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Ray Publish 0.1.0 3d3f622 14d ago

MMBTA44-MS

MSKSEMI · Bipolar (BJT) · SOT-23

MMBTA44-MS from MSKSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the NPN transistor; the datasheet rates the emitter-base voltage (VEBO) at 6 V.
2 EMITTER passive Emitter terminal of the NPN transistor; the emitter-base breakdown voltage V(BR)EBO is 6 V and VEBO is rated 6 V.
3 COLLECTOR passive Collector terminal of the NPN transistor; the datasheet rates VCBO and VCEO at 400 V each and continuous collector current IC at 200 mA (300 mA pulsed).

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO 400 V 2
Collector-emitter voltage VCEO 400 V 2
Emitter-base voltage VEBO 6 V 2
Collector current-continuous IC 200 mA 2
Collector current-pulsed ICM 300 mA 2
Collector power dissipation PC 350 mW 2
Junction temperature Tj 150 ℃ 2
Storage temperature Tstg -55 150 ℃ 2
Thermal resistance from junction to ambient RΘJA 357 ℃/W 2
Collector-base breakdown voltage V(BR)CBO 400 V IC=100µA, IE=0 2
Collector-emitter breakdown voltage V(BR)CEO 400 V IC=1mA, IB=0 2
Emitter-base breakdown voltage V(BR)EBO 6 V IE=10µA, IC=0 2
Collector cut-off current ICBO 0.1 µA VCB=400V, IE=0 2
Emitter cut-off current IEBO 0.1 µA VEB=4V, IC=0 2
DC current gain hFE(1) 40 VCE=10V, IC=1mA 2
DC current gain hFE(2) 50 200 VCE=10V, IC=10mA 2
DC current gain hFE(3) 45 VCE=10V, IC=50mA 2
Collector-emitter saturation voltage VCE(sat)1 0.4 V IC=1mA, IB=0.1mA 2
Collector-emitter saturation voltage VCE(sat)2 0.5 V IC=10mA, IB=1mA 2
Collector-emitter saturation voltage VCE(sat)3 0.75 V IC=50mA, IB=5mA 2
Base-emitter saturation voltage VBE(sat) 0.75 V IC=10mA, IB=1mA 2
Collector output capacitance Cob 7 pF VCB=20V, IE=0, f=1MHz 2
Emitter input capacitance Cib 130 pF VEB=0.5V, IC=0, f=1MHz 2

CAD (KiCad official)

  • Symbol: MMBTA44-MS
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbta44-ms-etched.step / mmbta44-ms-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbta44-ms.step / mmbta44-ms.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (5 pp, sha256 ec8491815351ca0e, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF