component

MMBT589LT1G

Public Made by Adom

by adom

onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMBT589LT1G

onsemi · Bipolar (BJT) · SOT-23

MMBT589LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the PNP transistor; the datasheet gives an emitter-base voltage limit VEBO of -5.0 Vdc.
2 EMITTER passive Emitter terminal of the PNP transistor; the datasheet rates collector current at -1.0 Adc continuous and -2.0 A peak (ICM).
3 COLLECTOR passive Collector terminal of the PNP transistor; the datasheet rates collector-emitter voltage VCEO at -30 Vdc and collector-base voltage VCBO at -50 Vdc.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCEO -30 Vdc 1
Collector-Base Voltage VCBO -50 Vdc 1
Emitter-Base Voltage VEBO -5 Vdc 1
Collector Current - Continuous IC -1 Adc 1
Collector Current - Peak ICM -2 A 1
Total Device Dissipation PD 310 mW FR-5 Board (Note 1: FR-4 @ Minimum Pad), TA = 25°C 1
Total Device Dissipation PD 710 mW Alumina Substrate (Note 2: FR-4 @ 1.0 X 1.0 inch Pad), TA = 25°C 1
Total Device Dissipation (Single Pulse < 10 sec.) PDsingle 575 mW Single pulse < 10 sec., ref. Figure 8 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1
Thermal Resistance Junction-to-Ambient RJA 403 °C/W FR-5 Board (Note 1: FR-4 @ Minimum Pad) 1
Thermal Resistance Junction-to-Ambient RJA 176 °C/W Alumina Substrate (Note 2: FR-4 @ 1.0 X 1.0 inch Pad) 1
Collector-Emitter Breakdown Voltage V(BR)CEO -30 Vdc IC = −10 mAdc, IB = 0 2
Collector-Base Breakdown Voltage V(BR)CBO -50 Vdc IC = −0.1 mAdc, IE = 0 2
Emitter-Base Breakdown Voltage V(BR)EBO -5 Vdc IE = −0.1 mAdc, IC = 0 2
Collector Cutoff Current ICBO -0.1 Adc VCB = −30 Vdc, IE = 0 2
Collector-Emitter Cutoff Current ICES -0.1 Adc VCES = −30 Vdc 2
Emitter Cutoff Current IEBO -0.1 Adc VEB = −4.0 Vdc 2
DC Current Gain hFE 100 300 IC = −1.0 mA, VCE = −2.0 V 2
DC Current Gain hFE 100 IC = −500 mA, VCE = −2.0 V 2
DC Current Gain hFE 80 IC = −1.0 A, VCE = −2.0 V 2
DC Current Gain hFE 40 IC = 2.0 A, VCE = −2.0 V 2
Collector-Emitter Saturation Voltage VCE(sat) -0.25 V IC = −0.5 A, IB = −0.05 A 2
Collector-Emitter Saturation Voltage VCE(sat) -0.3 V IC = −1.0 A, IB = 0.1 A 2
Collector-Emitter Saturation Voltage VCE(sat) -0.65 V IC = −2.0 A, IB = −0.2 A 2
Base-Emitter Saturation Voltage VBE(sat) -1.2 V IC = −1.0 A, IB = −0.1 A 2
Base-Emitter Turn-on Voltage VBE(on) -1.1 V IC = −1.0 A, VCE = −2.0 V 2
Cutoff Frequency fT 100 MHz IC = −100 mA, VCE = −5.0 V, f = 100 MHz 2
Output Capacitance Cobo 15 pF f = 1.0 MHz 2

CAD (KiCad official)

  • Symbol: MMBT589LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt589lt1g-etched.step / mmbt589lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt589lt1g.step / mmbt589lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (6 pp, sha256 6b014ddf9b9456c1, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF