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MMDT3904V KAP

Public Made by Adom

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CBI Bipolar (BJT), SOT-563. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMDT3904V KAP

CBI · Bipolar (BJT) · SOT-563

MMDT3904V KAP from CBI, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E1 passive Emitter of transistor 1 (NPN); drawing shows emitter arrow on pin 1.
2 B1 input Base of transistor 1; drive with IB per test conditions, VEBO max rating 5 V.
3 C2 passive Collector of transistor 2; VCEO 40 V, VCBO 60 V, IC continuous 0.2 A.
4 E2 passive Emitter of transistor 2 (NPN); drawing shows emitter arrow on pin 4.
5 B2 input Base of transistor 2; drive with IB per test conditions, VEBO max rating 5 V.
6 C1 passive Collector of transistor 1; VCEO 40 V, VCBO 60 V, IC continuous 0.2 A.

Key specifications

Parameter Value
Manufacturer CBI
Package SOT-563
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage V(BR)CBO V(BR)CBO 60 V IC=10A,IE=0 1
Collector-Emitter Breakdown Voltage V(BR)CEO V(BR)CEO 40 V IC=1mA,IB=0 1
Emitter-Base Breakdown Voltage V(BR)EBO V(BR)EBO 5 V IE=10A,IC=0 1
Collector Cut-off Current ICBO ICBO 0.05 A VCB=30V,IE=0 1
Emitter Cut-off Current IEBO IEBO 0.05 A VEB=5V,IC=0 1
DC Current Gain hFE(1) hFE(1) 40 VCE=1V,IC=0.1mA 1
DC Current Gain hFE(2) hFE(2) 70 VCE=1V,IC=1mA 1
DC Current Gain hFE(3) hFE(3) 100 300 VCE=1V,IC=10mA 1
DC Current Gain hFE(4) hFE(4) 60 VCE=1V,IC=50mA 1
DC Current Gain hFE(5) hFE(5) 30 VCE=1V,IC=100mA 1
Collector-Emitter Saturation Voltage VCE(sat)1 VCE(sat)1 0.2 V IC=10mA,IB=1mA 1
Collector-Emitter Saturation Voltage VCE(sat)2 VCE(sat)2 0.3 V IC=50mA,IB=5mA 1
Base-Emitter Saturation Voltage VBE(sat)1 VBE(sat)1 0.65 0.85 V IC=10mA,IB=1mA 1
Base-Emitter Saturation Voltage VBE(sat)2 VBE(sat)2 0.95 V IC=50mA,IB=5mA 1
Transition Frequency fT fT 300 MHz VCE=20V,IC=10mA,f=100MHz 1
Collector-Base Voltage 60 V 1
Collector-Emitter Voltage 40 V 1
Emitter-Base Voltage 5 V 1
Collector Current - Continuous 0.2 A 1
Collector Power Dissipation 0.2 W 1
Operation Junction and Storage Temperature Range TJ -55 150 °C 1
Delay Time td td 35 ns VCC=3V, VBE(off)=-0.5V, IC=10mA, IB1=-IB2=1mA 1
Rise Time tr tr 35 ns VCC=3V, VBE(off)=-0.5V, IC=10mA, IB1=-IB2=1mA 1
Storage Time ts ts 200 ns VCC=3V, IC=10mA, IB1=-IB2=1mA 1
Fall Time tf tf 50 ns VCC=3V, IC=10mA, IB1=-IB2=1mA 1

CAD (KiCad official)

  • Symbol: MMDT3904V KAP
  • Footprint: Package_TO_SOT_SMD:SOT-563
  • 3D model: SOT-563 (KiCad packages3D, STEP)
  • 3D model files: mmdt3904v-kap-etched.step / mmdt3904v-kap-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmdt3904v-kap.step / mmdt3904v-kap.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: CBI datasheet (3 pp, sha256 80a06272028db4d5, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF