component
MMDT2227M-7
Public Made by Adomby adom
Diodes Incorporated Bipolar (BJT), SOT-26. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
MMDT2227M-7
Diodes Incorporated · Bipolar (BJT) · SOT-26
MMDT2227M-7 from Diodes Incorporated, in a SOT-26. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E2 | passive | Emitter of the 2222A-type NPN transistor (Q2); NPN ratings are VCBO 75 V, VCEO 40 V, VEBO 6.0 V, IC 600 mA continuous. |
| 2 | B2 | passive | Base of the 2222A-type NPN transistor (Q2); VEBO maximum is 6.0 V. |
| 3 | C1 | passive | Collector of the 2907A-type PNP transistor (Q1); PNP ratings are VCBO -60 V, VCEO -60 V, IC -600 mA continuous. |
| 4 | E1 | passive | Emitter of the 2907A-type PNP transistor (Q1); VEBO maximum is -5.0 V. |
| 5 | B1 | passive | Base of the 2907A-type PNP transistor (Q1); VEBO maximum is -5.0 V. |
| 6 | C2 | passive | Collector of the 2222A-type NPN transistor (Q2); VCBO 75 V, VCEO 40 V, IC 600 mA continuous. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-26 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage (2222A NPN) | V(BR)CBO | 75 | V | IC = 10 A, IE = 0 | 2 | ||
| Collector-Emitter Breakdown Voltage (2222A NPN) | V(BR)CEO | 40 | V | IC = 10mA, IB = 0 | 2 | ||
| Emitter-Base Breakdown Voltage (2222A NPN) | V(BR)EBO | 6 | V | IE = 10 A, IC = 0 | 2 | ||
| Collector Cutoff Current (2222A NPN) | ICBO | 10 | nA | VCB = 60V, IE = 0 | 2 | ||
| Emitter Cutoff Current (2222A NPN) | IEBO | 10 | nA | VEB = 3.0V, IC = 0 | 2 | ||
| Base Cutoff Current (2222A NPN) | IBL | 20 | nA | VCE = 60V, VEB(OFF) = 3.0V | 2 | ||
| DC Current Gain (2222A NPN) | hFE | 35 | IC = 100 A, VCE = 10V | 2 | |||
| DC Current Gain (2222A NPN) | hFE | 50 | IC = 1.0mA, VCE = 10V | 2 | |||
| DC Current Gain (2222A NPN) | hFE | 75 | IC = 10mA, VCE = 10V | 2 | |||
| DC Current Gain (2222A NPN) | hFE | 100 | IC = 150mA, VCE = 10V | 2 | |||
| DC Current Gain (2222A NPN) | hFE | 40 | IC = 500mA, VCE = 10V | 2 | |||
| Collector-Emitter Saturation Voltage (2222A NPN) | VCE(SAT) | 0.3 | V | IC = 150mA, IB = 15mA | 2 | ||
| Collector-Emitter Saturation Voltage (2222A NPN) | VCE(SAT) | 1 | V | IC = 500mA, IB = 50mA | 2 | ||
| Base-Emitter Saturation Voltage (2222A NPN) | VBE(SAT) | 0.6 | 1.2 | V | IC = 150mA, IB = 15mA | 2 | |
| Base-Emitter Saturation Voltage (2222A NPN) | VBE(SAT) | 2 | V | IC = 500mA, IB = 50mA | 2 | ||
| Output Capacitance (2222A NPN) | Cobo | 8 | pF | VCB = 10V, f = 1.0MHz, IE = 0 | 2 | ||
| Input Capacitance (2222A NPN) | Cibo | 25 | pF | VEB = 0.5V, f = 1.0MHz, IC = 0 | 2 | ||
| Current Gain-Bandwidth Product (2222A NPN) | fT | 300 | MHz | VCE = 20V, IC = 20mA, f = 100MHz | 2 | ||
| Delay Time (2222A NPN) | td | 10 | ns | VCC = 30V, IC = 150mA, VBE(off) = - 0.5V, IB1 = 15mA | 2 | ||
| Rise Time (2222A NPN) | tr | 25 | ns | VCC = 30V, IC = 150mA, VBE(off) = - 0.5V, IB1 = 15mA | 2 | ||
| Storage Time (2222A NPN) | ts | 225 | ns | VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA | 2 | ||
| Fall Time (2222A NPN) | tf | 60 | ns | VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA | 2 | ||
| Collector-Base Breakdown Voltage (2907A PNP) | V(BR)CBO | -60 | V | IC = -10 A, IE = 0 | 3 | ||
| Collector-Emitter Breakdown Voltage (2907A PNP) | V(BR)CEO | -60 | V | IC = -10mA, IB = 0 | 3 | ||
| Emitter-Base Breakdown Voltage (2907A PNP) | V(BR)EBO | -5 | V | IE = -10 A, IC = 0 | 3 | ||
| Collector Cutoff Current (2907A PNP) | ICBO | -10 | nA | VCB = -50V, IE = 0 | 3 | ||
| Collector Cutoff Current (2907A PNP) | ICEX | -50 | nA | VCE = -30V, VEB(OFF) = -0.5V | 3 | ||
| Base Cutoff Current (2907A PNP) | IBL | -50 | nA | VCE = -30V, VEB(OFF) = -0.5V | 3 | ||
| DC Current Gain (2907A PNP) | hFE | 75 | IC = -100µA, VCE = -10V | 3 | |||
| DC Current Gain (2907A PNP) | hFE | 100 | IC = -1.0mA, VCE = -10V | 3 | |||
| DC Current Gain (2907A PNP) | hFE | 50 | IC = -500mA, VCE = -10V | 3 | |||
| Collector-Emitter Saturation Voltage (2907A PNP) | VCE(SAT) | -0.4 | V | IC = -150mA, IB = -15mA | 3 | ||
| Collector-Emitter Saturation Voltage (2907A PNP) | VCE(SAT) | -1.6 | V | IC = -500mA, IB = -50mA | 3 | ||
| Base-Emitter Saturation Voltage (2907A PNP) | VBE(SAT) | -1.3 | V | IC = 150mA, IB = 15mA | 3 | ||
| Base-Emitter Saturation Voltage (2907A PNP) | VBE(SAT) | -2.6 | V | IC = 500mA, IB = 50mA | 3 | ||
| Output Capacitance (2907A PNP) | Cobo | 8 | pF | VCB = -10V, f = 1.0MHz, IE = 0 | 3 | ||
| Input Capacitance (2907A PNP) | Cibo | 30 | pF | VEB = -2.0V, f = 1.0MHz, IC = 0 | 3 | ||
| Current Gain-Bandwidth Product (2907A PNP) | fT | 200 | MHz | VCE = -20V, IC = -50mA, f = 100MHz | 3 | ||
| Turn-On Time (2907A PNP) | ton | 45 | ns | VCC = -30V, IC = -150mA, IB1 = -15mA | 3 | ||
| Delay Time (2907A PNP) | td | 10 | ns | VCC = -30V, IC = -150mA, IB1 = -15mA | 3 | ||
| Rise Time (2907A PNP) | tr | 40 | ns | VCC = -30V, IC = -150mA, IB1 = -15mA | 3 | ||
| Turn-Off Time (2907A PNP) | toff | 100 | ns | VCC = -6.0V, IC = -150mA, IB1 = IB2 = -15mA | 3 | ||
| Storage Time (2907A PNP) | ts | 80 | ns | VCC = -6.0V, IC = -150mA, IB1 = IB2 = -15mA | 3 | ||
| Fall Time (2907A PNP) | tf | 30 | ns | VCC = -6.0V, IC = -150mA, IB1 = IB2 = -15mA | 3 | ||
| Collector-Emitter Voltage, 2222A NPN (Maximum Ratings) | VCEO | 40 | V | 1 | |||
| Collector-Base Voltage, 2222A NPN (Maximum Ratings) | VCBO | 75 | V | 1 | |||
| Emitter-Base Voltage, 2222A NPN (Maximum Ratings) | VEBO | 6 | V | 1 | |||
| Collector Current - Continuous, 2222A NPN (Maximum Ratings) | IC | 600 | mA | 1 | |||
| Collector-Base Voltage, 2907A PNP (Maximum Ratings) | VCBO | -60 | V | 1 | |||
| Collector-Emitter Voltage, 2907A PNP (Maximum Ratings) | VCEO | -60 | V | 1 | |||
| Emitter-Base Voltage, 2907A PNP (Maximum Ratings) | VEBO | -5 | V | 1 | |||
| Collector Current - Continuous, 2907A PNP (Maximum Ratings) | IC | -600 | mA | 1 | |||
| Total Power Dissipation | Pd | 300 | mW | Note 1: device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch | 1 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 417 | C/W | Note 1: device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch | 1 | ||
| Operating and Storage Temperature Range | Tj, TSTG | -55 | 150 | C | 1 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | Terminals: Finish - Matte Tin annealed over Copper | 1 |
CAD (KiCad official)
- Symbol:
MMDT2227M-7 - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-26 (KiCad packages3D, STEP)
- 3D model files:
mmdt2227m-7-etched.step/mmdt2227m-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmdt2227m-7.step/mmdt2227m-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (4 pp, sha256
9e5eecd842c283e8, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MMDT2227M-7
**Diodes Incorporated** · Bipolar (BJT) · SOT-26
MMDT2227M-7 from Diodes Incorporated, in a SOT-26. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E2 | passive | Emitter of the 2222A-type NPN transistor (Q2); NPN ratings are VCBO 75 V, VCEO 40 V, VEBO 6.0 V, IC 600 mA continuous. |
| 2 | B2 | passive | Base of the 2222A-type NPN transistor (Q2); VEBO maximum is 6.0 V. |
| 3 | C1 | passive | Collector of the 2907A-type PNP transistor (Q1); PNP ratings are VCBO -60 V, VCEO -60 V, IC -600 mA continuous. |
| 4 | E1 | passive | Emitter of the 2907A-type PNP transistor (Q1); VEBO maximum is -5.0 V. |
| 5 | B1 | passive | Base of the 2907A-type PNP transistor (Q1); VEBO maximum is -5.0 V. |
| 6 | C2 | passive | Collector of the 2222A-type NPN transistor (Q2); VCBO 75 V, VCEO 40 V, IC 600 mA continuous. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-26 |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage (2222A NPN) | V(BR)CBO | 75 | | | V | IC = 10 A, IE = 0 | 2 |
| Collector-Emitter Breakdown Voltage (2222A NPN) | V(BR)CEO | 40 | | | V | IC = 10mA, IB = 0 | 2 |
| Emitter-Base Breakdown Voltage (2222A NPN) | V(BR)EBO | 6 | | | V | IE = 10 A, IC = 0 | 2 |
| Collector Cutoff Current (2222A NPN) | ICBO | | | 10 | nA | VCB = 60V, IE = 0 | 2 |
| Emitter Cutoff Current (2222A NPN) | IEBO | | | 10 | nA | VEB = 3.0V, IC = 0 | 2 |
| Base Cutoff Current (2222A NPN) | IBL | | | 20 | nA | VCE = 60V, VEB(OFF) = 3.0V | 2 |
| DC Current Gain (2222A NPN) | hFE | 35 | | | | IC = 100 A, VCE = 10V | 2 |
| DC Current Gain (2222A NPN) | hFE | 50 | | | | IC = 1.0mA, VCE = 10V | 2 |
| DC Current Gain (2222A NPN) | hFE | 75 | | | | IC = 10mA, VCE = 10V | 2 |
| DC Current Gain (2222A NPN) | hFE | 100 | | | | IC = 150mA, VCE = 10V | 2 |
| DC Current Gain (2222A NPN) | hFE | 40 | | | | IC = 500mA, VCE = 10V | 2 |
| Collector-Emitter Saturation Voltage (2222A NPN) | VCE(SAT) | | | 0.3 | V | IC = 150mA, IB = 15mA | 2 |
| Collector-Emitter Saturation Voltage (2222A NPN) | VCE(SAT) | | | 1 | V | IC = 500mA, IB = 50mA | 2 |
| Base-Emitter Saturation Voltage (2222A NPN) | VBE(SAT) | 0.6 | | 1.2 | V | IC = 150mA, IB = 15mA | 2 |
| Base-Emitter Saturation Voltage (2222A NPN) | VBE(SAT) | | | 2 | V | IC = 500mA, IB = 50mA | 2 |
| Output Capacitance (2222A NPN) | Cobo | | | 8 | pF | VCB = 10V, f = 1.0MHz, IE = 0 | 2 |
| Input Capacitance (2222A NPN) | Cibo | | | 25 | pF | VEB = 0.5V, f = 1.0MHz, IC = 0 | 2 |
| Current Gain-Bandwidth Product (2222A NPN) | fT | 300 | | | MHz | VCE = 20V, IC = 20mA, f = 100MHz | 2 |
| Delay Time (2222A NPN) | td | | | 10 | ns | VCC = 30V, IC = 150mA, VBE(off) = - 0.5V, IB1 = 15mA | 2 |
| Rise Time (2222A NPN) | tr | | | 25 | ns | VCC = 30V, IC = 150mA, VBE(off) = - 0.5V, IB1 = 15mA | 2 |
| Storage Time (2222A NPN) | ts | | | 225 | ns | VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA | 2 |
| Fall Time (2222A NPN) | tf | | | 60 | ns | VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA | 2 |
| Collector-Base Breakdown Voltage (2907A PNP) | V(BR)CBO | -60 | | | V | IC = -10 A, IE = 0 | 3 |
| Collector-Emitter Breakdown Voltage (2907A PNP) | V(BR)CEO | -60 | | | V | IC = -10mA, IB = 0 | 3 |
| Emitter-Base Breakdown Voltage (2907A PNP) | V(BR)EBO | -5 | | | V | IE = -10 A, IC = 0 | 3 |
| Collector Cutoff Current (2907A PNP) | ICBO | | | -10 | nA | VCB = -50V, IE = 0 | 3 |
| Collector Cutoff Current (2907A PNP) | ICEX | | | -50 | nA | VCE = -30V, VEB(OFF) = -0.5V | 3 |
| Base Cutoff Current (2907A PNP) | IBL | | | -50 | nA | VCE = -30V, VEB(OFF) = -0.5V | 3 |
| DC Current Gain (2907A PNP) | hFE | 75 | | | | IC = -100µA, VCE = -10V | 3 |
| DC Current Gain (2907A PNP) | hFE | 100 | | | | IC = -1.0mA, VCE = -10V | 3 |
| DC Current Gain (2907A PNP) | hFE | 50 | | | | IC = -500mA, VCE = -10V | 3 |
| Collector-Emitter Saturation Voltage (2907A PNP) | VCE(SAT) | | | -0.4 | V | IC = -150mA, IB = -15mA | 3 |
| Collector-Emitter Saturation Voltage (2907A PNP) | VCE(SAT) | | | -1.6 | V | IC = -500mA, IB = -50mA | 3 |
| Base-Emitter Saturation Voltage (2907A PNP) | VBE(SAT) | | | -1.3 | V | IC = 150mA, IB = 15mA | 3 |
| Base-Emitter Saturation Voltage (2907A PNP) | VBE(SAT) | | | -2.6 | V | IC = 500mA, IB = 50mA | 3 |
| Output Capacitance (2907A PNP) | Cobo | | | 8 | pF | VCB = -10V, f = 1.0MHz, IE = 0 | 3 |
| Input Capacitance (2907A PNP) | Cibo | | | 30 | pF | VEB = -2.0V, f = 1.0MHz, IC = 0 | 3 |
| Current Gain-Bandwidth Product (2907A PNP) | fT | 200 | | | MHz | VCE = -20V, IC = -50mA, f = 100MHz | 3 |
| Turn-On Time (2907A PNP) | ton | | | 45 | ns | VCC = -30V, IC = -150mA, IB1 = -15mA | 3 |
| Delay Time (2907A PNP) | td | | | 10 | ns | VCC = -30V, IC = -150mA, IB1 = -15mA | 3 |
| Rise Time (2907A PNP) | tr | | | 40 | ns | VCC = -30V, IC = -150mA, IB1 = -15mA | 3 |
| Turn-Off Time (2907A PNP) | toff | | | 100 | ns | VCC = -6.0V, IC = -150mA, IB1 = IB2 = -15mA | 3 |
| Storage Time (2907A PNP) | ts | | | 80 | ns | VCC = -6.0V, IC = -150mA, IB1 = IB2 = -15mA | 3 |
| Fall Time (2907A PNP) | tf | | | 30 | ns | VCC = -6.0V, IC = -150mA, IB1 = IB2 = -15mA | 3 |
| Collector-Emitter Voltage, 2222A NPN (Maximum Ratings) | VCEO | | | 40 | V | | 1 |
| Collector-Base Voltage, 2222A NPN (Maximum Ratings) | VCBO | | | 75 | V | | 1 |
| Emitter-Base Voltage, 2222A NPN (Maximum Ratings) | VEBO | | | 6 | V | | 1 |
| Collector Current - Continuous, 2222A NPN (Maximum Ratings) | IC | | | 600 | mA | | 1 |
| Collector-Base Voltage, 2907A PNP (Maximum Ratings) | VCBO | | | -60 | V | | 1 |
| Collector-Emitter Voltage, 2907A PNP (Maximum Ratings) | VCEO | | | -60 | V | | 1 |
| Emitter-Base Voltage, 2907A PNP (Maximum Ratings) | VEBO | | | -5 | V | | 1 |
| Collector Current - Continuous, 2907A PNP (Maximum Ratings) | IC | | | -600 | mA | | 1 |
| Total Power Dissipation | Pd | | | 300 | mW | Note 1: device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch | 1 |
| Thermal Resistance, Junction to Ambient | RθJA | | | 417 | C/W | Note 1: device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch | 1 |
| Operating and Storage Temperature Range | Tj, TSTG | -55 | | 150 | C | | 1 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | Terminals: Finish - Matte Tin annealed over Copper | 1 |
## CAD (KiCad official)
- Symbol: `MMDT2227M-7`
- Footprint: `Package_TO_SOT_SMD:SOT-23-6`
- 3D model: SOT-26 (KiCad packages3D, STEP)
- 3D model files: `mmdt2227m-7-etched.step` / `mmdt2227m-7-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mmdt2227m-7.step` / `mmdt2227m-7.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Diodes Incorporated datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586202472276217856) (4 pp, sha256 `9e5eecd842c283e8`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/mmdt2227m-7-datasheet.pdf)