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MMDT2222ADW

Public Made by Adom

by adom

CBI Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMDT2222ADW

CBI · Bipolar (BJT) · SOT-363

MMDT2222ADW from CBI, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E2 passive Emitter of transistor 2 (NPN); VEBO max 6 V, collector current up to 600 mA continuous.
2 B2 passive Base of transistor 2 (NPN); hFE 100 to 300 at VCE=10V, IC=150mA.
3 C1 passive Collector of transistor 1 (NPN); VCEO max 40 V, VCBO max 75 V, IC max 600 mA continuous.
4 E1 passive Emitter of transistor 1 (NPN); VEBO max 6 V, collector current up to 600 mA continuous.
5 B1 passive Base of transistor 1 (NPN); hFE 100 to 300 at VCE=10V, IC=150mA.
6 C2 passive Collector of transistor 2 (NPN); VCEO max 40 V, VCBO max 75 V, IC max 600 mA continuous.

Key specifications

Parameter Value
Manufacturer CBI
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO 75 V IC= 10μA, IE=0 1
Collector-emitter breakdown voltage V(BR)CEO 40 V IC= 10mA, IB=0 1
Emitter-base breakdown voltage V(BR)EBO 6 V IE=10μA, IC=0 1
Collector cut-off current ICBO 10 nA VCB= 60V, IE=0 1
Emitter cut-off current IEBO 10 nA VEB= 3 V, IC=0 1
DC current gain hFE(1) 35 VCE=10V, IC= 0.1mA 1
DC current gain hFE(2) 50 VCE=10V, IC= 1mA 1
DC current gain hFE(3) 75 VCE=10V, IC= 10mA 1
DC current gain hFE(4) 100 300 VCE=10V, IC= 150mA 1
DC current gain hFE(5) 40 VCE=10V, IC= 500mA 1
Collector-emitter saturation voltage VCE(sat)1 0.3 V IC=150mA, IB= 15mA 1
Collector-emitter saturation voltage VCE(sat)2 1 V IC=500mA, IB= 50mA 1
Base-emitter saturation voltage VBE(sat)1 0.6 1.2 V IC=150mA, IB=15mA 1
Base-emitter saturation voltage VBE(sat)2 2 V IC=500mA, IB= 50mA 1
Transition frequency fT 300 MHz VCE=20V, IC= 20mA, f=100MHz 1
Output Capacitance Cob 8 pF VCB=10V, IE=0, f=1MHz 1
Input Capacitance Cib 25 pF VEB=0.5V, IC=0, f=1MHz 1
Noise Figure NF 4 dB VCE=10V, IC=100μA, f=1KHz, Rs=1KΩ 1
Delay time td 10 nS 1
Rise time tr 25 nS VCC=30V, IC=150mA, VBE(off)=0.5V,IB1=15mA 1
Storage time tS 225 nS 1
Fall time tf 60 nS VCC=30V, IC=150mA, IB1= -IB2= 15mA 1
Collector-base voltage VCBO 75 V Ta=25℃ 1
Collector-emitter voltage VCEO 40 V Ta=25℃ 1
Emitter-base voltage VEBO 6 V Ta=25℃ 1
Collector current - continuous IC 600 mA Ta=25℃ 1
Collector power dissipation PC 200 mW Ta=25℃ 1
Junction temperature TJ 150 ℃ Ta=25℃ 1
Storage temperature Tstg -55 150 ℃ 1

CAD (KiCad official)

  • Symbol: MMDT2222ADW
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: mmdt2222adw-etched.step / mmdt2222adw-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmdt2222adw.step / mmdt2222adw.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: CBI datasheet (3 pp, sha256 aa168c224f7a4b45, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF