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MMBTA44-MS
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MSKSEMI Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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MMBTA44-MS
MSKSEMI · Bipolar (BJT) · SOT-23
MMBTA44-MS from MSKSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN transistor; the datasheet rates the emitter-base voltage (VEBO) at 6 V. |
| 2 | EMITTER | passive | Emitter terminal of the NPN transistor; the emitter-base breakdown voltage V(BR)EBO is 6 V and VEBO is rated 6 V. |
| 3 | COLLECTOR | passive | Collector terminal of the NPN transistor; the datasheet rates VCBO and VCEO at 400 V each and continuous collector current IC at 200 mA (300 mA pulsed). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | 400 | V | 2 | |||
| Collector-emitter voltage | VCEO | 400 | V | 2 | |||
| Emitter-base voltage | VEBO | 6 | V | 2 | |||
| Collector current-continuous | IC | 200 | mA | 2 | |||
| Collector current-pulsed | ICM | 300 | mA | 2 | |||
| Collector power dissipation | PC | 350 | mW | 2 | |||
| Junction temperature | Tj | 150 | ℃ | 2 | |||
| Storage temperature | Tstg | -55 | 150 | ℃ | 2 | ||
| Thermal resistance from junction to ambient | RΘJA | 357 | ℃/W | 2 | |||
| Collector-base breakdown voltage | V(BR)CBO | 400 | V | IC=100µA, IE=0 | 2 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 400 | V | IC=1mA, IB=0 | 2 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 6 | V | IE=10µA, IC=0 | 2 | ||
| Collector cut-off current | ICBO | 0.1 | µA | VCB=400V, IE=0 | 2 | ||
| Emitter cut-off current | IEBO | 0.1 | µA | VEB=4V, IC=0 | 2 | ||
| DC current gain | hFE(1) | 40 | VCE=10V, IC=1mA | 2 | |||
| DC current gain | hFE(2) | 50 | 200 | VCE=10V, IC=10mA | 2 | ||
| DC current gain | hFE(3) | 45 | VCE=10V, IC=50mA | 2 | |||
| Collector-emitter saturation voltage | VCE(sat)1 | 0.4 | V | IC=1mA, IB=0.1mA | 2 | ||
| Collector-emitter saturation voltage | VCE(sat)2 | 0.5 | V | IC=10mA, IB=1mA | 2 | ||
| Collector-emitter saturation voltage | VCE(sat)3 | 0.75 | V | IC=50mA, IB=5mA | 2 | ||
| Base-emitter saturation voltage | VBE(sat) | 0.75 | V | IC=10mA, IB=1mA | 2 | ||
| Collector output capacitance | Cob | 7 | pF | VCB=20V, IE=0, f=1MHz | 2 | ||
| Emitter input capacitance | Cib | 130 | pF | VEB=0.5V, IC=0, f=1MHz | 2 |
CAD (KiCad official)
- Symbol:
MMBTA44-MS - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
mmbta44-ms-etched.step/mmbta44-ms-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmbta44-ms.step/mmbta44-ms.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (5 pp, sha256
ec8491815351ca0e, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MMBTA44-MS
**MSKSEMI** · Bipolar (BJT) · SOT-23
MMBTA44-MS from MSKSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN transistor; the datasheet rates the emitter-base voltage (VEBO) at 6 V. |
| 2 | EMITTER | passive | Emitter terminal of the NPN transistor; the emitter-base breakdown voltage V(BR)EBO is 6 V and VEBO is rated 6 V. |
| 3 | COLLECTOR | passive | Collector terminal of the NPN transistor; the datasheet rates VCBO and VCEO at 400 V each and continuous collector current IC at 200 mA (300 mA pulsed). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | | | 400 | V | | 2 |
| Collector-emitter voltage | VCEO | | | 400 | V | | 2 |
| Emitter-base voltage | VEBO | | | 6 | V | | 2 |
| Collector current-continuous | IC | | | 200 | mA | | 2 |
| Collector current-pulsed | ICM | | | 300 | mA | | 2 |
| Collector power dissipation | PC | | | 350 | mW | | 2 |
| Junction temperature | Tj | | | 150 | ℃ | | 2 |
| Storage temperature | Tstg | -55 | | 150 | ℃ | | 2 |
| Thermal resistance from junction to ambient | RΘJA | | | 357 | ℃/W | | 2 |
| Collector-base breakdown voltage | V(BR)CBO | 400 | | | V | IC=100µA, IE=0 | 2 |
| Collector-emitter breakdown voltage | V(BR)CEO | 400 | | | V | IC=1mA, IB=0 | 2 |
| Emitter-base breakdown voltage | V(BR)EBO | 6 | | | V | IE=10µA, IC=0 | 2 |
| Collector cut-off current | ICBO | | | 0.1 | µA | VCB=400V, IE=0 | 2 |
| Emitter cut-off current | IEBO | | | 0.1 | µA | VEB=4V, IC=0 | 2 |
| DC current gain | hFE(1) | 40 | | | | VCE=10V, IC=1mA | 2 |
| DC current gain | hFE(2) | 50 | | 200 | | VCE=10V, IC=10mA | 2 |
| DC current gain | hFE(3) | 45 | | | | VCE=10V, IC=50mA | 2 |
| Collector-emitter saturation voltage | VCE(sat)1 | | | 0.4 | V | IC=1mA, IB=0.1mA | 2 |
| Collector-emitter saturation voltage | VCE(sat)2 | | | 0.5 | V | IC=10mA, IB=1mA | 2 |
| Collector-emitter saturation voltage | VCE(sat)3 | | | 0.75 | V | IC=50mA, IB=5mA | 2 |
| Base-emitter saturation voltage | VBE(sat) | | | 0.75 | V | IC=10mA, IB=1mA | 2 |
| Collector output capacitance | Cob | | | 7 | pF | VCB=20V, IE=0, f=1MHz | 2 |
| Emitter input capacitance | Cib | | | 130 | pF | VEB=0.5V, IC=0, f=1MHz | 2 |
## CAD (KiCad official)
- Symbol: `MMBTA44-MS`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `mmbta44-ms-etched.step` / `mmbta44-ms-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mmbta44-ms.step` / `mmbta44-ms.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [MSKSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590239926835830784) (5 pp, sha256 `ec8491815351ca0e`, retrieved 2026-10-20, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/mmbta44-ms-datasheet.pdf)