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Contents

README

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MMDT2227-7-F

Diodes Incorporated · Bipolar (BJT) · SOT-363

MMDT2227-7-F from Diodes Incorporated, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E2 passive Emitter of transistor 2 (Q2), per the top-view pin-out.
2 B2 input Base of transistor 2 (Q2), per the top-view pin-out.
3 C1 passive Collector of transistor 1 (Q1), per the top-view pin-out.
4 E1 passive Emitter of transistor 1 (Q1), per the top-view pin-out.
5 B1 input Base of transistor 1 (Q1), per the top-view pin-out.
6 C2 passive Collector of transistor 2 (Q2), per the top-view pin-out.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage (2222A NPN, absolute maximum) VCBO 75 V 2
Collector-Emitter Voltage (2222A NPN, absolute maximum) VCEO 40 V 2
Emitter-Base Voltage (2222A NPN, absolute maximum) VEBO 6 V 2
Continuous Collector Current (2222A NPN, absolute maximum) IC 600 mA 2
Collector-Base Voltage (2907A PNP, absolute maximum) VCBO -60 V 2
Collector-Emitter Voltage (2907A PNP, absolute maximum) VCEO -60 V 2
Emitter-Base Voltage (2907A PNP, absolute maximum) VEBO -6 V 2
Continuous Collector Current (2907A PNP, absolute maximum) IC -600 mA 2
Power Dissipation PD 200 mW Device mounted on 1 inch x 0.85 inch x 0.062 inch FR-4 PCB (Note 5) 2
Thermal Resistance, Junction to Ambient RθJA 625 °C/W Device mounted on 1 inch x 0.85 inch x 0.062 inch FR-4 PCB (Note 5) 2
Thermal Resistance, Junction to Case RθJC 150 °C/W Thermal resistance from junction to the top of package (Note 6) 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Collector-Base Breakdown Voltage (2222A NPN) BVCBO 75 V IC = 100μA, IE = 0 3
Collector-Emitter Breakdown Voltage (2222A NPN) BVCEO 40 V IC = 10mA, IB = 0 3
Emitter-Base Breakdown Voltage (2222A NPN) BVEBO 6 V IE = 100μA, IC = 0 3
Collector Cutoff Current (2222A NPN) ICBO 10 nA VCB = 60V, IE = 0 3
Emitter Cutoff Current (2222A NPN) IEBO 10 nA VEB = 5.0V, IC = 0 3
Base Cutoff Current (2222A NPN) IBL 20 nA VCE = 60V, VEB(off) = 3.0V 3
Collector-Emitter Saturation Voltage (2222A NPN) VCE(sat) 0.3 V IC = 150mA, IB = 15mA 3
Collector-Emitter Saturation Voltage (2222A NPN) VCE(sat) 1 V IC = 500mA, IB = 50mA 3
Base-Emitter Saturation Voltage (2222A NPN) VBE(sat) 0.6 1.2 V IC = 150mA, IB = 15mA 3
Base-Emitter Saturation Voltage (2222A NPN) VBE(sat) 2 V IC = 500mA, IB = 50mA 3
Output Capacitance (2222A NPN) Cobo 8 pF VCB = 10V, f = 1.0MHz, IE = 0 3
Input Capacitance (2222A NPN) Cibo 25 pF VEB = 0.5V, f = 1.0MHz, IC = 0 3
Current Gain-Bandwidth Product (2222A NPN) fT 300 MHz VCE = 20V, IC = 20mA, f = 100MHz 3
Noise Figure (2222A NPN) NF 4 dB VCE = 10V, IC = 100μA, RS = 1.0kΩ, f = 1.0kHz 3
Delay Time (2222A NPN) td 10 ns VCC = 30V, IC = 150mA, VBE(off) = -0.5V, IB1 = 15mA 3
Rise Time (2222A NPN) tr 25 ns VCC = 30V, IC = 150mA, VBE(off) = -0.5V, IB1 = 15mA 3
Storage Time (2222A NPN) ts 225 ns VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA 3
Fall Time (2222A NPN) tf 60 ns VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA 3
Collector-Base Breakdown Voltage (2907A PNP) BVCBO -60 V IC = -100μA, IE = 0 4
Collector-Emitter Breakdown Voltage (2907A PNP) BVCEO -60 V IC = -10mA, IB = 0 4
Emitter-Base Breakdown Voltage (2907A PNP) BVEBO -6 V IE = -100μA, IC = 0 4
Collector Cutoff Current (2907A PNP) ICBO -10 nA VCB = -50V, IE = 0 4
Collector Cutoff Current (2907A PNP) ICEX -50 nA VCE = -30V, VEB(off) = -0.5V 4
Base Cutoff Current (2907A PNP) IBL -50 nA VCE = -30V, VEB(off) = -0.5V 4
Collector-Emitter Saturation Voltage (2907A PNP) VCE(sat) -0.4 V IC = -150mA, IB = -15mA 4
Collector-Emitter Saturation Voltage (2907A PNP) VCE(sat) -1.6 V IC = -500mA, IB = -50mA 4
Base-Emitter Saturation Voltage (2907A PNP) VBE(sat) -1.3 V IC = 150mA, IB = 15mA 4
Base-Emitter Saturation Voltage (2907A PNP) VBE(sat) -2.6 V IC = 500mA, IB = 50mA 4
Output Capacitance (2907A PNP) Cobo 8 pF VCB = -10V, f = 1.0MHz, IE = 0 4
Input Capacitance (2907A PNP) Cibo 30 pF VEB = -2.0V, f = 1.0MHz, IC = 0 4
Current Gain-Bandwidth Product (2907A PNP) fT 200 MHz VCE = -20V, IC = -50mA, f = 100MHz 4
Turn-On Time (2907A PNP) ton 45 ns 4
Delay Time (2907A PNP) td 10 ns VCC = -30V, IC = -150mA, IB1 = -15mA 4
Rise Time (2907A PNP) tr 40 ns VCC = -30V, IC = -150mA, IB1 = -15mA 4
Turn-Off Time (2907A PNP) toff 100 ns 4
Storage Time (2907A PNP) ts 80 ns VCC = -6.0V, IC = -150mA, IB1 = IB2 = -15mA 4
Fall Time (2907A PNP) tf 30 ns VCC = -6.0V, IC = -150mA, IB1 = IB2 = -15mA 4

CAD (KiCad official)

  • Symbol: MMDT2227-7-F
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: mmdt2227-7-f-etched.step / mmdt2227-7-f-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmdt2227-7-f.step / mmdt2227-7-f.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (6 pp, sha256 c1598cbb66738942, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF