component

MMBT5551-AU_R1_000A2

Public Made by Adom

by adom

PANJIT International Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsmmbt5551-au_r1_000a2factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
mmbt5551-au-r1-000a2 / README.md
History Download
Ray Publish 0.1.0 2546253 18d ago

MMBT5551-AU_R1_000A2

PANJIT International · Bipolar (BJT) · SOT-23

MMBT5551-AU_R1_000A2 from PANJIT International, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base; emitter-base voltage VEBO max 6 V, with V(BR)EBO min 6 V at IE=10uA.
2 E passive Emitter; collector current IC continuous max 600 mA.
3 C passive Collector; VCEO 160 V and VCBO 180 V max, IC continuous 600 mA.

Key specifications

Parameter Value
Manufacturer PANJIT International
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector - Emitter Breakdown Voltage V(BR)CEO 160 V IC=1mA,IB=0A 2
Collector - Base Breakdown Voltage V(BR)CBO 180 V IC=100uA,IE=0A 2
Emitter - Base Breakdown Voltage V(BR)EBO 6 V IE=10uA,IC=0A 2
Collector - Base Cut-off Current ICBO 50 nA VCB=120V,IE=0A 2
Emitter - Base Cut-off Current IEBO 50 nA VEB=4V,IC=0A 2
DC Current Gain hFE 80 VCE=5V,IC=1mA 2
DC Current Gain hFE 80 250 VCE=5V,IC=10mA 2
DC Current Gain hFE 30 VCE=5V,IC=50mA 2
Collector - Emitter Saturation Voltage VCE(SAT) 150 mV IC=10mA,IB=1mA 2
Collector - Emitter Saturation Voltage VCE(SAT) 200 mV IC=50mA,IB=5mA 2
Base - Emitter Saturation Voltage VBE(SAT) 1 V IC=10mA,IB=1mA 2
Collector-Base Capacitance CCBO 6 pF VCB=10V,IE=0A,f=1MHz 2
Emitter-Base Capacitance CEBO 30 pF VEB=500mV,IC=0A,f=1MHz 2
Transition frequency fT 100 300 MHz IC=10mA,VCE=10V,f=100MHz 2
Collector - Emitter Voltage VCEO 160 V 1
Collector - Base Voltage VCBO 180 V 1
Emitter - Base Voltage VEBO 6 V 1
Collector Current Continuous IC 600 mA 1
Max Power Dissipation PD 250 mW Note 1: mounted on FR-4 PCB, single sided copper, mini pad 1
Thermal Resistance, Junction to Ambient RθJA 325 °C/W Note 1: mounted on FR-4 PCB, single sided copper, mini pad 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 °C 1

CAD (KiCad official)

  • Symbol: MMBT5551-AU_R1_000A2
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt5551-au-r1-000a2-etched.step / mmbt5551-au-r1-000a2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt5551-au-r1-000a2.step / mmbt5551-au-r1-000a2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PANJIT International datasheet (6 pp, sha256 8bf17d4df968bbd2, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF