main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 1d ago
viewers mmdt3904q-7-f: viewers · Ray 1d ago
mmdt3904q-7-f-etched.glb Publish 0.1.0 · Ray 1d ago
mmdt3904q-7-f-etched.step mmdt3904q-7-f: factory component page (tier=mfr) · Ray 1d ago
mmdt3904q-7-f-hero.glb mmdt3904q-7-f: hero GLB from the etched model (keeps the MPN mark) · Ray 1d ago
mmdt3904q-7-f-hero.overlay.json Publish 0.1.0 · Ray 1d ago
mmdt3904q-7-f.glb Publish 0.1.0 · Ray 1d ago
mmdt3904q-7-f.kicad_mod Publish 0.1.0 · Ray 1d ago
mmdt3904q-7-f.kicad_sym Publish 0.1.0 · Ray 1d ago
mmdt3904q-7-f.lbr Publish 0.1.0 · Ray 1d ago
mmdt3904q-7-f.step Publish 0.1.0 · Ray 1d ago
package.json Publish 0.1.0 · Ray 1d ago
page.json Set visibility: public · Ray 1d ago
README.md Publish 0.1.0 · Ray 1d ago
verification.json Verified: Published by the parts factory: tier mfr, 6 pins · Ray 1d ago

MMDT3904Q-7-F

Diodes Incorporated · Bipolar Transistors - BJT · SOT-363

MMDT3904Q-7-F from Diodes Incorporated, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E2 passive Emitter of transistor 2 (NPN); the datasheet gives VEBO of 6.0 V maximum and IC of 200 mA maximum for the transistor.
2 B2 passive Base of transistor 2 (NPN); the datasheet gives VEBO of 6.0 V maximum and VCBO of 60 V maximum.
3 C1 passive Collector of transistor 1 (NPN); the datasheet gives VCEO of 40 V, VCBO of 60 V and IC of 200 mA maximum.
4 E1 passive Emitter of transistor 1 (NPN); the datasheet gives VEBO of 6.0 V maximum and IC of 200 mA maximum for the transistor.
5 B1 passive Base of transistor 1 (NPN); the datasheet gives VEBO of 6.0 V maximum and VCBO of 60 V maximum.
6 C2 passive Collector of transistor 2 (NPN); the datasheet gives VCEO of 40 V, VCBO of 60 V and IC of 200 mA maximum.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 60 V 2
Collector-Emitter Voltage VCEO 40 V 2
Emitter-Base Voltage VEBO 6 V 2
Collector Current IC 200 mA 2
Power Dissipation PD 200 mW Note 6 (FR-4 minimum recommended pad layout, still air) 2
Thermal Resistance, Junction to Ambient RθJA 625 °C/W Note 6 (FR-4 minimum recommended pad layout, still air) 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Electrostatic Discharge - Human Body Model ESD HBM 4000 V JEDEC Class 3A 2
Electrostatic Discharge - Machine Model ESD MM 400 V JEDEC Class C 2
Collector-Base Breakdown Voltage BVCBO 60 V IC = 100µA, IE = 0 3
Collector-Emitter Breakdown Voltage BVCEO 40 V IC = 10.0mA, IB = 0 3
Emitter-Base Breakdown Voltage BVEBO 6 V IE = 100µA, IC = 0 3
Collector-Base Cut-Off Current ICBO 50 nA VCB = 50V 3
Collector-Emitter Cut-Off Current ICEV 50 nA VCE = 40V, VBE(OFF) = 3.0V 3
Emitter-Base Cut-Off Current IEBO 50 nA VEB = 5V 3
DC Current Gain hFE 40 IC = 100µA, VCE = 1.0V 3
DC Current Gain hFE 70 IC = 1.0mA, VCE = 1.0V 3
DC Current Gain hFE 100 IC = 10mA, VCE = 1.0V 3
DC Current Gain hFE 60 IC = 50mA, VCE = 1.0V 3
DC Current Gain hFE 30 IC = 100mA, VCE = 1.0V 3
DC Current Gain hFE 300 3
Collector-Emitter Saturation Voltage VCE(SAT) 0.2 V IC = 10mA, IB = 1.0mA 3
Collector-Emitter Saturation Voltage VCE(SAT) 0.3 V IC = 50mA, IB = 5.0mA 3
Base-Emitter Saturation Voltage VBE(SAT) 0.65 0.85 V IC = 10mA, IB = 1.0mA 3
Base-Emitter Saturation Voltage VBE(SAT) 0.95 V IC = 50mA, IB = 5.0mA 3
Output Capacitance Cobo 4 pF VCB = 5.0V, f = 1.0MHz, IE = 0 3
Input Capacitance Cibo 8 pF VEB = 0.5V, f = 1.0MHz, IC = 0 3
Input Impedance hie 1 10 kΩ VCE = 10V, IC = 1.0mA, f = 1.0kHz 3
Voltage Feedback Ratio hre 0.5 8 x 10-4 VCE = 10V, IC = 1.0mA, f = 1.0kHz 3
Small Signal Current Gain hfe 100 400 3
Output Admittance hoe 1 40 µs 3
Current Gain-Bandwidth Product fT 300 MHz VCE = 20V, IC = 10mA, f = 100MHz 3
Noise Figure NF 5 dB VCE = 5.0V, IC = 100μA, RS = 1.0kΩ, f = 1.0kHz 3
Delay Time tD 35 ns VCC = 3.0V, IC = 10mA, VBE(OFF) = -0.5V, IB1 = 1.0mA 3
Rise Time tR 35 ns VCC = 3.0V, IC = 10mA, VBE(OFF) = -0.5V, IB1 = 1.0mA 3
Storage Time tS 200 ns VCC = 3.0V, IC = 10mA 3
Fall Time tF 50 ns IB1 = -IB2 = 1.0mA 3

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin  Terminals: Finish, Matte Tin Finish; Solderable per MIL-STD￾202, Method 208  Weight: 0.006 grams (Approximate) 1

CAD (KiCad official)

  • Symbol: MMDT3904Q-7-F
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: mmdt3904q-7-f-etched.step / mmdt3904q-7-f-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmdt3904q-7-f.step / mmdt3904q-7-f.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (6 pp, sha256 b5b33ef7e2ac190e, retrieved 2026-11-05, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF