component

MMBT5451DW

Public Made by Adom

by adom

CBI Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsmmbt5451dwfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 16d ago
viewers mmbt5451dw: viewers · Ray 16d ago
mmbt5451dw-etched.glb Publish 0.1.0 · Ray 16d ago
mmbt5451dw-etched.step mmbt5451dw: factory component page (tier=lcsc) · Ray 16d ago
mmbt5451dw-hero.glb mmbt5451dw: hero GLB from the etched model (keeps the MPN mark) · Ray 16d ago
mmbt5451dw-hero.overlay.json Publish 0.1.0 · Ray 16d ago
mmbt5451dw.glb Publish 0.1.0 · Ray 16d ago
mmbt5451dw.kicad_mod Publish 0.1.0 · Ray 16d ago
mmbt5451dw.kicad_sym Publish 0.1.0 · Ray 16d ago
mmbt5451dw.lbr Publish 0.1.0 · Ray 16d ago
mmbt5451dw.step Publish 0.1.0 · Ray 16d ago
package.json Publish 0.1.0 · Ray 16d ago
page.json Set visibility: public · Ray 16d ago
README.md Publish 0.1.0 · Ray 16d ago

MMBT5451DW

CBI · Bipolar (BJT) · SOT-363

MMBT5451DW from CBI, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E1 passive Emitter of the PNP 5401 transistor (VEBO -5 V max, IC -0.2 A continuous).
2 B1 input Base of the PNP 5401 transistor (hFE 100 to 300 at VCE=-5V, IC=-10mA).
3 C2 passive Collector of the NPN 5551 transistor (VCEO 160 V, VCBO 180 V, IC 0.2 A continuous).
4 E2 passive Emitter of the NPN 5551 transistor (VEBO 6 V max).
5 B2 input Base of the NPN 5551 transistor (hFE 100 to 300 at VCE=5V, IC=10mA).
6 C1 passive Collector of the PNP 5401 transistor (VCEO -150 V, VCBO -160 V, IC -0.2 A continuous).

Key specifications

Parameter Value
Manufacturer CBI
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
NPN 5551 Collector-base breakdown voltage V(BR)CBO 180 V IC=100A,IE=0 1
NPN 5551 Collector-emitter breakdown voltage V(BR)CEO 160 V IC=1mA,IB=0 1
NPN 5551 Emitter-base breakdown voltage V(BR)EBO 6 V IE=10A,IC=0 1
NPN 5551 Collector cut-off current ICBO 0.05 A VCB=120V,IE=0 1
NPN 5551 Emitter cut-off current IEBO 0.05 A VEB=4V,IC=0 1
NPN 5551 DC current gain hFE1 80 VCE=5V,IC=1mA 1
NPN 5551 DC current gain hFE2 100 300 VCE=5V,IC=10mA 1
NPN 5551 DC current gain hFE3 30 VCE=5V,IC=50mA 1
NPN 5551 Collector-emitter saturation voltage VCE(sat) 0.15 V IC=10mA, IB=1mA 1
NPN 5551 Collector-emitter saturation voltage VCE(sat) 0.2 V IC=50mA, IB=5mA 1
NPN 5551 Base-emitter saturation voltage VBE(sat) 1 V IC=10mA, IB=1mA 1
NPN 5551 Output Capacitance Cobo 6 pF VCB = 10V, f = 1.0MHz, IE = 0 1
NPN 5551 Current Gain-Bandwidth Product fT 100 300 MHz VCE = 10V, IC = 10mA, f = 100MHz 1
NPN 5551 Noise Figure NF 8 dB VCE= 5.0V, IC = 200μA, RS = 1.0k, f = 1.0kHz 1
PNP 5401 Collector-base breakdown voltage V(BR)CBO -160 V IC=-100A,IE=0 2
PNP 5401 Collector-emitter breakdown voltage V(BR)CEO -150 V IC=-1mA,IB=0 2
PNP 5401 Emitter-base breakdown voltage V(BR)EBO -5 V IE=-10A,IC=0 2
PNP 5401 Collector cut-off current ICBO -50 nA VCB=-120V,IE=0 2
PNP 5401 Emitter cut-off current IEBO -50 nA VEB=-3V,IC=0 2
PNP 5401 DC current gain hFE1 50 VCE=-5V,IC=-1mA 2
PNP 5401 DC current gain hFE2 100 300 VCE=-5V,IC=-10mA 2
PNP 5401 Collector-emitter saturation voltage VCE(sat) -0.2 V IC=-10mA, IB=-1mA 2
PNP 5401 Collector-emitter saturation voltage VCE(sat) -0.5 V IC=-50mA, IB=-5mA 2
PNP 5401 Base-emitter saturation voltage VBE(sat) -1 V IC=-10mA, IB=-1mA 2
PNP 5401 Output Capacitance Cobo 6 pF VCB =-10V, f = 1.0MHz, IE = 0 2
PNP 5401 Current Gain-Bandwidth Product fT 100 300 MHz VCE =-10V, IC =-10mA, f = 100MHz 2
PNP 5401 Noise Figure NF 8 dB VCE=-5.0V, IC =-200μA, RS = 10, f = 1.0kHz 2
NPN 5551 Collector-base voltage VCBO 180 V 1
NPN 5551 Collector-emitter voltage VCEO 160 V 1
NPN 5551 Emitter-base voltage VEBO 6 V 1
NPN 5551 Collector current -Continuous IC 0.2 A 1
NPN 5551 Collector power dissipation PC 0.2 W 1
NPN 5551 Junction temperature TJ 150 1
NPN 5551 Storage temperature Tstg -55 150 1
NPN 5551 Thermal resistance, junction to ambient RθJA 625 /W 1
PNP 5401 Collector-base voltage VCBO -160 V 2
PNP 5401 Collector-emitter voltage VCEO -150 V 2
PNP 5401 Emitter-base voltage VEBO -5 V 2
PNP 5401 Collector current -Continuous IC -0.2 A 2
PNP 5401 Collector power dissipation PC 0.2 W 2
PNP 5401 Junction temperature TJ 150 2
PNP 5401 Storage temperature Tstg -55 150 2
PNP 5401 Thermal resistance, junction to ambient RθJA 625 /W 2

CAD (KiCad official)

  • Symbol: MMBT5451DW
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: mmbt5451dw-etched.step / mmbt5451dw-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt5451dw.step / mmbt5451dw.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: CBI datasheet (3 pp, sha256 3c20ef2731173f78, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF