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Ray Publish 0.1.0 0a7c94d 13d ago

MMBT5401WT1G-HXY

HXY MOSFET · Bipolar (BJT) · SOT-323

MMBT5401WT1G-HXY from HXY MOSFET, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B passive Base of the PNP transistor; the emitter-base voltage must not exceed -5 V (VEBO), and DC gain is specified at IC = -1 mA to -50 mA.
2 E passive Emitter of the PNP transistor; the maximum emitter-base voltage is -5 V (VEBO).
3 C passive Collector of the PNP transistor; the maximum collector-base voltage is -160 V (VCBO), collector-emitter voltage -150 V (VCEO) and continuous collector current -600 mA.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-323
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: MMBT5401WT1G-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: mmbt5401wt1g-hxy-etched.step / mmbt5401wt1g-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt5401wt1g-hxy.step / mmbt5401wt1g-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 20308dcb855a6a70, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF