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MMBTA13-7-F

Public Made by Adom

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Diodes Incorporated Darlington Transistors, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

Schematic Symbol

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PCB Footprint

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Datasheet

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Contents

README

markdown

MMBTA13-7-F

Diodes Incorporated · Darlington Transistors · SOT-23

MMBTA13-7-F from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN Darlington transistor; drive input, with VEBO limited to 10 V maximum.
2 E passive Emitter of the NPN Darlington transistor; current return path, with collector current IC up to 300 mA.
3 C passive Collector of the NPN Darlington transistor; VCEO and VCBO are rated 30 V maximum and IC 300 mA maximum.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 30 V 2
Collector-Emitter Voltage VCEO 30 V 2
Emitter-Base Voltage VEBO 10 V 2
Collector Current IC 300 mA 2
Electrostatic Discharge - Human Body Model ESD HBM 4000 V JEDEC Class 3A 2
Electrostatic Discharge - Machine Model ESD MM 400 V JEDEC Class C 2
Electrostatic Discharge - Charged Device Model ESD CDM 1000 V JEDEC Class IV 2
Collector Power Dissipation PD 300 mW @TA = +25°C; Note 5 (min recommended pad layout, 1oz copper, single-sided FR-4, still air) 2
Thermal Resistance, Junction to Ambient RθJA 417 °C/W @TA = +25°C; Note 5 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Collector-Emitter Breakdown Voltage BVCEO 30 V IC = 100µA, VBE = 0V 2
Collector Cutoff Current ICBO 100 nA VCB = 30V, IE = 0 2
Emitter Cutoff Current IEBO 100 nA VEB = 10V, IC = 0 2
DC Current Gain (MMBTA13) hFE 5000 IC = 10mA, VCE = 5.0V 2
DC Current Gain (MMBTA13) hFE 10000 IC = 100mA, VCE = 5.0V 2
Collector-Emitter Saturation Voltage VCE(sat) 1.5 V IC = 100mA, IB = 100µA 2
Base-Emitter Saturation Voltage VBE(sat) 2 V IC = 100mA, VCE = 5.0V 2
Transition Frequency fT 125 MHz VCE = 5.0V, IC = 10mA, f = 100MHz 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin • Terminals: Matte Tin Finish; Solderable per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: MMBTA13-7-F
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbta13-7-f-etched.step / mmbta13-7-f-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbta13-7-f.step / mmbta13-7-f.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (5 pp, sha256 288ed22fcedf288c, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF