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MMDT2907ASG

Public Made by Adom

by adom

PJSEMI Bipolar (BJT), SOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Symbol & Footprint

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Datasheet

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Contents

README

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MMDT2907ASG

PJSEMI · Bipolar (BJT) · SOT-23-6

MMDT2907ASG from PJSEMI, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B1 input Base of PNP transistor 1 (datasheet pin list, page 1); device ratings are -VCEO 60 V, -VEBO 5 V and -IC 600 mA maximum.
2 E2 passive Emitter of PNP transistor 2; device absolute maximum ratings are -VCBO 60 V, -VCEO 60 V, -VEBO 5 V and -IC 600 mA.
3 B2 input Base of PNP transistor 2 (datasheet pin list, page 1); device ratings are -VCEO 60 V, -VEBO 5 V and -IC 600 mA maximum.
4 C2 passive Collector of PNP transistor 2; device absolute maximum ratings are -VCBO 60 V, -VCEO 60 V, -VEBO 5 V and -IC 600 mA.
5 E1 passive Emitter of PNP transistor 1; device absolute maximum ratings are -VCBO 60 V, -VCEO 60 V, -VEBO 5 V and -IC 600 mA.
6 C1 passive Collector of PNP transistor 1; device absolute maximum ratings are -VCBO 60 V, -VCEO 60 V, -VEBO 5 V and -IC 600 mA.

Key specifications

Parameter Value
Manufacturer PJSEMI
Package SOT-23-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
DC Current Gain HFE 75 at VCE = -10 V, IC = -0.1 mA 2
DC Current Gain HFE 100 at VCE = -10 V, IC = -1 mA 2
DC Current Gain HFE 100 300 at VCE = -10 V, IC = -150 mA 2
DC Current Gain HFE 50 at VCE = -10 V, IC = -500 mA 2
Collector Base Cutoff Current -ICBO 10 nA at VCB = -50 V 2
Collector Base Breakdown Voltage -V(BR)CBO 60 V at IC = -10 μA 2
Collector Emitter Breakdown Voltage -V(BR)CEO 60 V at IC = -10 mA 2
Emitter Base Breakdown Voltage -V(BR)EBO 5 V at IE = -10 μA 2
Collector Emitter Saturation Voltage -VCE(sat) 0.4 V at IC = -150 mA, IB = -15 mA 2
Collector Emitter Saturation Voltage -VCE(sat) 1.6 V at IC = -500 mA, IB = -50 mA 2
Base Emitter Saturation Voltage -VBE(sat) 1.3 V at IC = -150 mA, IB = -15 mA 2
Base Emitter Saturation Voltage -VBE(sat) 2.6 V at IC = -500 mA, IB = -50 mA 2
Transition Frequency FT 200 MHz at VCE = -20 V, IC = -50 mA, f = 100 MHz 2
Output Capacitance Cob 8 pF at VCB = -10 V, f = 1 MHz 2
Collector Base Voltage -VCBO 60 V Ratings at 25℃ ambient temperature unless otherwise specified 1
Collector Emitter Voltage -VCEO 60 V Ratings at 25℃ ambient temperature unless otherwise specified 1
Emitter Base Voltage -VEBO 5 V Ratings at 25℃ ambient temperature unless otherwise specified 1
Collector Current -IC 600 mA Ratings at 25℃ ambient temperature unless otherwise specified 1
Maximum Power Dissipation PD 1 W Ratings at 25℃ ambient temperature unless otherwise specified 1
Junction Temperature TJ 150 ℃ Ratings at 25℃ ambient temperature unless otherwise specified 1
Storage Temperature Range TSTG -55 150 ℃ Ratings at 25℃ ambient temperature unless otherwise specified 1

CAD (KiCad official)

  • Symbol: MMDT2907ASG
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6 (KiCad packages3D, STEP)
  • 3D model files: mmdt2907asg-etched.step / mmdt2907asg-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmdt2907asg.step / mmdt2907asg.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PJSEMI datasheet (6 pp, sha256 a94aa39337ac1a32, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF