component
MMBTH81
Public Made by Adomby adom
onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
mmbth81: specified limits as data (metadata.characteristics, 19 rows from the datasheet)
2 files changed
+262−1
README.md+26@@ -21,6 +21,32 @@ MMBTH81 from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Collector-Emitter Voltage | VCEO | | | 20 | V | | 2 |+| Collector-Base Voltage | VCBO | | | 20 | V | | 2 |+| Emitter-Base Voltage | VEBO | | | 3 | V | | 2 |+| Collector Current - Continuous | IC | | | 50 | mA | | 2 |+| Operating and Storage Junction Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 2 |+| Total Device Dissipation | PD | | | 225 | mW | TA = 25°C; device mounted on FR-4 PCB 1.6" X 1.6" X 0.06" | 2 |+| Thermal Resistance, Junction to Ambient | RθJA | | | 556 | °C/W | Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06" | 2 |+| Thermal Resistance, Junction to Case | RθJC | | | 125 | °C/W | | 2 |+| Collector-Emitter Breakdown Voltage | V(BR)CEO | 20 | | | V | IC = 1.0 mA, IB = 0 | 3 |+| Collector-Base Breakdown Voltage | V(BR)CBO | 20 | | | V | IC = 10 µA, IE = 0 | 3 |+| Emitter-Base Breakdown Voltage | V(BR)EBO | 3 | | | V | IE = 10 µA, IC = 0 | 3 |+| Collector Cutoff Current | ICBO | | | 100 | nA | VCB = 10 V, IE = 0 | 3 |+| Emitter Cutoff Current | IEBO | | | 100 | nA | VEB = 2.0 V, IC = 0 | 3 |+| DC Current Gain | hFE | 60 | | | | IC = 5.0 mA, VCE = 10 V | 3 |+| Collector-Emitter Saturation Voltage | VCE(sat) | | | 0.5 | V | IC = 5.0 mA, IB = 0.5 mA | 3 |+| Base-Emitter On Voltage | VBE(on) | | | 0.9 | V | IC = 5.0 mA, VCE = 10 V | 3 |+| Current Gain - Bandwidth Product | fT | 600 | | | MHz | IC = 5.0 mA, VCE = 10 V, f = 100 MHz | 3 |+| Collector-Base Capacitance | Ccb | | | 0.85 | pF | VCB = 10 V, IE = 0, f = 1.0 MHz | 3 |+| Collector Emitter Capacitance | Cce | | | 0.65 | pF | VCB = 10 V, IB = 0, f = 1.0 MHz | 3 |+ ## CAD (KiCad official) - Symbol: `MMBTH81`
page.json+236−1@@ -150,6 +150,241 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "6401dce6c10b9144",+ "rows": [+ {+ "name": "Collector-Emitter Voltage",+ "symbol": "VCEO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-Base Voltage",+ "symbol": "VCBO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Emitter-Base Voltage",+ "symbol": "VEBO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 3,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector Current - Continuous",+ "symbol": "IC",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Operating and Storage Junction Temperature Range",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Device Dissipation",+ "symbol": "PD",+ "kind": "thermal",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 225,+ "conditions": "TA = 25°C; device mounted on FR-4 PCB 1.6\" X 1.6\" X 0.06\"",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction to Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 556,+ "conditions": "Device mounted on FR-4 PCB 1.6\" X 1.6\" X 0.06\"",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction to Case",+ "symbol": "RθJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 125,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter Breakdown Voltage",+ "symbol": "V(BR)CEO",+ "kind": "electrical",+ "unit": "V",+ "min": 20,+ "typ": null,+ "max": null,+ "conditions": "IC = 1.0 mA, IB = 0",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Collector-Base Breakdown Voltage",+ "symbol": "V(BR)CBO",+ "kind": "electrical",+ "unit": "V",+ "min": 20,+ "typ": null,+ "max": null,+ "conditions": "IC = 10 µA, IE = 0",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Emitter-Base Breakdown Voltage",+ "symbol": "V(BR)EBO",+ "kind": "electrical",+ "unit": "V",+ "min": 3,+ "typ": null,+ "max": null,+ "conditions": "IE = 10 µA, IC = 0",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Collector Cutoff Current",+ "symbol": "ICBO",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VCB = 10 V, IE = 0",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Emitter Cutoff Current",+ "symbol": "IEBO",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VEB = 2.0 V, IC = 0",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "DC Current Gain",+ "symbol": "hFE",+ "kind": "electrical",+ "unit": "",+ "min": 60,+ "typ": null,+ "max": null,+ "conditions": "IC = 5.0 mA, VCE = 10 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter Saturation Voltage",+ "symbol": "VCE(sat)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 0.5,+ "conditions": "IC = 5.0 mA, IB = 0.5 mA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Base-Emitter On Voltage",+ "symbol": "VBE(on)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 0.9,+ "conditions": "IC = 5.0 mA, VCE = 10 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Current Gain - Bandwidth Product",+ "symbol": "fT",+ "kind": "electrical",+ "unit": "MHz",+ "min": 600,+ "typ": null,+ "max": null,+ "conditions": "IC = 5.0 mA, VCE = 10 V, f = 100 MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Collector-Base Capacitance",+ "symbol": "Ccb",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": null,+ "max": 0.85,+ "conditions": "VCB = 10 V, IE = 0, f = 1.0 MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Collector Emitter Capacitance",+ "symbol": "Cce",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": null,+ "max": 0.65,+ "conditions": "VCB = 10 V, IB = 0, f = 1.0 MHz",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -191,4 +426,4 @@ "visibility": { "public": true }-}+}