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MMBT5551-MS

Public Made by Adom

by adom

MSKSEMI Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMBT5551-MS

MSKSEMI · Bipolar (BJT) · SOT-23

MMBT5551-MS from MSKSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the NPN transistor; the datasheet states no pin-specific limit, only the device-level emitter-base voltage VEBO of 6 V.
2 EMITTER passive Emitter terminal of the NPN transistor; the datasheet gives device-level limits only, including emitter-base voltage VEBO of 6 V and maximum collector current IC of 600 mA.
3 COLLECTOR passive Collector terminal of the NPN transistor; the datasheet gives device-level limits only, including collector-emitter voltage VCEO of 160 V, collector-base voltage VCBO of 180 V, and collector current IC of 600 mA.

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO 180 V 2
Collector-emitter voltage VCEO 160 V 2
Emitter-base voltage VEBO 6 V 2
Collector current IC 600 mA 2
Collector power dissipation PC 300 mW 2
Junction temperature Tj 150 ℃ 2
Storage temperature Tstg -55 150 ℃ 2
Collector-base breakdown voltage V(BR)CBO 180 V IC=100µA, IE=0 2
Collector-emitter breakdown voltage V(BR)CEO 160 V IC=1mA, IB=0 2
Emitter-base breakdown voltage V(BR)EBO 6 V IE=10µA, IC=0 2
Collector cut-off current ICBO 50 nA VCB=120V, IE=0 2
Emitter cut-off current IEBO 50 nA VEB=4V, IC=0 2
DC current gain hFE(1) hFE(1) 80 VCE=5V, IC=1mA 2
DC current gain hFE(2) hFE(2) 100 300 VCE=5V, IC=10mA 2
DC current gain hFE(3) hFE(3) 50 VCE=5V, IC=50mA 2
Collector-emitter saturation voltage VCE(sat)1 VCE(sat)1 0.15 V IC=10mA, IB=1mA 2
Collector-emitter saturation voltage VCE(sat)2 VCE(sat)2 0.2 V IC=50mA, IB=5mA 2
Base-emitter saturation voltage VBE(sat)1 VBE(sat)1 1 V IC=10mA, IB=1mA 2
Base-emitter saturation voltage VBE(sat)2 VBE(sat)2 1 V IC=50mA, IB=5mA 2
Transition frequency fT 100 300 MHz VCE=10V, IC=10mA, f=100MHz 2
Collector output capacitance Cob 6 pF VCB=10V, IE=0, f=1MHz 2
Thermal resistance, junction to ambient R。JA 416 ℃/W 2

CAD (KiCad official)

  • Symbol: MMBT5551-MS
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt5551-ms-etched.step / mmbt5551-ms-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt5551-ms.step / mmbt5551-ms.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (5 pp, sha256 0cc9f6bea0a08488, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF