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MMBT5551-7-F

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Diodes Incorporated Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMBT5551-7-F

Diodes Incorporated · Bipolar (BJT) · SOT-23

MMBT5551-7-F from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; VEBO max 6.0 V, IEBO max 50 nA at VEB = 4V.
2 E passive Emitter of the NPN transistor; emitter-base breakdown voltage BVEBO min 6 V at IE = 10µA.
3 C passive Collector of the NPN transistor; VCEO 160 V, VCBO 180 V, continuous IC up to 600 mA.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Breakdown Voltage BVCBO 180 V IC = 100µA 4
Collector-Emitter Breakdown Voltage BVCEO 160 V IC = 1mA 4
Emitter-Base Breakdown Voltage BVEBO 6 V IE = 10µA 4
Collector Cutoff Current ICBO 50 nA VCB = 120V 4
Collector Cutoff Current ICBO 50 µA VCB = 120V, TA = +100°C 4
Emitter Cutoff Current IEBO 50 nA VEB = 4V 4
DC Current Gain hFE 80 IC = 1.0mA, VCE = 5V 4
DC Current Gain hFE 80 250 IC = 10mA, VCE = 5V 4
DC Current Gain hFE 30 IC = 50mA, VCE = 5V 4
Collector-Emitter Saturation Voltage VCE(sat) 0.15 V IC = 10mA, IB = 1mA 4
Collector-Emitter Saturation Voltage VCE(sat) 0.2 V IC = 50mA, IB = 5mA 4
Base-Emitter Saturation Voltage VBE(sat) 1 V IC = 10mA, IB = 1mA 4
Output Capacitance Cobo 6 pF VCB = 10V, f = 1MHz 4
Small Signal Current Gain hFE 50 250 VCE = 10V, IC = 1mA, f = 1kHz 4
Current Gain-Bandwidth Product ft 100 300 MHz VCE = 10V, IC = 10mA, f = 100MHz 4
Noise Figure nf 8 dB VCE = 5V, IC = 200µA, RS = 1kΩ, f = 1kHz 4
Collector-Base Voltage VCBO 180 V 2
Collector-Emitter Voltage VCEO 160 V 2
Emitter-Base Voltage VEBO 6 V 2
Collector Current - Continuous IC 600 mA 2
Power Dissipation PD 300 mW 2
Thermal Resistance, Junction to Ambient RθJA 417 C/W 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Electrostatic Discharge - Human Body Model ESD HBM 4000 V JEDEC Class 3A 2
Electrostatic Discharge - Machine Model ESD MM 400 V JEDEC Class C 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin  Terminals: Finish, Matte Tin Plated Leads. Solderable per MIL￾STD-202, Method 208  Weight: 0.008 grams (Approximate) 1

CAD (KiCad official)

  • Symbol: MMBT5551-7-F
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt5551-7-f-etched.step / mmbt5551-7-f-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt5551-7-f.step / mmbt5551-7-f.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 df62787a6fb5d209, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF