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MMBTSC1623-L6

PJSEMI · Bipolar (BJT) · SOT-23

MMBTSC1623-L6 from PJSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base passive Base terminal of the NPN transistor; the datasheet gives no base-specific limit beyond the absolute maximum emitter-base voltage VEBO of 5 V.
2 Emitter passive Emitter terminal of the NPN transistor, with emitter-base voltage limited to VEBO = 5 V and emitter-base breakdown V(BR)EBO of at least 5 V at IE = 100 µA.
3 Collector passive Collector terminal of the NPN transistor, rated for VCBO = 60 V, VCEO = 50 V, collector current IC = 100 mA and total power dissipation PD = 200 mW.

Key specifications

Parameter Value
Manufacturer PJSEMI
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
DC Current Gain (Current Gain Group L6) HFE 200 400 at VCE = 6 V, IC = 1 mA 2
Collector Base Cutoff Current ICBO 0.1 μA at VCB = 60 V 2
Emitter Base Cutoff Current IEBO 0.1 μA at VEB = 5 V 2
Collector Base Breakdown Voltage V(BR)CBO 60 V At IC = 100 μA 2
Collector Emitter Breakdown Voltage V(BR)CEO 50 V at IC = 1 mA 2
Emitter Base Breakdown Voltage V(BR)EBO 5 V at IE = 100 μA 2
Collector Emitter Saturation Voltage VCE(sat) 0.3 V at IC = 100 mA, IB = 10 mA 2
Base Emitter Saturation Voltage VBE(sat) 1 V at IC = 100 mA, IB = 10 mA 2
Transition Frequency FT 250 MHz at VCE = 6 V, IC = 10 mA 2
Collector Base Voltage VCBO 60 V Ratings at 25℃ ambient temperature unless otherwise specified 1
Collector Emitter Voltage VCEO 50 V Ratings at 25℃ ambient temperature unless otherwise specified 1
Emitter Base Voltage VEBO 5 V Ratings at 25℃ ambient temperature unless otherwise specified 1
Collector Current IC 100 mA Ratings at 25℃ ambient temperature unless otherwise specified 1
Power Dissipation PD 200 mW Ratings at 25℃ ambient temperature unless otherwise specified 1
Junction Temperature TJ 150 ℃ Ratings at 25℃ ambient temperature unless otherwise specified 1
Storage Temperature Range TSTG -55 150 ℃ Ratings at 25℃ ambient temperature unless otherwise specified 1

CAD (KiCad official)

  • Symbol: MMBTSC1623-L6
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbtsc1623-l6-etched.step / mmbtsc1623-l6-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbtsc1623-l6.step / mmbtsc1623-l6.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PJSEMI datasheet (4 pp, sha256 191c29f7aa14a352, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF