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Ray Publish 0.1.0 e3c9bbe 17d ago

MMBT9015C

PJSEMI · Bipolar (BJT) · SOT-23

MMBT9015C from PJSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base input Base terminal of the PNP transistor, where the emitter-base voltage is limited to -VEBO 5 V maximum and the emitter-base breakdown voltage is 5 V minimum at -IE = 100 μA.
2 Emitter passive Emitter terminal of the PNP transistor, with the absolute maximum emitter-base voltage rated at -VEBO 5 V.
3 Collector passive Collector terminal of the PNP transistor, rated for a maximum collector current of -IC 100 mA and a collector-emitter voltage of -VCEO 45 V.

Key specifications

Parameter Value
Manufacturer PJSEMI
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
DC current gain, Current Gain Group B HFE 110 220 at -VCE = 5 V, -IC = 1 mA 1
DC current gain, Current Gain Group C HFE 200 450 at -VCE = 5 V, -IC = 1 mA 1
DC current gain, Current Gain Group D HFE 420 800 at -VCE = 5 V, -IC = 1 mA 1
Collector Base Cutoff Current -ICBO 50 nA at -VCB = 50 V 1
Emitter Base Cutoff Current -IEBO 50 nA at -VEB = 5 V 1
Collector Base Breakdown Voltage -V(BR)CBO 50 V at -IC = 100 μA 1
Collector Emitter Breakdown Voltage -V(BR)CEO 45 V at -IC = 1 mA 1
Emitter Base Breakdown Voltage -V(BR)EBO 5 V at -IE = 100 μA 1
Collector Emitter Saturation Voltage VCE(sat) 0.65 V at -IC = 100 mA, -IB = 5 mA 1
Base Emitter Saturation Voltage VBE(sat) 1 V at -IC = 100 mA, -IB = 5 mA 1
Transition Frequency FT 100 MHz at -VCE = 5 V, -IC = 10 mA 1
Collector Base Capacitance Cob 7 pF at -VCB = 10 V, f = 1 MHz 1
Collector Base Voltage -VCBO 50 V 1
Collector Emitter Voltage -VCEO 45 V 1
Emitter Base Voltage -VEBO 5 V 1
Collector Current -IC 100 mA 1
Power Dissipation PD 200 mW 1
Junction Temperature TJ 150 ℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1

CAD (KiCad official)

  • Symbol: MMBT9015C
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt9015c-etched.step / mmbt9015c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt9015c.step / mmbt9015c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PJSEMI datasheet (3 pp, sha256 6f86f9ee028aa0d8, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF