component

MMBTSC945H

Public Made by Adom

by adom

PJSEMI Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsmmbtsc945hfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 7d ago
viewers mmbtsc945h: viewers · Ray 7d ago
mmbtsc945h-etched.glb Publish 0.1.0 · Ray 7d ago
mmbtsc945h-etched.step mmbtsc945h: factory component page (tier=lcsc) · Ray 7d ago
mmbtsc945h-hero.glb mmbtsc945h: hero GLB from the etched model (keeps the MPN mark) · Ray 7d ago
mmbtsc945h-hero.overlay.json Publish 0.1.0 · Ray 7d ago
mmbtsc945h.glb Publish 0.1.0 · Ray 7d ago
mmbtsc945h.kicad_mod Publish 0.1.0 · Ray 7d ago
mmbtsc945h.kicad_sym Publish 0.1.0 · Ray 7d ago
mmbtsc945h.lbr Publish 0.1.0 · Ray 7d ago
mmbtsc945h.step Publish 0.1.0 · Ray 7d ago
package.json Publish 0.1.0 · Ray 7d ago
page.json Set visibility: public · Ray 7d ago
README.md Publish 0.1.0 · Ray 7d ago

MMBTSC945H

PJSEMI · Bipolar (BJT) · SOT-23

MMBTSC945H from PJSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base input Base terminal of the NPN transistor; the datasheet gives VCBO 60 V and VEBO 5 V maximum ratings and VBE(sat) of 1 V max at IC = 100 mA, IB = 10 mA.
2 Emitter passive Emitter terminal of the NPN transistor; the datasheet gives VEBO 5 V maximum and emitter-base breakdown V(BR)EBO of 5 V minimum at IE = 100 µA.
3 Collector passive Collector terminal of the NPN transistor; the datasheet gives VCEO 50 V, VCBO 60 V and a maximum collector current IC of 150 mA.

Key specifications

Parameter Value
Manufacturer PJSEMI
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
DC Current Gain (Current Gain Group H) HFE 200 400 - VCE = 6 V, IC = 1 mA 1
Transition Frequency fT 150 MHz VCE = 6 V, IC = 10 mA, f = 30 MHz 1
Collector Base Breakdown Voltage V(BR)CBO 60 V IC = 100 μA 1
Collector Emitter Breakdown Voltage V(BR)CEO 50 V IC = 1 mA 1
Emitter Base Breakdown Voltage V(BR)EBO 5 V IE = 100 μA 1
Collector Base Cutoff Current ICBO 100 nA VCB = 60 V 1
Emitter Base Cutoff Current IEBO 100 nA VEB = 5 V 1
Collector Emitter Saturation Voltage VCE(sat) 0.3 V IC = 100 mA, IB = 10 mA 1
Base Emitter Saturation Voltage VBE(sat) 1 V IC = 100 mA, IB = 10 mA 1
Collector Output Capacitance Cob 3 pF VCB = 10 V, f = 1 MHz 1
Collector Base Voltage VCBO 60 V 1
Collector Emitter Voltage VCEO 50 V 1
Emitter Base Voltage VEBO 5 V 1
Collector Current IC 150 mA 1
Power Dissipation PD 200 mW 1
Junction Temperature TJ 150 ℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1

CAD (KiCad official)

  • Symbol: MMBTSC945H
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbtsc945h-etched.step / mmbtsc945h-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbtsc945h.step / mmbtsc945h.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PJSEMI datasheet (3 pp, sha256 150f4d35e2fcbee2, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF