main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 17d ago
viewers mmbtsa1576w: viewers · Ray 17d ago
mmbtsa1576w-etched.glb Publish 0.1.0 · Ray 17d ago
mmbtsa1576w-etched.step mmbtsa1576w: factory component page (tier=lcsc) · Ray 17d ago
mmbtsa1576w-hero.glb mmbtsa1576w: hero GLB from the etched model (keeps the MPN mark) · Ray 17d ago
mmbtsa1576w-hero.overlay.json Publish 0.1.0 · Ray 17d ago
mmbtsa1576w.glb Publish 0.1.0 · Ray 17d ago
mmbtsa1576w.kicad_mod Publish 0.1.0 · Ray 17d ago
mmbtsa1576w.kicad_sym Publish 0.1.0 · Ray 17d ago
mmbtsa1576w.lbr Publish 0.1.0 · Ray 17d ago
mmbtsa1576w.step Publish 0.1.0 · Ray 17d ago
package.json Publish 0.1.0 · Ray 17d ago
page.json Set visibility: public · Ray 17d ago
README.md Publish 0.1.0 · Ray 17d ago

MMBTSA1576W

CBI · Bipolar (BJT) · SOT-323

MMBTSA1576W from CBI, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the PNP transistor; -VEBO max 6 V and DC current gain hFE 120 to 560 (groups Q, R, S) at -VCE = 6 V, -IC = 1 mA.
2 E passive Emitter of the PNP transistor; -VEBO max 6 V relative to base.
3 C passive Collector of the PNP transistor; -VCBO 60 V, -VCEO 50 V, -IC max 150 mA.

Key specifications

Parameter Value
Manufacturer CBI
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
DC Current Gain, Group Q hFE 120 270 at -VCE = 6 V, -IC = 1 mA 1
DC Current Gain, Group R hFE 180 390 at -VCE = 6 V, -IC = 1 mA 1
DC Current Gain, Group S hFE 270 560 at -VCE = 6 V, -IC = 1 mA 1
Collector Base Cutoff Current -ICBO 0.1 µA at -VCB = 60 V 1
Emitter Base Cutoff Current -IEBO 0.1 µA at -VEB = 6 V 1
Collector Base Breakdown Voltage -V(BR)CBO 60 V at -IC = 50 µA 1
Collector Emitter Breakdown Voltage -V(BR)CEO 50 V at -IC = 1 mA 1
Emitter Base Breakdown Voltage -V(BR)EBO 6 V at -IE = 50 µA 1
Collector Emitter Saturation Voltage VCE(sat) 0.5 V at -IC = 50 mA, -IB = 5 mA 1
Collector Output Capacitance Cob 5 pF at -VCB = 12 V, f = 1 MHz 1
Collector Base Voltage -VCBO 60 V 1
Collector Emitter Voltage -VCEO 50 V 1
Emitter Base Voltage -VEBO 6 V 1
Collector Current -IC 150 mA 1
Power Dissipation Ptot 200 mW 1
Junction Temperature Tj 150 °C 1
Storage Temperature Range Tstg -55 150 °C 1

CAD (KiCad official)

  • Symbol: MMBTSA1576W
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: mmbtsa1576w-etched.step / mmbtsa1576w-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbtsa1576w.step / mmbtsa1576w.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: CBI datasheet (2 pp, sha256 b6b7e539c5c55fe4, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF