component
MMBTSC1623
Public Made by Adomby adom
ST Semtech Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMMBTSC1623
ST Semtech · Bipolar (BJT) · SOT-23
MMBTSC1623 from ST Semtech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; DC current gain hFE is graded O/Y/G/L at VCE = 6 V, IC = 1 mA, and VEBO is limited to 5 V. |
| 2 | E | passive | Emitter of the NPN transistor; emitter-base voltage is limited to 5 V. |
| 3 | C | passive | Collector of the NPN transistor; VCBO is 60 V, VCEO is 50 V and collector current is up to 100 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ST Semtech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC Current Gain, Group O | hFE | 90 | 180 | at VCE = 6 V, IC = 1 mA; Group O | 1 | ||
| DC Current Gain, Group Y | hFE | 135 | 270 | at VCE = 6 V, IC = 1 mA; Group Y | 1 | ||
| DC Current Gain, Group G | hFE | 200 | 400 | at VCE = 6 V, IC = 1 mA; Group G | 1 | ||
| DC Current Gain, Group L | hFE | 300 | 600 | at VCE = 6 V, IC = 1 mA; Group L | 1 | ||
| Collector Base Breakdown Voltage | V(BR)CBO | 60 | V | at IC = 100 µA | 1 | ||
| Collector Emitter Breakdown Voltage | V(BR)CEO | 50 | V | at IC = 1 mA | 1 | ||
| Emitter Base Breakdown Voltage | V(BR)EBO | 5 | V | at IE = 10 µA | 1 | ||
| Collector Cutoff Current | ICBO | 0.1 | µA | at VCB = 60 V | 1 | ||
| Emitter Cutoff Current | IEBO | 0.1 | µA | at VEB = 5 V | 1 | ||
| Collector Saturation Voltage | VCE(sat) | 0.3 | V | at IC = 100 mA, IB = 10 mA | 1 | ||
| Base Saturation Voltage | VBE(sat) | 1 | V | at IC = 100 mA, IB = 10 mA | 1 | ||
| Collector Base Voltage | VCBO | 60 | V | Ta = 25 °C | 1 | ||
| Collector Emitter Voltage | VCEO | 50 | V | Ta = 25 °C | 1 | ||
| Emitter Base Voltage | VEBO | 5 | V | Ta = 25 °C | 1 | ||
| Collector Current | IC | 100 | mA | Ta = 25 °C | 1 | ||
| Power Dissipation | Ptot | 200 | mW | Ta = 25 °C | 1 | ||
| Junction Temperature | Tj | 150 | °C | 1 | |||
| Storage Temperature Range | TS | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
MMBTSC1623 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
mmbtsc1623-etched.step/mmbtsc1623-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmbtsc1623.step/mmbtsc1623.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ST Semtech datasheet (2 pp, sha256
e3503b16133ac9da, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).