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MMBTH10LT1G

onsemi · Bipolar (BJT) · SOT-23

MMBTH10LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input NPN transistor base terminal, with emitter-base breakdown V(BR)EBO of at least 3.0 Vdc at IE = 10 µA and a maximum emitter-base voltage rating VEBO of 3.0 Vdc.
2 EMITTER passive NPN transistor emitter terminal, rated for a maximum emitter-base voltage VEBO of 3.0 Vdc.
3 COLLECTOR passive NPN transistor collector terminal, rated for a maximum collector-emitter voltage VCEO of 25 Vdc and collector-base voltage VCBO of 30 Vdc.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: MMBTH10LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbth10lt1g-etched.step / mmbth10lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbth10lt1g.step / mmbth10lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (6 pp, sha256 31461d7e693f3ff5, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF