component
MMBTSC3356T-3G
Public Made by Adomby adom
CBI Bipolar (BJT), SOT-523. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| mmbtsc3356t-3g-etched.glb | 17d ago |
| mmbtsc3356t-3g-etched.step | 17d ago |
| mmbtsc3356t-3g-hero.glb | 17d ago |
| mmbtsc3356t-3g-hero.overlay.json | 17d ago |
| mmbtsc3356t-3g.glb | 17d ago |
| mmbtsc3356t-3g.kicad_mod | 17d ago |
| mmbtsc3356t-3g.kicad_sym | 17d ago |
| mmbtsc3356t-3g.lbr | 17d ago |
| mmbtsc3356t-3g.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
MMBTSC3356T-3G
CBI · Bipolar (BJT) · SOT-523
MMBTSC3356T-3G from CBI, in a SOT-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base of the NPN transistor; emitter-base voltage limited to 3 V (VEBO) and emitter cutoff current max 1 µA at VEB = 1 V. |
| 2 | EMITTER | passive | Emitter of the NPN transistor; VCEO max 12 V and collector current max 100 mA flow through it. |
| 3 | COLLECTOR | passive | Collector of the NPN transistor; VCBO max 20 V, VCEO max 12 V, IC max 100 mA, total power dissipation 200 mW. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | CBI |
| Package | SOT-523 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector Base Voltage | VCBO | 20 | V | Ta = 25 °C | 1 | ||
| Collector Emitter Voltage | VCEO | 12 | V | Ta = 25 °C | 1 | ||
| Emitter Base Voltage | VEBO | 3 | V | Ta = 25 °C | 1 | ||
| Collector Current | IC | 100 | mA | Ta = 25 °C | 1 | ||
| Power Dissipation | Ptot | 200 | mW | Ta = 25 °C | 1 | ||
| Junction Temperature | Tj | 150 | °C | Ta = 25 °C | 1 | ||
| Storage Temperature Range | TS | -65 | 150 | °C | Ta = 25 °C | 1 | |
| DC Current Gain, Group Q | hFE | 50 | 100 | VCE = 10 V, IC = 20 mA; Current Gain Group Q | 1 | ||
| DC Current Gain, Group R | hFE | 80 | 160 | VCE = 10 V, IC = 20 mA; Current Gain Group R | 1 | ||
| DC Current Gain, Group S | hFE | 125 | 250 | VCE = 10 V, IC = 20 mA; Current Gain Group S | 1 | ||
| Collector Cutoff Current | ICBO | 1 | µA | VCB = 10 V | 1 | ||
| Emitter Cutoff Current | IEBO | 1 | µA | VEB = 1 V | 1 | ||
| Feed-Back Capacitance | Cre | 0.55 | 1 | pF | VCB = 10 V, f = 1 MHz | 1 | |
| Noise Figure | NF | 1.1 | 2 | dB | VCE = 10 V, IC = 7 mA, f = 1 GHz | 1 |
CAD (KiCad official)
- Symbol:
MMBTSC3356T-3G - Footprint:
Package_TO_SOT_SMD:SOT-523 - 3D model: SOT-523, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.8 mm nominal SOT-523 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files:
mmbtsc3356t-3g-etched.step/mmbtsc3356t-3g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmbtsc3356t-3g.step/mmbtsc3356t-3g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: CBI datasheet (3 pp, sha256
6b9c5aac8f8b9042, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).