component
MMBTSC1623-L6
Public Made by Adomby adom
PJSEMI Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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| mmbtsc1623-l6-etched.step | 17d ago |
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MMBTSC1623-L6
PJSEMI · Bipolar (BJT) · SOT-23
MMBTSC1623-L6 from PJSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | passive | Base terminal of the NPN transistor; the datasheet gives no base-specific limit beyond the absolute maximum emitter-base voltage VEBO of 5 V. |
| 2 | Emitter | passive | Emitter terminal of the NPN transistor, with emitter-base voltage limited to VEBO = 5 V and emitter-base breakdown V(BR)EBO of at least 5 V at IE = 100 µA. |
| 3 | Collector | passive | Collector terminal of the NPN transistor, rated for VCBO = 60 V, VCEO = 50 V, collector current IC = 100 mA and total power dissipation PD = 200 mW. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | PJSEMI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC Current Gain (Current Gain Group L6) | HFE | 200 | 400 | at VCE = 6 V, IC = 1 mA | 2 | ||
| Collector Base Cutoff Current | ICBO | 0.1 | μA | at VCB = 60 V | 2 | ||
| Emitter Base Cutoff Current | IEBO | 0.1 | μA | at VEB = 5 V | 2 | ||
| Collector Base Breakdown Voltage | V(BR)CBO | 60 | V | At IC = 100 μA | 2 | ||
| Collector Emitter Breakdown Voltage | V(BR)CEO | 50 | V | at IC = 1 mA | 2 | ||
| Emitter Base Breakdown Voltage | V(BR)EBO | 5 | V | at IE = 100 μA | 2 | ||
| Collector Emitter Saturation Voltage | VCE(sat) | 0.3 | V | at IC = 100 mA, IB = 10 mA | 2 | ||
| Base Emitter Saturation Voltage | VBE(sat) | 1 | V | at IC = 100 mA, IB = 10 mA | 2 | ||
| Transition Frequency | FT | 250 | MHz | at VCE = 6 V, IC = 10 mA | 2 | ||
| Collector Base Voltage | VCBO | 60 | V | Ratings at 25℃ ambient temperature unless otherwise specified | 1 | ||
| Collector Emitter Voltage | VCEO | 50 | V | Ratings at 25℃ ambient temperature unless otherwise specified | 1 | ||
| Emitter Base Voltage | VEBO | 5 | V | Ratings at 25℃ ambient temperature unless otherwise specified | 1 | ||
| Collector Current | IC | 100 | mA | Ratings at 25℃ ambient temperature unless otherwise specified | 1 | ||
| Power Dissipation | PD | 200 | mW | Ratings at 25℃ ambient temperature unless otherwise specified | 1 | ||
| Junction Temperature | TJ | 150 | ℃ | Ratings at 25℃ ambient temperature unless otherwise specified | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | Ratings at 25℃ ambient temperature unless otherwise specified | 1 |
CAD (KiCad official)
- Symbol:
MMBTSC1623-L6 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
mmbtsc1623-l6-etched.step/mmbtsc1623-l6-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmbtsc1623-l6.step/mmbtsc1623-l6.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: PJSEMI datasheet (4 pp, sha256
191c29f7aa14a352, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).