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Ray mmbta92-ms: specified limits as data (metadata.characteristics, 20 rows from the datasheet) 1145533 24d ago

MMBTA92-MS

MSKSEMI · Bipolar (BJT) · SOT-23

MMBTA92-MS from MSKSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the PNP high-voltage transistor (MMBTA92-MS), listed as pin 1 in the SOT-23 pinout.
2 EMITTER passive Emitter terminal of the PNP high-voltage transistor (MMBTA92-MS), listed as pin 2 in the SOT-23 pinout.
3 COLLECTOR passive Collector terminal of the PNP high-voltage transistor (MMBTA92-MS), listed as pin 3 in the SOT-23 pinout; the datasheet's maximum collector current is -200 mA continuous and -500 mA pulsed.

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO -300 V 2
Collector-emitter voltage VCEO -300 V 2
Emitter-base voltage VEBO -5 V 2
Collector current, continuous IC -200 mA 2
Collector current, pulsed ICM -500 mA 2
Collector power dissipation PC 300 mW 2
Junction temperature Tj 150 ℃ 2
Storage temperature Tstg -55 150 ℃ 2
Thermal resistance, junction to ambient RӨJA 417 ℃/W 2
Collector-base breakdown voltage V(BR)CBO -300 V IC= -100μA, IE=0 2
Collector-emitter breakdown voltage V(BR)CEO -300 V IC= -1mA, IB=0 2
Emitter-base breakdown voltage V(BR)EBO -5 V IE= -100μA, IC=0 2
Collector cut-off current ICBO -0.25 μA VCB=-200V, IE=0 2
Emitter cut-off current IEBO -0.1 μA VEB= -5V, IC=0 2
DC current gain hFE(1) hFE(1) 60 VCE= -10V, IC= -1mA 2
DC current gain hFE(2) hFE(2) 100 200 VCE= -10V, IC=-10mA 2
DC current gain hFE(3) hFE(3) 60 VCE= -10V, IC=-30mA 2
Collector-emitter saturation voltage VCE(sat) -0.2 V IC=-20mA, IB= -2mA 2
Base-emitter saturation voltage VBE(sat) -0.9 V IC= -20mA, IB= -2mA 2
Transition frequency fT 50 MHz VCE=-20V, IC= -10mA, f=30MHz 2

CAD (KiCad official)

  • Symbol: MMBTA92-MS
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbta92-ms-etched.step / mmbta92-ms-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbta92-ms.step / mmbta92-ms.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (5 pp, sha256 2b7a20d77d22972d, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF