# MMBT5551DW

**Shikues** · Bipolar (BJT) · SOT-363

MMBT5551DW from Shikues, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E1 | passive | Emitter of transistor 1 (NPN); VEBO rating 6 V, V(BR)EBO min 6 V at IE=10uA. |
| 2 | B1 | passive | Base of transistor 1; base-emitter saturation voltage 0.7 V typ and 1 V max at IC=10mA, IB=1mA. |
| 3 | C2 | passive | Collector of transistor 2; VCEO 160 V, VCBO 180 V, continuous IC 600 mA. |
| 4 | E2 | passive | Emitter of transistor 2 (NPN); VEBO rating 6 V. |
| 5 | B2 | passive | Base of transistor 2; base-emitter saturation voltage 0.7 V typ and 1 V max at IC=10mA, IB=1mA. |
| 6 | C1 | passive | Collector of transistor 1; VCEO 160 V, VCBO 180 V, continuous IC 600 mA. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Shikues |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 180 |  |  | V | IC=100uA, IE=0 | 1 |
| Collector-emitter breakdown voltage | V(BR)CEO | 160 |  |  | V | IC=1mA, IB=0 | 1 |
| Emitter-base breakdown voltage | V(BR)EBO | 6 |  |  | V | IE=10uA, IC=0 | 1 |
| Collector cut-off current | ICBO |  |  | 0.1 | uA | VCB=120V, IE=0 | 1 |
| Emitter cut-off current | IEBO |  |  | 0.1 | uA | VEB=6V, IC=0 | 1 |
| Collector-emitter saturation voltage | VCE(sat) |  |  | 0.15 | V | IC=10mA, IB=1mA | 1 |
| Collector-emitter saturation voltage | VCE(sat) |  |  | 0.3 | V | IC=50mA, IB=5mA | 1 |
| Base-emitter saturation voltage | VBE(sat) |  |  | 1 | V | IC=10mA, IB=1mA | 1 |
| Collector output capacitance | Cob |  |  | 6 | pF | VCB=10V, IE=0, f=1MHz | 1 |
| Storage temperature | Tstg | -55 |  | 150 | ℃ |  | 1 |
| Junction temperature | Tj |  |  | 150 | ℃ |  | 1 |
| Thermal resistance junction to ambient | RθJA |  |  | 625 | ℃/W |  | 1 |

## CAD (KiCad official)

- Symbol: `MMBT5551DW`
- Footprint: `Package_TO_SOT_SMD:SOT-363_SC-70-6`
- 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files: `mmbt5551dw-etched.step` / `mmbt5551dw-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mmbt5551dw.step` / `mmbt5551dw.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Shikues datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757076230724030464) (3 pp, sha256 `d17f96e50f4df4a0`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mmbt5551dw-datasheet.pdf)