | VCB = -5.0V, f = 1.0MHz, IE = 0 | 4 | ||
| Input Capacitance | CIBO | 10 | pF | VEB = -0.5V, f = 1.0MHz, IC = 0 | 4 | ||
| Input Impedance | hie | 2 | 12 | kΩ | VCE = -10V, IC = -1.0mA, f = 1.0kHz | 4 | |
| Voltage Feedback Ratio | hre | 0.1 | 10 | x 10-4 | 4 | ||
| Small Signal Current Gain | hfe | 100 | 400 | 4 | |||
| Output Admittance | hoe | 3 | 60 | µS | 4 | ||
| Current Gain-Bandwidth Product | fT | 250 | MHz | VCE = -20V, IC = -10mA, f = 100MHz | 4 | ||
| Noise Figure | NF | 4 | dB | VCE = -5.0V, IC = -100µA, RS = 1.0kΩ, f = 1.0kHz | 4 | ||
| Delay Time | tD | 35 | ns | VCC = -3.0V, IC = -10mA, IB1 = IB2 = -1.0mA | 4 | ||
| Rise Time | tR | 35 | ns | 4 | |||
| Storage Time | tS | 200 | ns | 4 | |||
| Fall Time | tF | 50 | ns | 4 | |||
| Collector-Base Voltage | VCBO | -40 | V | 2 | |||
| Collector-Emitter Voltage | VCEO | -40 | V | 2 | |||
| Emitter-Base Voltage | VEBO | -5 | V | 2 | |||
| Collector Current | IC | -200 | mA | 2 | |||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Electrostatic Discharge - Human Body Model | ESD HBM | 4000 | V | JEDEC Class 3A | 2 | ||
| Electrostatic Discharge - Machine Model | ESD MM | 400 | V | JEDEC Class C | 2 | ||
| Power Dissipation | PD | 200 | mW | Note 5: minimum recommended pad layout FR-4 PCB, 1oz copper, still air, steady state | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 625 | °C/W | Note 5: minimum recommended pad layout FR-4 PCB, 1oz copper, still air, steady state | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | Terminals: Finish, Matte Tin Finish; Solderable per MIL-STD-202, Method 208 | 1 |
CAD (KiCad official)
- Symbol:
MMDT3906-7-F - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
mmdt3906-7-f-etched.step/mmdt3906-7-f-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmdt3906-7-f.step/mmdt3906-7-f.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (7 pp, sha256
e6381befcdc84af5, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).