component

MMBT918LT1G

Public Made by Adom

by adom

onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMBT918LT1G

onsemi · Bipolar (BJT) · SOT-23

MMBT918LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the NPN VHF/UHF transistor; the datasheet rates the emitter-base voltage VEBO at 3.0 Vdc and the continuous collector current at 50 mAdc.
2 EMITTER passive Emitter terminal of the NPN transistor; the emitter-base breakdown voltage V(BR)EBO is specified with a minimum of 3.0 Vdc.
3 COLLECTOR passive Collector terminal of the NPN transistor; the datasheet rates the collector-emitter voltage VCEO at 15 Vdc and the collector-base voltage VCBO at 30 Vdc.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector−Emitter Voltage VCEO 15 Vdc 1
Collector−Base Voltage VCBO 30 Vdc 1
Emitter−Base Voltage VEBO 3 Vdc 1
Collector Current − Continuous IC 50 mAdc 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1
Total Device Dissipation FR−5 Board PD 225 mW TA = 25°C (Note 1) 1
Thermal Resistance, Junction−to−Ambient (FR−5 Board) RθJA 556 °C/W FR−5 Board (Note 1) 1
Total Device Dissipation Alumina Substrate PD 300 mW TA = 25°C (Note 2) 1
Thermal Resistance, Junction−to−Ambient (Alumina Substrate) RθJA 417 °C/W Alumina Substrate (Note 2) 1
Collector−Emitter Breakdown Voltage V(BR)CEO 15 Vdc IC = 3.0 mAdc, IB = 0 2
Collector−Base Breakdown Voltage V(BR)CBO 30 Vdc IC = 1.0 Adc, IE = 0 2
Emitter−Base Breakdown Voltage V(BR)EBO 3 Vdc IE = 10 Adc, IC = 0 2
Collector Cutoff Current ICBO 50 nAdc VCB = 15 Vdc, IE = 0 2
DC Current Gain hFE 20 IC = 3.0 mAdc, VCE = 1.0 Vdc 2
Collector−Emitter Saturation Voltage VCE(sat) 0.4 Vdc IC = 10 mAdc, IB = 1.0 mAdc 2
Base−Emitter Saturation Voltage VBE(sat) 1 Vdc IC = 10 mAdc, IB = 1.0 mAdc 2
Current−Gain − Bandwidth Product fT 600 MHz IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz 2
Output Capacitance Cobo 3 pF VCB = 0 Vdc, IE = 0, f = 1.0 MHz 2
Output Capacitance Cobo 1.7 pF VCB = 10 Vdc, IE = 0, f = 1.0 MHz 2
Input Capacitance Cibo 2 pF VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz 2
Noise Figure NF 6 dB IC = 1.0 mAdc, VCE = 6.0 Vdc, RS = 50, f = 60 MHz (Figure 1) 2
Power Output Pout 30 mW IC = 8.0 mAdc, VCB = 15 Vdc, f = 500 MHz 2
Common−Emitter Amplifier Power Gain Gpe 11 dB IC = 6.0 mAdc, VCB = 12 Vdc, f = 200 MHz 2

CAD (KiCad official)

  • Symbol: MMBT918LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt918lt1g-etched.step / mmbt918lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt918lt1g.step / mmbt918lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (4 pp, sha256 4896aa21505de0a5, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF