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MMBTA56Q-13-F

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Diodes Incorporated Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMBTA56Q-13-F

Diodes Incorporated · Bipolar (BJT) · SOT-23

MMBTA56Q-13-F from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the PNP transistor; the datasheet gives VEBO of -4.0 V and a continuous collector current of -500 mA.
2 E passive Emitter of the PNP transistor; the datasheet gives VEBO of -4.0 V relative to the base.
3 C passive Collector of the PNP transistor; the datasheet gives VCEO of -60 V (MMBTA55) or -80 V (MMBTA56) and IC of -500 mA continuous.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage (MMBTA56) VCEO -80 V 2
Collector-Base Voltage (MMBTA56) VCBO -80 V 2
Emitter-Base Voltage VEBO -4 V 2
Collector Current - Continuous IC -500 mA 2
Operating and Storage Temperature Range TJ,TSTG -55 150 °C 2
Electrostatic Discharge - Human Body Model (JEDEC class 3A) ESD HBM 4000 V JESD22-A114 2
Electrostatic Discharge - Machine Model (JEDEC class C) ESD MM 400 V JESD22-A115 2
Power Dissipation (minimum pad layout) PD 310 mW Note 5, minimum recommended pad layout, 1oz copper, single-sided FR4, still air 2
Power Dissipation (15 mm x 15 mm pad) PD 350 mW Note 6, 15 mm x 15 mm 1oz copper 2
Thermal Resistance, Junction to Ambient (minimum pad layout) RθJA 403 °C/W Note 5, minimum recommended pad layout, 1oz copper, single-sided FR4, still air 2
Thermal Resistance, Junction to Ambient (15 mm x 15 mm pad) RθJA 357 °C/W Note 6, 15 mm x 15 mm 1oz copper 2
Thermal Resistance, Junction to Leads RθJL 350 °C/W Note 7, junction to solder point at end of leads 2
Collector-Emitter Breakdown Voltage (MMBTA56) BVCEO -80 V IC = -1.0mA, IB = 0 4
Collector-Base Breakdown Voltage (MMBTA56) BVCBO -80 V IC = -100µA, IE = 0 4
Emitter-Base Breakdown Voltage BVEBO -5 -4 V IE = -100µA, IC = 0 4
Collector Cut-Off Current (MMBTA56) ICBO -100 nA VCB = -80V, IE = 0 4
DC Current Gain hFE 100 IC = -10mA, VCE = -1.0V; IC = -100mA, VCE = -1.0V 4
Collector-Emitter Saturation Voltage VCE(sat) -0.25 V IC = -100mA, IB = -10mA 4
Base-Emitter Saturation Voltage VBE(sat) -1.2 V IC = -100mA, VCE = -1.0V 4
Current Gain-Bandwidth Product fT 50 MHz VCE = -1.0V, IC = -100mA, f = 100MHz 4

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin  Terminals: Finish-Matte Tin Plated Leads. Solderable per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: MMBTA56Q-13-F
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbta56q-13-f-etched.step / mmbta56q-13-f-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbta56q-13-f.step / mmbta56q-13-f.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 8fc594a07927affc, retrieved 2026-10-21, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF