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MMDT2227DW

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CBI Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMDT2227DW

CBI · Bipolar (BJT) · SOT-363

MMDT2227DW from CBI, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E2 passive Emitter of transistor 2 (the left-hand device in the datasheet schematic, drawn as NPN); transistor 2 ratings per the 2222A table are VCEO 40 V, IC 600 mA.
2 B2 input Base of transistor 2 (drawn as NPN, 2222A); VEBO rating 6 V.
3 C1 passive Collector of transistor 1 (the right-hand device in the schematic, drawn as PNP); the 2907A table gives VCEO -60 V, IC -600 mA.
4 E1 passive Emitter of transistor 1 (drawn as PNP, 2907A); VEBO rating -5 V.
5 B1 input Base of transistor 1 (drawn as PNP, 2907A).
6 C2 passive Collector of transistor 2 (drawn as NPN, 2222A); VCEO 40 V, IC 600 mA continuous.

Key specifications

Parameter Value
Manufacturer CBI
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage (NPN 2222A) VCBO 75 V 1
Collector-Emitter Voltage (NPN 2222A) VCEO 40 V 1
Emitter-Base Voltage (NPN 2222A) VEBO 6 V 1
Collector Current -Continuous (NPN 2222A) IC 600 mA 1
Collector Power Dissipation (NPN 2222A) PC 200 mW 1
Junction Temperature (NPN 2222A) TJ 150 ℃ 1
Storage Temperature (NPN 2222A) Tstg -55 150 ℃ 1
Collector-Base Voltage (PNP 2907A) VCBO -60 V 2
Collector-Emitter Voltage (PNP 2907A) VCEO -60 V 2
Emitter-Base Voltage (PNP 2907A) VEBO -5 V 2
Collector Current -Continuous (PNP 2907A) IC -600 mA 2
Collector Power Dissipation (PNP 2907A) PC 200 mW 2
Junction Temperature (PNP 2907A) TJ 150 ℃ 2
Storage Temperature (PNP 2907A) Tstg -55 150 ℃ 2
Collector-base breakdown voltage (NPN 2222A) V(BR)CBO 75 V IC= 10μA, IE=0 1
Collector-emitter breakdown voltage (NPN 2222A) V(BR)CEO 40 V IC= 10mA, IB=0 1
Emitter-base breakdown voltage (NPN 2222A) V(BR)EBO 6 V IE=10μA.IC=0 1
Collector cut-off current (NPN 2222A) ICBO 10 nA VCB= 60V, IE=0 1
Emitter cut-off current (NPN 2222A) IEBO 10 nA VEB= 3 V, IC=0 1
DC current gain (NPN 2222A) hFE(1) 35 VCE=10V, IC= 0.1mA 1
DC current gain (NPN 2222A) hFE(2) 50 VCE=10V, IC= 1mA 1
DC current gain (NPN 2222A) hFE(3) 75 VCE=10V, IC= 10mA 1
DC current gain (NPN 2222A) hFE(4) 100 300 VCE=10V, IC= 150mA 1
DC current gain (NPN 2222A) hFE(5) 40 VCE=10V, IC= 500mA 1
Collector-emitter saturation voltage (NPN 2222A) VCE(sat)1 0.3 V IC=150mA, IB= 15mA 1
Collector-emitter saturation voltage (NPN 2222A) VCE(sat)2 1 V IC=500mA, IB= 50mA 1
Base-emitter saturation voltage (NPN 2222A) VBE(sat)1 0.6 1.2 V IC=150mA, IB=15mA 1
Base-emitter saturation voltage (NPN 2222A) VBE(sat)2 2 V IC=500mA, IB= 50mA 1
Transition frequency (NPN 2222A) fT 300 MHz VCE=20V, IC= 20mA, f=100MHz 1
Output Capacitance (NPN 2222A) Cob 8 pF VCB=10V, IE=0,f=1MHz 1
Input Capacitance (NPN 2222A) Cib 25 pF VEB=0.5V,IC= 0,f=1MHz 1
Noise Figure (NPN 2222A) NF 4 dB VCE=10V, IC=100μA, f=1KHz,Rs=1KΩ 1
Delay time (NPN 2222A) td 10 ns 2
Rise time (NPN 2222A) tr 25 ns 2
Storage time (NPN 2222A) tS 225 ns 2
Fall time (NPN 2222A) tf 60 ns VCC=30V, IC=150mA, VBE(off)=0.5V,IB1=15mA 2
Collector-base breakdown voltage (PNP 2907A) V(BR)CBO -60 V IC= -10μA, IE=0 2
Collector-emitter breakdown voltage (PNP 2907A) V(BR)CEO -60 V IC= -10mA, IB=0 2
Emitter-base breakdown voltage (PNP 2907A) V(BR)EBO -5 V IE=-10μA, IC=0 2
Collector cut-off current (PNP 2907A) ICBO -10 nA VCB=-50V, IE=0 2
Collector cut-off current (PNP 2907A) ICEX -50 nA VCE=-30V,VEB(off)=-0.5V 2
Emitter cut-off current (PNP 2907A) IEBO -10 nA VEB=-3V, IC=0 2
DC current gain (PNP 2907A) hFE(1) 75 VCE=-10V, IC= -0.1mA 2
DC current gain (PNP 2907A) hFE(2) 100 VCE=-10V, IC= -1mA 2
DC current gain (PNP 2907A) hFE(4) 100 300 VCE=-10V, IC= -150mA 2
DC current gain (PNP 2907A) hFE(5) 50 VCE=-10V, IC=-500mA 2
Collector-emitter saturation voltage (PNP 2907A) VCE(sat)1 -0.4 V IC=-150mA, IB=-15mA 2
Collector-emitter saturation voltage (PNP 2907A) VCE(sat)2 -1.6 V IC=-500mA, IB=- 50mA 2
Base-emitter saturation voltage (PNP 2907A) VBE(sat)1 -1.3 V IC=-150mA, IB=-15mA 2
Base-emitter saturation voltage (PNP 2907A) VBE(sat)2 -2.6 V IC=-500mA, IB= -50mA 2
Transition frequency (PNP 2907A) fT 200 MHz VCE=-20V, IC= -50mA,f=100MHz 2
Output Capacitance (PNP 2907A) Cob 8 pF VCB=-10V, IE= 0,f=1MHz 2
Input Capacitance (PNP 2907A) Cib 30 pF VEB=-2V, IC= 0,f=1MHz 2
Delay time (PNP 2907A) td 10 ns 2
Rise time (PNP 2907A) tr 40 ns 2
Storage time (PNP 2907A) ts 225 ns 2
Fall time (PNP 2907A) tf 60 ns VCC=-30V,IC=-150mA, IB1=-15mA 2

CAD (KiCad official)

  • Symbol: MMDT2227DW
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: mmdt2227dw-etched.step / mmdt2227dw-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmdt2227dw.step / mmdt2227dw.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: CBI datasheet (3 pp, sha256 e176be9e74d8305d, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF