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MMDT3904SG

Public Made by Adom

by adom

PJSEMI Bipolar (BJT), SOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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MMDT3904SG

PJSEMI · Bipolar (BJT) · SOT-23-6

MMDT3904SG from PJSEMI, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B1 passive Base terminal of the first NPN transistor in the double-NPN package; the datasheet gives only the pin assignment and no pin-specific limits.
2 E2 passive Emitter terminal of the second NPN transistor in the double-NPN package; the datasheet gives only the pin assignment and no pin-specific limits.
3 B2 passive Base terminal of the second NPN transistor in the double-NPN package; the datasheet gives only the pin assignment and no pin-specific limits.
4 C2 passive Collector terminal of the second NPN transistor in the double-NPN package; the datasheet gives only the pin assignment and no pin-specific limits.
5 E1 passive Emitter terminal of the first NPN transistor in the double-NPN package; the datasheet gives only the pin assignment and no pin-specific limits.
6 C1 passive Collector terminal of the first NPN transistor in the double-NPN package; the datasheet gives only the pin assignment and no pin-specific limits.

Key specifications

Parameter Value
Manufacturer PJSEMI
Package SOT-23-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector Emitter Saturation Voltage VCE(sat) 0.2 V at IC = 10 mA, IB = 1 mA 2
Collector Emitter Saturation Voltage VCE(sat) 0.3 V at IC = 50 mA, IB = 5 mA 2
Base Emitter Saturation Voltage VBE(sat) 0.65 0.85 V at IC = 10 mA, IB = 1 mA 2
Base Emitter Saturation Voltage VBE(sat) 0.95 V at IC = 50 mA, IB = 5 mA 2
DC Current Gain HFE 40 at VCE = 1 V, IC = 0.1 mA 2
DC Current Gain HFE 70 at VCE = 1 V, IC = 1 mA 2
DC Current Gain HFE 100 300 at VCE = 1 V, IC = 10 mA 2
DC Current Gain HFE 60 at VCE = 1 V, IC = 50 mA 2
DC Current Gain HFE 30 at VCE = 1 V, IC = 100 mA 2
Collector Base Cutoff Current ICBO 50 nA at VCB = 30V 2
Emitter Base Cutoff Current IEBO 50 nA at VEB = 6 V 2
Collector Base Breakdown Voltage V(BR)CBO 60 V at IC = 10 μA 2
Collector Emitter Breakdown Voltage V(BR)CEO 40 V at IC = 1 mA 2
Emitter Base Breakdown Voltage V(BR)EBO 6 V at IE = 10 μA 2
Transition Frequency FT 300 MHz at VCE = 20 V, IC = 10 mA, f = 100 MHz 2
Output Capacitance Cob 4 pF at VCB = 5 V, IE = 0, f = 1 MHz 2
Collector Base Voltage VCBO 60 V 1
Collector Emitter Voltage VCEO 40 V 1
Emitter Base Voltage VEBO 6 V 1
Collector Current IC 200 mA 1
Maximum Power Dissipation PD 1 W 1
Junction Temperature TJ 150 ℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1

CAD (KiCad official)

  • Symbol: MMDT3904SG
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6 (KiCad packages3D, STEP)
  • 3D model files: mmdt3904sg-etched.step / mmdt3904sg-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmdt3904sg.step / mmdt3904sg.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PJSEMI datasheet (6 pp, sha256 870fa415ee4bd753, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF