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MMDT2907A-7-F
Public Made by Adomby adom
Diodes Incorporated Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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mmdt2907a-7-f: specified limits as data (metadata.characteristics, 33 rows from the datasheet)
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17d ago
MMDT2907A-7-F
Diodes Incorporated · Bipolar (BJT) · SOT-363
MMDT2907A-7-F from Diodes Incorporated, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E1 | passive | Emitter of PNP transistor 1; VEBO rating is -5.0 V. |
| 2 | B1 | passive | Base of PNP transistor 1; VEBO rating is -5.0 V. |
| 3 | C2 | passive | Collector of PNP transistor 2; VCEO -60 V and IC -600 mA maximum. |
| 4 | E2 | passive | Emitter of PNP transistor 2; VEBO rating is -5.0 V. |
| 5 | B2 | passive | Base of PNP transistor 2; VEBO rating is -5.0 V. |
| 6 | C1 | passive | Collector of PNP transistor 1; VCEO -60 V and IC -600 mA maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | -60 | V | 2 | |||
| Collector-Emitter Voltage | VCEO | -60 | V | 2 | |||
| Emitter-Base Voltage | VEBO | -5 | V | 2 | |||
| Collector Current | IC | -600 | mA | 2 | |||
| Power Dissipation | PD | 200 | mW | Note 6: minimum recommended pad layout FR-4 PCB, high coverage single-sided 1oz copper, still air, steady state | 2 | ||
| Thermal Resistance, Junction to Ambient Air | RθJA | 625 | C/W | Note 6: minimum recommended pad layout FR-4 PCB, still air | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | C | 2 | ||
| Electrostatic Discharge - Human Body Model | ESD HBM | 4000 | V | JEDEC Class 3A, JESD22-A114 | 2 | ||
| Electrostatic Discharge - Machine Model | ESD MM | 400 | V | JEDEC Class C, JESD22-A115 | 2 | ||
| Collector-Base Breakdown Voltage | BVCBO | -60 | V | IC = -10µA, IB = 0 | 3 | ||
| Collector-Emitter Breakdown Voltage | BVCEO | -60 | V | IC = -10mA, IB = 0 | 3 | ||
| Emitter-Base Breakdown Voltage | BVEBO | -5 | V | IE = -10µA, IC = 0 | 3 | ||
| Collector Cutoff Current | ICBO | -10 | nA | VCB = -50V, IE = 0 | 3 | ||
| Collector Cutoff Current | ICBO | -10 | µA | VCB = -50V, IE = 0, TA = +125°C | 3 | ||
| Collector Cutoff Current | ICEX | -50 | nA | VCE = -30V, VEB(OFF) = -0.5V | 3 | ||
| Base Cutoff Current | IBL | -50 | nA | VCE = -30V, VEB(OFF) = -0.5V | 3 | ||
| DC Current Gain | hFE | 75 | IC = -100µA, VCE = -10V | 3 | |||
| DC Current Gain | hFE | 100 | IC = -1.0mA, VCE = -10V | 3 | |||
| DC Current Gain | hFE | 100 | 300 | IC = -150mA, VCE = -10V | 3 | ||
| DC Current Gain | hFE | 50 | IC = -500mA, VCE = -10V | 3 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.4 | V | IC = -150mA, IB = -15mA | 3 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | -1.6 | V | IC = -500mA, IB = -50mA | 3 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | -1.3 | V | IC = -150mA, IB = -15mA | 3 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | -2.6 | V | IC = -500mA, IB = -50mA | 3 | ||
| Output Capacitance | COBO | 8 | pF | VCB = -10V, f = 1.0MHz, IE = 0 | 3 | ||
| Input Capacitance | CIBO | 30 | pF | VEB = -2.0V, f = 1.0MHz, IC = 0 | 3 | ||
| Current Gain Bandwidth Product | fT | 200 | MHz | VCE = -20V, IC = -50mA, f = 100MHz | 3 | ||
| Turn-On Time | ton | 45 | ns | VCC = -30V, IC = -150mA, IB1 = -15mA | 3 | ||
| Delay Time | td | 10 | ns | VCC = -30V, IC = -150mA, IB1 = -15mA | 3 | ||
| Rise Time | tr | 40 | ns | VCC = -30V, IC = -150mA, IB1 = -15mA | 3 | ||
| Turn-Off Time | toff | 100 | ns | VCC = -6V, IC = -150mA, IB1 = -IB2 = -15mA | 3 | ||
| Storage Time | ts | 80 | ns | VCC = -6V, IC = -150mA, IB1 = -IB2 = -15mA | 3 | ||
| Fall Time | tf | 30 | ns | VCC = -6V, IC = -150mA, IB1 = -IB2 = -15mA | 3 |
CAD (KiCad official)
- Symbol:
MMDT2907A-7-F - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
mmdt2907a-7-f-etched.step/mmdt2907a-7-f-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmdt2907a-7-f.step/mmdt2907a-7-f.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (6 pp, sha256
7888d87304a417f0, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MMDT2907A-7-F
**Diodes Incorporated** · Bipolar (BJT) · SOT-363
MMDT2907A-7-F from Diodes Incorporated, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E1 | passive | Emitter of PNP transistor 1; VEBO rating is -5.0 V. |
| 2 | B1 | passive | Base of PNP transistor 1; VEBO rating is -5.0 V. |
| 3 | C2 | passive | Collector of PNP transistor 2; VCEO -60 V and IC -600 mA maximum. |
| 4 | E2 | passive | Emitter of PNP transistor 2; VEBO rating is -5.0 V. |
| 5 | B2 | passive | Base of PNP transistor 2; VEBO rating is -5.0 V. |
| 6 | C1 | passive | Collector of PNP transistor 1; VCEO -60 V and IC -600 mA maximum. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | -60 | | | V | | 2 |
| Collector-Emitter Voltage | VCEO | -60 | | | V | | 2 |
| Emitter-Base Voltage | VEBO | -5 | | | V | | 2 |
| Collector Current | IC | -600 | | | mA | | 2 |
| Power Dissipation | PD | | | 200 | mW | Note 6: minimum recommended pad layout FR-4 PCB, high coverage single-sided 1oz copper, still air, steady state | 2 |
| Thermal Resistance, Junction to Ambient Air | RθJA | | | 625 | C/W | Note 6: minimum recommended pad layout FR-4 PCB, still air | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 150 | C | | 2 |
| Electrostatic Discharge - Human Body Model | ESD HBM | | | 4000 | V | JEDEC Class 3A, JESD22-A114 | 2 |
| Electrostatic Discharge - Machine Model | ESD MM | | | 400 | V | JEDEC Class C, JESD22-A115 | 2 |
| Collector-Base Breakdown Voltage | BVCBO | -60 | | | V | IC = -10µA, IB = 0 | 3 |
| Collector-Emitter Breakdown Voltage | BVCEO | -60 | | | V | IC = -10mA, IB = 0 | 3 |
| Emitter-Base Breakdown Voltage | BVEBO | -5 | | | V | IE = -10µA, IC = 0 | 3 |
| Collector Cutoff Current | ICBO | | | -10 | nA | VCB = -50V, IE = 0 | 3 |
| Collector Cutoff Current | ICBO | | | -10 | µA | VCB = -50V, IE = 0, TA = +125°C | 3 |
| Collector Cutoff Current | ICEX | | | -50 | nA | VCE = -30V, VEB(OFF) = -0.5V | 3 |
| Base Cutoff Current | IBL | | | -50 | nA | VCE = -30V, VEB(OFF) = -0.5V | 3 |
| DC Current Gain | hFE | 75 | | | | IC = -100µA, VCE = -10V | 3 |
| DC Current Gain | hFE | 100 | | | | IC = -1.0mA, VCE = -10V | 3 |
| DC Current Gain | hFE | 100 | | 300 | | IC = -150mA, VCE = -10V | 3 |
| DC Current Gain | hFE | 50 | | | | IC = -500mA, VCE = -10V | 3 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | | -0.4 | V | IC = -150mA, IB = -15mA | 3 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | | -1.6 | V | IC = -500mA, IB = -50mA | 3 |
| Base-Emitter Saturation Voltage | VBE(sat) | | | -1.3 | V | IC = -150mA, IB = -15mA | 3 |
| Base-Emitter Saturation Voltage | VBE(sat) | | | -2.6 | V | IC = -500mA, IB = -50mA | 3 |
| Output Capacitance | COBO | | | 8 | pF | VCB = -10V, f = 1.0MHz, IE = 0 | 3 |
| Input Capacitance | CIBO | | | 30 | pF | VEB = -2.0V, f = 1.0MHz, IC = 0 | 3 |
| Current Gain Bandwidth Product | fT | 200 | | | MHz | VCE = -20V, IC = -50mA, f = 100MHz | 3 |
| Turn-On Time | ton | | | 45 | ns | VCC = -30V, IC = -150mA, IB1 = -15mA | 3 |
| Delay Time | td | | | 10 | ns | VCC = -30V, IC = -150mA, IB1 = -15mA | 3 |
| Rise Time | tr | | | 40 | ns | VCC = -30V, IC = -150mA, IB1 = -15mA | 3 |
| Turn-Off Time | toff | | | 100 | ns | VCC = -6V, IC = -150mA, IB1 = -IB2 = -15mA | 3 |
| Storage Time | ts | | | 80 | ns | VCC = -6V, IC = -150mA, IB1 = -IB2 = -15mA | 3 |
| Fall Time | tf | | | 30 | ns | VCC = -6V, IC = -150mA, IB1 = -IB2 = -15mA | 3 |
## CAD (KiCad official)
- Symbol: `MMDT2907A-7-F`
- Footprint: `Package_TO_SOT_SMD:SOT-363_SC-70-6`
- 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files: `mmdt2907a-7-f-etched.step` / `mmdt2907a-7-f-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mmdt2907a-7-f.step` / `mmdt2907a-7-f.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Diodes Incorporated datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588911581611118592) (6 pp, sha256 `7888d87304a417f0`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/mmdt2907a-7-f-datasheet.pdf)