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MMBTSC3356-7G
Public Made by Adomby adom
CBI Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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MMBTSC3356-7G
CBI · Bipolar (BJT) · SOT-23
MMBTSC3356-7G from CBI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base terminal of the NPN silicon epitaxial planar transistor, with an emitter-base voltage rating of VEBO 3 V and an emitter cutoff current IEBO of 1 µA max at VEB = 1 V. |
| 2 | Emitter | passive | Emitter terminal of the transistor, which must be connected to the guard terminal of the three-terminal capacitance bridge along with the case when measuring Cre. |
| 3 | Collector | passive | Collector terminal of the transistor, rated for VCBO 20 V, VCEO 12 V, and a collector current IC of 100 mA, with total power dissipation Ptot of 200 mW. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | CBI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector Base Voltage | VCBO | 20 | V | 1 | |||
| Collector Emitter Voltage | VCEO | 12 | V | 1 | |||
| Emitter Base Voltage | VEBO | 3 | V | 1 | |||
| Collector Current | IC | 100 | mA | 1 | |||
| Power Dissipation | Ptot | 200 | mW | 1 | |||
| Junction Temperature | Tj | 150 | °C | 1 | |||
| Storage Temperature Range | TS | -65 | 150 | °C | 1 | ||
| DC Current Gain, Group Q | hFE | 50 | 100 | at VCE = 10 V, IC = 20 mA, Current Gain Group Q | 1 | ||
| DC Current Gain, Group R | hFE | 80 | 160 | at VCE = 10 V, IC = 20 mA, Current Gain Group R | 1 | ||
| DC Current Gain, Group S | hFE | 125 | 250 | at VCE = 10 V, IC = 20 mA, Current Gain Group S | 1 | ||
| Collector Cutoff Current | ICBO | 1 | µA | at VCB = 10 V | 1 | ||
| Emitter Cutoff Current | IEBO | 1 | µA | at VEB = 1 V | 1 | ||
| Feed-Back Capacitance | Cre | 0.55 | 1 | pF | at VCB = 10 V, f = 1 MHz; emitter and case connected to guard terminal of three-terminal capacitance bridge (footnote 1) | 1 | |
| Noise Figure | NF | 1.1 | 2 | dB | at VCE = 10 V, IC = 7 mA, f = 1 GHz | 1 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| housing | Abs | SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 | 1 |
CAD (KiCad official)
- Symbol:
MMBTSC3356-7G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
mmbtsc3356-7g-etched.step/mmbtsc3356-7g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmbtsc3356-7g.step/mmbtsc3356-7g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: CBI datasheet (3 pp, sha256
21a01448ebd08e80, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MMBTSC3356-7G
**CBI** · Bipolar (BJT) · SOT-23
MMBTSC3356-7G from CBI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base terminal of the NPN silicon epitaxial planar transistor, with an emitter-base voltage rating of VEBO 3 V and an emitter cutoff current IEBO of 1 µA max at VEB = 1 V. |
| 2 | Emitter | passive | Emitter terminal of the transistor, which must be connected to the guard terminal of the three-terminal capacitance bridge along with the case when measuring Cre. |
| 3 | Collector | passive | Collector terminal of the transistor, rated for VCBO 20 V, VCEO 12 V, and a collector current IC of 100 mA, with total power dissipation Ptot of 200 mW. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | CBI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector Base Voltage | VCBO | | | 20 | V | | 1 |
| Collector Emitter Voltage | VCEO | | | 12 | V | | 1 |
| Emitter Base Voltage | VEBO | | | 3 | V | | 1 |
| Collector Current | IC | | | 100 | mA | | 1 |
| Power Dissipation | Ptot | | | 200 | mW | | 1 |
| Junction Temperature | Tj | | | 150 | °C | | 1 |
| Storage Temperature Range | TS | -65 | | 150 | °C | | 1 |
| DC Current Gain, Group Q | hFE | 50 | | 100 | | at VCE = 10 V, IC = 20 mA, Current Gain Group Q | 1 |
| DC Current Gain, Group R | hFE | 80 | | 160 | | at VCE = 10 V, IC = 20 mA, Current Gain Group R | 1 |
| DC Current Gain, Group S | hFE | 125 | | 250 | | at VCE = 10 V, IC = 20 mA, Current Gain Group S | 1 |
| Collector Cutoff Current | ICBO | | | 1 | µA | at VCB = 10 V | 1 |
| Emitter Cutoff Current | IEBO | | | 1 | µA | at VEB = 1 V | 1 |
| Feed-Back Capacitance | Cre | | 0.55 | 1 | pF | at VCB = 10 V, f = 1 MHz; emitter and case connected to guard terminal of three-terminal capacitance bridge (footnote 1) | 1 |
| Noise Figure | NF | | 1.1 | 2 | dB | at VCE = 10 V, IC = 7 mA, f = 1 GHz | 1 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| housing | Abs | | SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 | 1 |
## CAD (KiCad official)
- Symbol: `MMBTSC3356-7G`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `mmbtsc3356-7g-etched.step` / `mmbtsc3356-7g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mmbtsc3356-7g.step` / `mmbtsc3356-7g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [CBI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590921058755432448) (3 pp, sha256 `21a01448ebd08e80`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/mmbtsc3356-7g-datasheet.pdf)