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MMBTSA1504G
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ST(Semtech) Bipolar (BJT), TO-236. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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MMBTSA1504G
ST(Semtech) · Bipolar (BJT) · TO-236
MMBTSA1504G from ST(Semtech), in a TO-236. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the PNP transistor; -VEBO max 5 V and base current -IB max 30 mA. |
| 2 | E | passive | Emitter of the PNP transistor; -VEBO max 5 V relative to base. |
| 3 | C | passive | Collector of the PNP transistor; -VCBO 50 V, -VCEO 50 V, -IC max 150 mA, Ptot 200 mW. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ST(Semtech) |
| Package | TO-236 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC Current Gain (group G) | hFE | 200 | 400 | -VCE = 6 V, -IC = 2 mA | 1 | ||
| Collector Base Cutoff Current | -ICBO | 100 | nA | -VCB = 50 V | 1 | ||
| Emitter Base Cutoff Current | -IEBO | 100 | nA | -VEB = 5 V | 1 | ||
| Collector Emitter Saturation Voltage | -VCE(sat) | 0.3 | V | -IC = 100 mA, -IB = 10 mA | 1 | ||
| Transition Frequency | fT | 80 | MHz | -VCE = 10 V, -IC = 1 mA | 1 | ||
| Collector Output Capacitance | Cob | 7 | pF | -VCB = 10 V, f = 1 MHz | 1 | ||
| Collector Base Voltage | -VCBO | 50 | V | Ta = 25 °C | 1 | ||
| Collector Emitter Voltage | -VCEO | 50 | V | Ta = 25 °C | 1 | ||
| Emitter Base Voltage | -VEBO | 5 | V | Ta = 25 °C | 1 | ||
| Collector Current | -IC | 150 | mA | Ta = 25 °C | 1 | ||
| Base Current | -IB | 30 | mA | Ta = 25 °C | 1 | ||
| Power Dissipation | Ptot | 200 | mW | Ta = 25 °C | 1 | ||
| Junction Temperature | Tj | 150 | °C | Ta = 25 °C | 1 | ||
| Storage Temperature Range | Tstg | -55 | 150 | °C | Ta = 25 °C | 1 |
CAD (KiCad official)
- Symbol:
MMBTSA1504G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: TO-236 (KiCad packages3D, STEP)
- 3D model files:
mmbtsa1504g-etched.step/mmbtsa1504g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmbtsa1504g.step/mmbtsa1504g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ST(Semtech) datasheet (2 pp, sha256
3866d0a74747e8e3, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MMBTSA1504G
**ST(Semtech)** · Bipolar (BJT) · TO-236
MMBTSA1504G from ST(Semtech), in a TO-236. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the PNP transistor; -VEBO max 5 V and base current -IB max 30 mA. |
| 2 | E | passive | Emitter of the PNP transistor; -VEBO max 5 V relative to base. |
| 3 | C | passive | Collector of the PNP transistor; -VCBO 50 V, -VCEO 50 V, -IC max 150 mA, Ptot 200 mW. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ST(Semtech) |
| Package | TO-236 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC Current Gain (group G) | hFE | 200 | | 400 | | -VCE = 6 V, -IC = 2 mA | 1 |
| Collector Base Cutoff Current | -ICBO | | | 100 | nA | -VCB = 50 V | 1 |
| Emitter Base Cutoff Current | -IEBO | | | 100 | nA | -VEB = 5 V | 1 |
| Collector Emitter Saturation Voltage | -VCE(sat) | | | 0.3 | V | -IC = 100 mA, -IB = 10 mA | 1 |
| Transition Frequency | fT | 80 | | | MHz | -VCE = 10 V, -IC = 1 mA | 1 |
| Collector Output Capacitance | Cob | | | 7 | pF | -VCB = 10 V, f = 1 MHz | 1 |
| Collector Base Voltage | -VCBO | | | 50 | V | Ta = 25 °C | 1 |
| Collector Emitter Voltage | -VCEO | | | 50 | V | Ta = 25 °C | 1 |
| Emitter Base Voltage | -VEBO | | | 5 | V | Ta = 25 °C | 1 |
| Collector Current | -IC | | | 150 | mA | Ta = 25 °C | 1 |
| Base Current | -IB | | | 30 | mA | Ta = 25 °C | 1 |
| Power Dissipation | Ptot | | | 200 | mW | Ta = 25 °C | 1 |
| Junction Temperature | Tj | | | 150 | °C | Ta = 25 °C | 1 |
| Storage Temperature Range | Tstg | -55 | | 150 | °C | Ta = 25 °C | 1 |
## CAD (KiCad official)
- Symbol: `MMBTSA1504G`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: TO-236 (KiCad packages3D, STEP)
- 3D model files: `mmbtsa1504g-etched.step` / `mmbtsa1504g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mmbtsa1504g.step` / `mmbtsa1504g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [ST(Semtech) datasheet](docs/mmbtsa1504g-datasheet.pdf) (2 pp, sha256 `3866d0a74747e8e3`, retrieved 2026-10-22, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/mmbtsa1504g-datasheet.pdf)