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Ray mmbta06w-r1-00001: specified limits as data (metadata.characteristics, 15 rows from the datasheet) bc309a1 17d ago

MMBTA06W_R1_00001

PANJIT International · Bipolar (BJT) · SOT-323

MMBTA06W_R1_00001 from PANJIT International, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor, drawn on the lower-left terminal in the top view; VEBO is 4 V max and V(BR)EBO is 4 V min.
2 E passive Emitter of the NPN transistor, drawn on the lower-right terminal in the top view; the emitter-base breakdown voltage V(BR)EBO is 4 V min.
3 C passive Collector of the NPN transistor, drawn on the single top terminal in the top view; the rating is 80 V VCEO with 500 mA continuous IC.

Key specifications

Parameter Value
Manufacturer PANJIT International
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage (as printed in ratings table) VCBO 80 V 1
Collector-Base Voltage (as printed in ratings table) VCEO 80 V 1
Emitter-Base Voltage VEBO 4 V 1
Collector Current-Continuous IC 500 mA 1
Maximum Power Dissipation PD 225 mW Note 1: FR4 PCB, single-sided copper, mini pad 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 oC 1
Typical Junction-to-Ambient Thermal Resistance RθJA 550 oC/W Note 1: FR4 PCB, single-sided copper, mini pad 1
Collector-Emitter Breakdown Voltage V(BR)CEO 80 V IC= 1mA, IB= 0 2
Collector-Base Breakdown Voltage V(BR)CBO 80 V IC= 100A, IE= 0 2
Emitter-Base Breakdown Voltage V(BR)EBO 4 V IE= 100A, IC= 0 2
Collector Cutoff Current ICBO 100 nA VCB= 80V, IE= 0 2
DC Current Gain hFE 100 VCE= 1V, IC= 10mA 2
Collector-Emitter Saturation Voltage VCE(SAT) 0.25 V IC=100mA, IB= 10mA 2
Base-Emitter Turn-on voltage VBE(on) 1.2 V IC=100mA, VCE= 1V 2
Current-Gain-Bandwidth Product fT 100 MHz IC=10mA, VCE= 2V, f=100MHz 2

CAD (KiCad official)

  • Symbol: MMBTA06W_R1_00001
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: mmbta06w-r1-00001-etched.step / mmbta06w-r1-00001-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbta06w-r1-00001.step / mmbta06w-r1-00001.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PANJIT International datasheet (6 pp, sha256 82661d6d0f96657a, retrieved 2026-10-10, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF