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MMBTA94T

Public Made by Adom

by adom

Foshan Blue Rocket Elec Bipolar Transistors - BJT, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMBTA94T

Foshan Blue Rocket Elec · Bipolar Transistors - BJT · SOT-89

MMBTA94T from Foshan Blue Rocket Elec, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base input Base of the PNP transistor; Emitter to Base voltage VEBO max -5.0 V and IEBO max -0.1 μA at VEB=-4.0V.
2 Collector passive Collector of the PNP transistor; VCBO and VCEO are -400 V, continuous collector current IC is -300 mA.
3 Emitter passive Emitter of the PNP transistor; collector power dissipation is 500 mW and junction temperature is 150 ℃.

Key specifications

Parameter Value
Manufacturer Foshan Blue Rocket Elec
Package SOT-89
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector to Base Voltage VCBO -400 V Ta=25℃ 2
Collector to Emitter Voltage VCEO -400 V Ta=25℃ 2
Emitter to Base Voltage VEBO -5 V Ta=25℃ 2
Collector Current - Continuous IC -300 mA Ta=25℃ 2
Collector Power Dissipation PC 500 mW Ta=25℃ 2
Junction Temperature Tj 150 ℃ Ta=25℃ 2
Storage Temperature Range Tstg -55 150 ℃ Ta=25℃ 2
Collector to Base Breakdown Voltage VCBO -400 V IC=-100μA IE=0 2
Collector to Emitter Breakdown Voltage VCEO -400 V IC=-1.0mA IB=0 2
Emitter to Base Breakdown Voltage VEBO -5 V IE=-100μA IC=0 2
Collector Cut-Off Current ICBO -0.1 μA VCB=-300V IE=0 2
Emitter Cut-Off Current ICEO -5 μA VCE=-400V IE=0 2
Emitter Base Cut-Off Current IEBO -0.1 μA VEB=-4.0V IC=0 2
DC Current Gain (1) hFE(1) 80 300 VCE=-10V IC=-10mA 2
DC Current Gain (2) hFE(2) 70 VCE=-10V IC=-1.0mA 2
DC Current Gain (3) hFE(3) 40 VCE=-10V IC=-100mA 2
Collector to Emitter Saturation Voltage (1) VCE(sat) -0.2 V IC=-10mA IB=-1.0mA 2
Collector to Emitter Saturation Voltage (2) VCE(sat) -0.3 V IC=-50mA IB=-5.0mA 2
Emitter to Base Saturation Voltage VBE(sat) -0.75 V IC=-10mA IB=-1.0mA 2
Transition Frequency fT 50 MHz VCE=-5.0V IC=-10mA f=30MHz 2

CAD (KiCad official)

  • Symbol: MMBTA94T
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: mmbta94t-etched.step / mmbta94t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbta94t.step / mmbta94t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Foshan Blue Rocket Elec datasheet (6 pp, sha256 965670b1f466dc74, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF