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MMBTA05LT3G

Public Made by Adom

by adom

onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMBTA05LT3G

onsemi · Bipolar (BJT) · SOT-23

MMBTA05LT3G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the NPN driver transistor (MMBTA05L/MMBTA06L); the datasheet gives no base-specific voltage or current limit, only the emitter-base breakdown of 4.0 Vdc minimum (V(BR)EBO, IE = 100 µAdc).
2 EMITTER passive Emitter terminal of the NPN driver transistor; the emitter-base voltage rating is VEBO = 4.0 Vdc and the continuous collector current limit is 500 mAdc.
3 COLLECTOR passive Collector terminal of the NPN driver transistor; rated VCEO = 60 Vdc for MMBTA05L (80 Vdc for MMBTA06L) and VCBO = 60 Vdc for MMBTA05L, with 500 mAdc continuous collector current.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector−Emitter Breakdown Voltage V(BR)CEO 60 Vdc IC = 1.0 mAdc, IB = 0 (MMBTA05L) 3
Emitter−Base Breakdown Voltage V(BR)EBO 4 Vdc IE = 100 Adc, IC = 0 3
Collector Cutoff Current ICES 0.1 Adc VCE = 60 Vdc, IB = 0 3
DC Current Gain hFE 100 IC = 10 mAdc, VCE = 1.0 Vdc 3
Collector−Emitter Saturation Voltage VCE(sat) 0.25 Vdc IC = 100 mAdc, IB = 10 mAdc 3
Base−Emitter On Voltage VBE(on) 1.2 Vdc IC = 100 mAdc, VCE = 1.0 Vdc 3
Current−Gain − Bandwidth Product fT 100 MHz IC = 10 mA, VCE = 2.0 V, f = 100 MHz 3
Collector−Emitter Voltage (MMBTA05L) VCEO 60 Vdc 2
Collector−Base Voltage (MMBTA05L) VCBO 60 Vdc 2
Emitter−Base Voltage VEBO 4 Vdc 2
Collector Current − Continuous IC 500 mAdc 2
Total Device Dissipation FR−5 Board PD 225 mW TA = 25°C, FR−5 Board (Note 1) 2
Total Device Dissipation Alumina Substrate PD 300 mW TA = 25°C, Alumina Substrate (Note 2) 2
Thermal Resistance, Junction−to−Ambient FR−5 Board RθJA 556 °C/W FR−5 Board (Note 1) 2
Thermal Resistance, Junction−to−Ambient Alumina Substrate RθJA 417 °C/W Alumina Substrate (Note 2) 2
Junction and Storage Temperature TJ, Tstg -55 150 °C 2
Derate above 25°C FR−5 Board 1.8 mW/°C Derate above 25°C, FR−5 Board 2
Derate above 25°C Alumina Substrate 2.4 mW/°C Derate above 25°C, Alumina Substrate 2

CAD (KiCad official)

  • Symbol: MMBTA05LT3G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbta05lt3g-etched.step / mmbta05lt3g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbta05lt3g.step / mmbta05lt3g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (8 pp, sha256 ff6cb2d890915fe5, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF