component
MMBTA42Q
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Yangzhou Yangjie Elec Tech Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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MMBTA42Q
Yangzhou Yangjie Elec Tech · Bipolar (BJT) · SOT-23
MMBTA42Q from Yangzhou Yangjie Elec Tech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; the datasheet gives VEBO of 5 V maximum and a base-emitter saturation voltage of 1.0 V maximum at IC=20 mA, IB=2 mA. |
| 2 | E | passive | Emitter of the NPN transistor; the datasheet gives VEBO of 5 V maximum. |
| 3 | C | passive | Collector of the NPN transistor; the datasheet gives VCBO and VCEO of 300 V maximum and continuous IC of 500 mA maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 300 | V | Ta=25℃ (Maximum Ratings) | 1 | ||
| Collector-Emitter Voltage | VCEO | 300 | V | Ta=25℃ (Maximum Ratings) | 1 | ||
| Emitter-Base Voltage | VEBO | 5 | V | Ta=25℃ (Maximum Ratings) | 1 | ||
| Collector Current - Continuous | IC | 500 | mA | Ta=25℃ (Maximum Ratings) | 1 | ||
| Total Device Dissipation | PD | 350 | mW | Ta=25℃ (Maximum Ratings) | 1 | ||
| Junction Temperature | Tj | -55 | 150 | ℃ | 1 | ||
| Storage Temperature | TSTG | -55 | 150 | ℃ | 1 | ||
| Collector-base breakdown voltage | VCBO | 300 | V | IC= 100uA, IE=0 | 2 | ||
| Collector-emitter breakdown voltage | VCEO | 300 | V | IC= 1mA, IB=0 | 2 | ||
| Emitter-base breakdown voltage | VEBO | 5 | V | IE= 100uA, IC=0 | 2 | ||
| Collector-base cut-off current | ICBO | 0.5 | uA | VCB=200V, IE =0 | 2 | ||
| Emitter-base cut-off current | IEBO | 0.5 | uA | VEB=5 V, IC=0 | 2 | ||
| DC current gain | hFE | 25 | VCE= 10V, IC= 1mA | 2 | |||
| DC current gain | hFE | 40 | 300 | VCE= 10V, IC= 10mA | 2 | ||
| DC current gain | hFE | 40 | VCE=10V, IC=30mA | 2 | |||
| Collector-emitter saturation voltage | VCE(sat) | 0.5 | V | IC=20mA, IB= 2mA | 2 | ||
| Base-emitter saturation voltage | VBE(sat) | 1 | V | IC=20mA, IB= 2mA | 2 | ||
| Transition frequency | fT | 50 | MHz | VCE=20V,IC=10mA,f=30MHz | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | ● Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 | 1 |
CAD (KiCad official)
- Symbol:
MMBTA42Q - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
mmbta42q-etched.step/mmbta42q-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmbta42q.step/mmbta42q.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Yangzhou Yangjie Elec Tech datasheet (5 pp, sha256
8c4d9c5a6299d74b, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MMBTA42Q
**Yangzhou Yangjie Elec Tech** · Bipolar (BJT) · SOT-23
MMBTA42Q from Yangzhou Yangjie Elec Tech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; the datasheet gives VEBO of 5 V maximum and a base-emitter saturation voltage of 1.0 V maximum at IC=20 mA, IB=2 mA. |
| 2 | E | passive | Emitter of the NPN transistor; the datasheet gives VEBO of 5 V maximum. |
| 3 | C | passive | Collector of the NPN transistor; the datasheet gives VCBO and VCEO of 300 V maximum and continuous IC of 500 mA maximum. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | | | 300 | V | Ta=25℃ (Maximum Ratings) | 1 |
| Collector-Emitter Voltage | VCEO | | | 300 | V | Ta=25℃ (Maximum Ratings) | 1 |
| Emitter-Base Voltage | VEBO | | | 5 | V | Ta=25℃ (Maximum Ratings) | 1 |
| Collector Current - Continuous | IC | | | 500 | mA | Ta=25℃ (Maximum Ratings) | 1 |
| Total Device Dissipation | PD | | | 350 | mW | Ta=25℃ (Maximum Ratings) | 1 |
| Junction Temperature | Tj | -55 | | 150 | ℃ | | 1 |
| Storage Temperature | TSTG | -55 | | 150 | ℃ | | 1 |
| Collector-base breakdown voltage | VCBO | 300 | | | V | IC= 100uA, IE=0 | 2 |
| Collector-emitter breakdown voltage | VCEO | 300 | | | V | IC= 1mA, IB=0 | 2 |
| Emitter-base breakdown voltage | VEBO | 5 | | | V | IE= 100uA, IC=0 | 2 |
| Collector-base cut-off current | ICBO | | | 0.5 | uA | VCB=200V, IE =0 | 2 |
| Emitter-base cut-off current | IEBO | | | 0.5 | uA | VEB=5 V, IC=0 | 2 |
| DC current gain | hFE | 25 | | | | VCE= 10V, IC= 1mA | 2 |
| DC current gain | hFE | 40 | | 300 | | VCE= 10V, IC= 10mA | 2 |
| DC current gain | hFE | 40 | | | | VCE=10V, IC=30mA | 2 |
| Collector-emitter saturation voltage | VCE(sat) | | | 0.5 | V | IC=20mA, IB= 2mA | 2 |
| Base-emitter saturation voltage | VBE(sat) | | | 1 | V | IC=20mA, IB= 2mA | 2 |
| Transition frequency | fT | 50 | | | MHz | VCE=20V,IC=10mA,f=30MHz | 2 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | | tin | ● Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 | 1 |
## CAD (KiCad official)
- Symbol: `MMBTA42Q`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `mmbta42q-etched.step` / `mmbta42q-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mmbta42q.step` / `mmbta42q.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Yangzhou Yangjie Elec Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603373280254304256) (5 pp, sha256 `8c4d9c5a6299d74b`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/mmbta42q-datasheet.pdf)