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MMBZ27VAL

Nexperia · ESD And Surge Protection (TVS/ESD) · SOT-23

MMBZ27VAL from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K1 passive Cathode of diode 1; the ESD and transient ratings are measured from pin 1 or 2 to pin 3.
2 K2 passive Cathode of diode 2; the ESD and transient ratings are measured from pin 1 or 2 to pin 3.
3 A passive Common anode shared by both unidirectional diodes; it is the reference terminal for the rated peak pulse power, clamping voltage and ESD ratings.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Circuit Protection
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
rated peak pulse power PPPM 40 W 3
rated peak pulse current IPPM 1 A tp = 10/1000 µs 3
total power dissipation Ptot 265 mW Tamb ≤ 25 °C 3
total power dissipation Ptot 360 mW 3
junction temperature Tj 150 °C 3
ambient temperature Tamb -55 150 °C 3
storage temperature Tstg -65 150 °C 3
electrostatic discharge voltage, IEC 61000-4-2 contact discharge VESD 30 kV IEC 61000-4-2 (contact discharge); Tamb = 25 °C 3
electrostatic discharge voltage, IEC 61000-4-2 air discharge VESD 15 kV IEC 61000-4-2 (air discharge); Tamb = 25 °C 3
electrostatic discharge voltage, human body model VESD 8 kV MIL-STD-883; human body model (HBM); Tamb = 25 °C 3
electrostatic discharge voltage, machine model VESD 2 kV machine model; Tamb = 25 °C 3
thermal resistance from junction to ambient Rth(j-a) 460 K/W in free air 4
thermal resistance from junction to ambient (mounting pad for cathode 1 cm²) Rth(j-a) 340 K/W 4
thermal resistance from junction to solder point Rth(j-sp) 50 K/W 4
forward voltage VF 0.9 V IF = 10 mA; Tamb = 25 °C 4
reverse standoff voltage VRWM 22 V Tamb = 25 °C 4
breakdown voltage VBR 25.65 27 28.35 V IR = 1 mA; Tamb = 25 °C 4
reverse leakage current IRM 0.1 5 nA VRWM = 22 V; Tamb = 25 °C 4
diode capacitance Cd 48 60 pF f = 1 MHz; VR = 0 V; Tamb = 25 °C 4
clamping voltage VCL 40 V IPPM = 1 A; Tamb = 25 °C 4

CAD (KiCad official)

  • Symbol: MMBZ27VAL
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbz27val-etched.step / mmbz27val-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbz27val.step / mmbz27val.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (11 pp, sha256 0dd9f8d810510349, retrieved 2026-10-17, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF