component
MMBTA06WT1G-HXY
Public Made by Adomby adom
HXY MOSFET Bipolar (BJT), SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMMBTA06WT1G-HXY
HXY MOSFET · Bipolar (BJT) · SOT-323
MMBTA06WT1G-HXY from HXY MOSFET, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; drives the device, with VEBO limited to 6 V and IEBO max 50 nA at VEB=4V. |
| 2 | E | passive | Emitter of the NPN transistor; V(BR)EBO min 6 V relative to base. |
| 3 | C | passive | Collector of the NPN transistor; VCEO 160 V, VCBO 180 V, continuous IC 600 mA maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 180 | V | IC=100µA, IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 160 | V | IC=1mA, IB=0 (pulse test) | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 6 | V | IE=10µA, IC=0 | 1 | ||
| Collector cut-off current | ICBO | 50 | nA | VCB=120V, IE=0 | 1 | ||
| Emitter cut-off current | IEBO | 50 | nA | VEB=4V, IC=0 | 1 | ||
| DC current gain | hFE | 80 | VCE=5V, IC=1mA | 1 | |||
| DC current gain | hFE | 100 | 300 | VCE=5V, IC=10mA | 1 | ||
| DC current gain | hFE | 30 | VCE=5V, IC=50mA | 1 | |||
| Collector-emitter saturation voltage | VCE(sat) | 0.2 | V | IC=50mA, IB=5mA | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | 0.15 | V | IC=10mA, IB=1mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | 1 | V | IC=50mA, IB=5mA | 1 | ||
| Transition frequency | fT | 100 | 300 | MHz | VCE=10V, IC=10mA, f=100MHz | 1 | |
| Collector output capacitance | Cob | 6 | pF | VCB=10V, IE=0, f=1MHz | 1 | ||
| Collector-base voltage | VCBO | 180 | V | Ta=25°C | 1 | ||
| Collector-emitter voltage | VCEO | 160 | V | Ta=25°C | 1 | ||
| Emitter-base voltage | VEBO | 6 | V | Ta=25°C | 1 | ||
| Collector current - continuous | IC | 600 | mA | Ta=25°C | 1 | ||
| Collector power dissipation | PC | 200 | mW | Ta=25°C | 1 | ||
| Storage temperature range | Tstg | -55 | 150 | °C | 1 | ||
| Thermal resistance, junction to ambient | RθJA | 625 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
MMBTA06WT1G-HXY - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
mmbta06wt1g-hxy-etched.step/mmbta06wt1g-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmbta06wt1g-hxy.step/mmbta06wt1g-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
d94f6b76721efead, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).