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MMBT5550LT3G

Public Made by Adom

by adom

onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMBT5550LT3G

onsemi · Bipolar (BJT) · SOT-23

MMBT5550LT3G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the NPN transistor (STYLE 6, pin 1); the device maximum ratings apply, including emitter-base voltage VEBO of 6.0 Vdc and continuous collector current IC of 600 mAdc.
2 EMITTER passive Emitter terminal of the NPN transistor (STYLE 6, pin 2); the device maximum ratings apply, including emitter-base voltage VEBO of 6.0 Vdc.
3 COLLECTOR passive Collector terminal of the NPN transistor (STYLE 6, pin 3); for the MMBT5550 the datasheet lists VCEO of 140 Vdc, VCBO of 160 Vdc and continuous IC of 600 mAdc.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage (MMBT5550) V(BR)CEO 140 Vdc IC = 1.0 mAdc, IB = 0 3
Collector-Base Breakdown Voltage (MMBT5550) V(BR)CBO 160 Vdc IC = 100 Adc, IE = 0 3
Emitter-Base Breakdown Voltage V(BR)EBO 6 Vdc IE = 10 Adc, IC = 0 3
Collector Cutoff Current (MMBT5550, TA = 25°C) ICBO 100 nAdc VCB = 100 Vdc, IE = 0 3
Collector Cutoff Current (MMBT5550, TA = 100°C) ICBO 100 nAdc VCB = 100 Vdc, IE = 0, TA = 100°C 3
Emitter Cutoff Current IEBO 50 nAdc VEB = 4.0 Vdc, IC = 0 3
DC Current Gain (MMBT5550) hFE 60 - IC = 1.0 mAdc, VCE = 5.0 Vdc 3
DC Current Gain (MMBT5550) hFE 20 - IC = 50 mAdc, VCE = 5.0 Vdc 3
Collector-Emitter Saturation Voltage (both types) VCE(sat) 0.15 Vdc IC = 10 mAdc, IB = 1.0 mAdc 3
Collector-Emitter Saturation Voltage (MMBT5550) VCE(sat) 0.25 Vdc IC = 50 mAdc, IB = 5.0 mAdc 3
Base-Emitter Saturation Voltage (both types) VBE(sat) 1 Vdc IC = 10 mAdc, IB = 1.0 mAdc 3
Base-Emitter Saturation Voltage (MMBT5550) VBE(sat) 1.2 Vdc IC = 50 mAdc, IB = 5.0 mAdc 3
Collector Emitter Cut-off Current (both types) ICES 50 nA VCB = 10 V 3
Collector Emitter Cut-off Current ICES 100 nA VCB = 75 V 3
Collector-Emitter Voltage (MMBT5550) VCEO 140 Vdc 2
Collector-Base Voltage (MMBT5550) VCBO 160 Vdc 2
Emitter-Base Voltage VEBO 6 Vdc 2
Collector Current - Continuous IC 600 mAdc 2
Electrostatic Discharge Human Body Model ESD 8000 V Human Body Model 2
Electrostatic Discharge Machine Model ESD 400 V Machine Model 2
Total Device Dissipation FR-5 Board PD 225 mW FR-5 Board (Note 1) @TA = 25°C 2
Total Device Dissipation Alumina Substrate PD 300 mW Alumina Substrate (Note 2) @TA = 25°C 2
Thermal Resistance, Junction-to-Ambient (FR-5 Board) RθJA 556 °C/W FR-5 Board (Note 1) 2
Thermal Resistance, Junction-to-Ambient (Alumina Substrate) RθJA 417 °C/W Alumina Substrate (Note 2) 2
Junction and Storage Temperature TJ, Tstg -55 150 °C 2

CAD (KiCad official)

  • Symbol: MMBT5550LT3G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt5550lt3g-etched.step / mmbt5550lt3g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt5550lt3g.step / mmbt5550lt3g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (8 pp, sha256 a3009b7236dbe8f2, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF