component

MMBT5551 200-300

Public Made by Adom

by adom

GME(银河微电) Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMBT5551 200-300

GME(银河微电) · Bipolar (BJT) · SOT-23

MMBT5551 200-300 from GME(银河微电), in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; VEBO max 6 V and V(BR)EBO min 6 V at IE = 10μA.
2 E passive Emitter of the NPN transistor; emitter-base breakdown voltage rated 6 V.
3 C passive Collector of the NPN transistor; VCBO 180 V, VCEO 160 V, continuous IC 0.6 A.

Key specifications

Parameter Value
Manufacturer GME(银河微电)
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 180 V TA = 25°C 1
Collector-Emitter Breakdown Voltage VCEO 160 V TA = 25°C 1
Emitter-Base Breakdown Voltage VEBO 6 V TA = 25°C 1
Collector Current (Continuous) IC 0.6 A TA = 25°C 1
Power Dissipation PD 0.35 W TA = 25°C 1
Thermal Resistance Junction-to-Air RθJA 396 °C/W Note 1: surface mounted on 15mm x 15mm x 1mm FR4-epoxy PCB 1
Thermal Resistance Junction-to-Case RθJC 213 °C/W Note 1: surface mounted on 15mm x 15mm x 1mm FR4-epoxy PCB 1
Thermal Resistance Junction-to-Lead RθJL 186 °C/W Note 1: surface mounted on 15mm x 15mm x 1mm FR4-epoxy PCB 1
Junction Temperature Range TJ -55 150 °C 1
Storage Temperature Range TSTG -55 150 °C 1
Collector-Base Breakdown Voltage V(BR)CBO 180 V IC = 100μA, IE = 0 2
Collector-Emitter Breakdown Voltage V(BR)CEO 160 V IC = 0.1mA, IB = 0 2
Emitter-Base Breakdown Voltage V(BR)EBO 6 V IE = 10μA, IC = 0 2
Collector Cut-off Current ICBO 50 nA VCB = 120V, IE = 0 2
Emitter Cut-off Current IEBO 50 nA VEB = 4V, IC = 0 2
DC Current Gain hFE 80 - VCE = 5V, IC = 1mA 2
DC Current Gain (grade 200-300) hFE 200 300 - VCE = 5V, IC = 10mA 2
DC Current Gain hFE 30 - VCE = 5V, IC = 50mA 2
Collector-emitter Saturation Voltage VCE(sat) 0.15 V IC = 10mA, IB = 1mA 2
Collector-emitter Saturation Voltage VCE(sat) 0.2 V IC = 50mA, IB = 5mA 2
Base-emitter Saturation Voltage VBE(sat) 1 V IC = 10mA, IB = 1mA 2
Collector-base Output Capacitance Ccbo 6 pF VCB = 10V, f = 1MHz, IE = 10mA 2
Current-Gain, Bandwidth Product fT 100 300 MHz IC = 10mA, VCE = 10V, f = 100MHz 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin  Terminals: Tin-plated; solderability per MIL-STD-202, Method 208 SOT-23 1

CAD (KiCad official)

  • Symbol: MMBT5551 200-300
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt5551-200-300-etched.step / mmbt5551-200-300-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt5551-200-300.step / mmbt5551-200-300.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GME(银河微电) datasheet (4 pp, sha256 a71432d1b6c0a03b, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF