# MMBTA92

**hongjiacheng** · Bipolar (BJT) · SOT-23

MMBTA92 from hongjiacheng, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | passive | Base terminal of the PNP transistor; the emitter-base voltage limit is VEBO -5.0 V, and the emitter-base cut-off current is max -100 nA at VEB = -5.0 V. |
| 2 | E | passive | Emitter terminal of the PNP transistor; the emitter-base breakdown voltage V(BR)EBO is -5.0 V minimum at IE = -100 µA. |
| 3 | C | passive | Collector terminal of the PNP transistor; the maximum ratings are VCBO -300 V, VCEO -300 V, IC -0.5 A, and collector power dissipation PC 350 mW. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | hongjiacheng |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | V(BR)CBO | -300 |  |  | V | IC=-100μA, IE=0 | 1 |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -300 |  |  | V | IC=-1.0mA, IB=0 | 1 |
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 |  |  | V | IE=-100μA, IC=0 | 1 |
| Collector-Base cut-off current | ICBO |  |  | -250 | nA | VCB= -200V, IE=0 | 1 |
| Emitter-Base cut-off current | IEBO |  |  | -100 | nA | VEB= -5.0V, IC=0 | 1 |
| DC Current Gain hFE(1) | hFE(1) | 60 |  |  |  | IC= -1.0mA VCE= -10V | 1 |
| DC Current Gain hFE(2) | hFE(2) | 100 |  | 300 |  | IC= -10mA VCE= -10V | 1 |
| DC Current Gain hFE(3) | hFE(3) | 60 |  |  |  | IC= -30mA VCE= -10V | 1 |
| Collector-Emitter Saturation Voltage | VCE(sat) |  |  | -0.2 | V | IC= -20mA, IB= -2.0mA | 1 |
| Base-Emitter Saturation Voltage | VBE(sat) |  |  | -0.9 | V | IC= -20mA, IB= -2.0mA | 1 |
| Transition frequency | fT | 50 |  |  | MHz | IC= -10mA, VCE= -20V, f=30MHz | 2 |
| Collector-Base Voltage | VCBO | -300 |  |  | V |  | 1 |
| Collector-Emitter Voltage | VCEO | -300 |  |  | V |  | 1 |
| Emitter-Base Voltage | VEBO | -5 |  |  | V |  | 1 |
| Collector Current | IC | -0.5 |  |  | A |  | 1 |
| Collector Power Dissipation | PC |  |  | 350 | mW |  | 1 |
| Storage temperature | Tstg | -55 |  | 150 | ℃ |  | 1 |
| Junction temperature | Tj | -55 |  | 150 | ℃ |  | 1 |
| Typical Thermal Resistance junction-to-ambient | RθJ-A |  | 417 |  | ℃/W |  | 1 |

## CAD (KiCad official)

- Symbol: `MMBTA92`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `mmbta92-etched.step` / `mmbta92-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mmbta92.step` / `mmbta92.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [hongjiacheng datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755885256144760832) (3 pp, sha256 `527d2d82fc79b1a9`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mmbta92-datasheet.pdf)