component
MMBTSC3356W-3G
Public Made by Adomby adom
CBI Bipolar (BJT), SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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MMBTSC3356W-3G
CBI · Bipolar (BJT) · SOT-323
MMBTSC3356W-3G from CBI, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; VEBO max 3 V, collector-base voltage max 20 V (VCBO). |
| 2 | E | passive | Emitter of the NPN transistor; VEBO max 3 V relative to base. |
| 3 | C | passive | Collector of the NPN transistor; VCEO max 12 V, IC max 100 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | CBI |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC Current Gain, Group Q | hFE | 50 | 100 | - | VCE = 10 V, IC = 20 mA | 1 | |
| DC Current Gain, Group R | hFE | 80 | 160 | - | VCE = 10 V, IC = 20 mA | 1 | |
| DC Current Gain, Group S | hFE | 125 | 250 | - | VCE = 10 V, IC = 20 mA | 1 | |
| Collector Cutoff Current | ICBO | 1 | µA | VCB = 10 V | 1 | ||
| Emitter Cutoff Current | IEBO | 1 | µA | VEB = 1 V | 1 | ||
| Feed-Back Capacitance | Cre | 0.55 | 1 | pF | VCB = 10 V, f = 1 MHz | 1 | |
| Noise Figure | NF | 1.1 | 2 | dB | VCE = 10 V, IC = 7 mA, f = 1 GHz | 1 | |
| Collector Base Voltage | VCBO | 20 | V | 1 | |||
| Collector Emitter Voltage | VCEO | 12 | V | 1 | |||
| Emitter Base Voltage | VEBO | 3 | V | 1 | |||
| Collector Current | IC | 100 | mA | 1 | |||
| Power Dissipation | Ptot | 200 | mW | 1 | |||
| Junction Temperature | Tj | 150 | °C | 1 | |||
| Storage Temperature Range | TS | -65 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
MMBTSC3356W-3G - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
mmbtsc3356w-3g-etched.step/mmbtsc3356w-3g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmbtsc3356w-3g.step/mmbtsc3356w-3g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: CBI datasheet (3 pp, sha256
0db19422bf5af54e, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MMBTSC3356W-3G
**CBI** · Bipolar (BJT) · SOT-323
MMBTSC3356W-3G from CBI, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; VEBO max 3 V, collector-base voltage max 20 V (VCBO). |
| 2 | E | passive | Emitter of the NPN transistor; VEBO max 3 V relative to base. |
| 3 | C | passive | Collector of the NPN transistor; VCEO max 12 V, IC max 100 mA. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | CBI |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC Current Gain, Group Q | hFE | 50 | | 100 | - | VCE = 10 V, IC = 20 mA | 1 |
| DC Current Gain, Group R | hFE | 80 | | 160 | - | VCE = 10 V, IC = 20 mA | 1 |
| DC Current Gain, Group S | hFE | 125 | | 250 | - | VCE = 10 V, IC = 20 mA | 1 |
| Collector Cutoff Current | ICBO | | | 1 | µA | VCB = 10 V | 1 |
| Emitter Cutoff Current | IEBO | | | 1 | µA | VEB = 1 V | 1 |
| Feed-Back Capacitance | Cre | | 0.55 | 1 | pF | VCB = 10 V, f = 1 MHz | 1 |
| Noise Figure | NF | | 1.1 | 2 | dB | VCE = 10 V, IC = 7 mA, f = 1 GHz | 1 |
| Collector Base Voltage | VCBO | | | 20 | V | | 1 |
| Collector Emitter Voltage | VCEO | | | 12 | V | | 1 |
| Emitter Base Voltage | VEBO | | | 3 | V | | 1 |
| Collector Current | IC | | | 100 | mA | | 1 |
| Power Dissipation | Ptot | | | 200 | mW | | 1 |
| Junction Temperature | Tj | | | 150 | °C | | 1 |
| Storage Temperature Range | TS | -65 | | 150 | °C | | 1 |
## CAD (KiCad official)
- Symbol: `MMBTSC3356W-3G`
- Footprint: `Package_TO_SOT_SMD:SOT-323_SC-70`
- 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files: `mmbtsc3356w-3g-etched.step` / `mmbtsc3356w-3g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mmbtsc3356w-3g.step` / `mmbtsc3356w-3g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [CBI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590920830996606976) (3 pp, sha256 `0db19422bf5af54e`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/mmbtsc3356w-3g-datasheet.pdf)