# MMBT7002

**ST Semtech** · MOSFETs · SOT-23

MMBT7002 from ST Semtech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the N-channel enhancement MOSFET, rated for a continuous gate-source voltage of ±20 V and a non-repetitive ±40 V (tp < 50 µs). |
| 2 | Source | passive | Source of the N-channel enhancement MOSFET; the datasheet gives no pin-specific limit, with the device drain-source voltage rated at 60 V. |
| 3 | Drain | passive | Drain of the N-channel enhancement MOSFET, rated for a drain-source voltage (VDSS) of 60 V and a continuous drain current of 115 mA (pulsed 800 mA). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | ST Semtech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain Source Breakdown Voltage | BVDSS | 60 |  |  | V | at ID = 10 µA | 1 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | at VDS = 60 V | 1 |
| Gate-Body Leakage Current | ±IGSS |  |  | 100 | nA | at VGS = ± 20 V | 1 |
| Gate Threshold Voltage | VGS(th) | 1 |  | 2.5 | V | at VDS = VGS, ID = 250 µA | 1 |
| On-State Drain Current | ID(ON) | 500 |  |  | mA | at VGS = 10 V, VDS = 7.5 V | 1 |
| Drain-Source On-Voltage | VDS(ON) |  |  | 3.75 | V | at VGS = 10 V, ID = 500 mA | 1 |
| Drain-Source On-Voltage | VDS(ON) |  |  | 1.5 | V | at VGS = 5 V, ID = 50 mA | 1 |
| Static Drain-Source On-Resistance | RDS(ON) |  |  | 7.5 | Ω | at VGS = 10 V, ID = 500 mA | 1 |
| Forward Transconductance | gFS | 80 |  |  | mS | at VDS = 10 V, ID = 200 mA | 1 |
| Input Capacitance | Ciss |  |  | 50 | pF | at VDS = 25 V, f = 1 MHz | 1 |
| Output Capacitance | Coss |  |  | 25 | pF | at VDS = 25 V, f = 1 MHz | 1 |
| Reverse Transfer Capacitance | Crss |  |  | 5 | pF | at VDS = 25 V, f = 1 MHz | 1 |
| Turn-On Time | ton |  |  | 20 | ns | at VDD = 30 V, RL = 150 Ω, ID = 0.2 A, VGS = 10 V, RGEN = 25 Ω | 1 |
| Turn-Off Time | toff |  |  | 20 | ns | at VDD = 30 V, RL = 150 Ω, ID = 0.2 A, VGS = 10 V, RGEN = 25 Ω | 1 |
| Drain-Source Voltage | VDSS |  |  | 60 | V | Ta = 25 °C | 1 |
| Drain-Gate Voltage | VDGR |  |  | 60 | V | RGS ≤ 1 MΩ | 1 |
| Gate-Source Voltage Continuous | VGSS | -20 |  | 20 | V | Continuous; printed as ± 20 V | 1 |
| Gate-Source Voltage Non-Repetitive | VGSS | -40 |  | 40 | V | Non-repetitive, tp < 50 µs; printed as ± 40 V | 1 |
| Maximum Drain Current Continuous | ID |  |  | 115 | mA | Continuous, Ta = 25 °C | 1 |
| Maximum Drain Current Pulsed | ID |  |  | 800 | mA | Pulsed | 1 |
| Total Power Dissipation | Ptot |  |  | 200 | mW | Ta = 25 °C | 1 |
| Operating and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |

## CAD (KiCad official)

- Symbol: `MMBT7002`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `mmbt7002-etched.step` / `mmbt7002-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mmbt7002.step` / `mmbt7002.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [ST Semtech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586181512957448192) (2 pp, sha256 `f2c03acf8fc903fd`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mmbt7002-datasheet.pdf)