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MMDT3904

TWGMC · Bipolar (BJT) · SOT-363

MMDT3904 from TWGMC, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E1 passive Emitter of transistor 1 (NPN) in the dual MMDT3904; VEBO max 5 V.
2 B1 passive Base of transistor 1 (NPN); VCBO 60 V, VEBO 5 V maximum.
3 C2 passive Collector of transistor 2 (NPN); VCEO 40 V and IC 0.2 A continuous maximum.
4 E2 passive Emitter of transistor 2 (NPN); VEBO max 5 V.
5 B2 passive Base of transistor 2 (NPN); VCBO 60 V, VEBO 5 V maximum.
6 C1 passive Collector of transistor 1 (NPN); VCEO 40 V and IC 0.2 A continuous maximum.

Key specifications

Parameter Value
Manufacturer TWGMC
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO 60 V IC=10μA,IE=0 1
Collector-emitter breakdown voltage V(BR)CEO 40 V IC=1mA,IB=0 1
Emitter-base breakdown voltage V(BR)EBO 5 V IE=10μA,IC=0 1
Collector cut-off current ICBO 0.05 μA VCB=30V,IE=0 1
Emitter cut-off current IEBO 0.05 μA VEB=5V,IC=0 1
DC current gain hFE(1) 40 VCE=1V,IC=0.1mA 1
DC current gain hFE(2) 70 VCE=1V,IC=1mA 1
DC current gain hFE(3) 100 300 VCE=1V,IC=10mA 1
DC current gain hFE(4) 60 VCE=1V,IC=50mA 1
DC current gain hFE(5) 30 VCE=1V,IC=100mA 1
Collector-emitter saturation voltage VCE(sat)1 0.2 V IC=10mA,IB=1mA 1
Collector-emitter saturation voltage VCE(sat)2 0.3 V IC=50mA,IB=5mA 1
Base-emitter saturation voltage VBE(sat)1 0.65 0.85 V IC=10mA,IB=1mA 1
Base-emitter saturation voltage VBE(sat)2 0.95 V IC=50mA,IB=5mA 1
Transition frequency fT 300 MHz VCE=20V,IC=10mA,f=100MHz 1
Collector output capacitance Cob 4 pF VCB=5V,IE=0,f=1MHz 1
Noise figure NF 5 dB VCE=5V,Ic=0.1mA,f=1kHz,RS=1KΩ 1
Delay time td 35 ns 1
Rise time tr 35 ns VCC=3V, VBE(off)=-0.5V; IC=10mA, IB1=-IB2=1mA 1
Storage time ts 200 ns 1
Fall time tf 50 ns VCC=3V, IC=10mA; IB1=-IB2=1mA 1
Collector cut-off current (ICEX) ICEX 0.05 μA VCE=30V,VBE(off)=3V 1
Collector-base voltage VCBO 60 V 1
Collector-emitter voltage VCEO 40 V 1
Emitter-base voltage VEBO 5 V 1
Collector current - continuous IC 0.2 A 1
Collector power dissipation PC 0.2 W 1
Junction temperature TJ 150 ℃ 1
Storage temperature Tstg -55 150 ℃ 1

CAD (KiCad official)

  • Symbol: MMDT3904
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: mmdt3904-etched.step / mmdt3904-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmdt3904.step / mmdt3904.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TWGMC datasheet (5 pp, sha256 44aacef55812170a, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF