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MMBT5401-G

Changjing · Bipolar (BJT) · SOT-23

MMBT5401-G from Changjing, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the PNP transistor; the datasheet gives no separate pin limit, with the absolute maximum ratings applying to the device (VEBO -5 V, IC -0.6 A).
2 EMITTER passive Emitter terminal of the PNP transistor; the emitter-base breakdown voltage V(BR)EBO is -5 V minimum and the emitter cut-off current is specified at VEB=-4V.
3 COLLECTOR passive Collector terminal of the PNP transistor; the collector-emitter voltage is rated at -150 V (VCEO) and the collector current at -0.6 A, with a collector power dissipation of 0.3 W.

Key specifications

Parameter Value
Manufacturer Changjing
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO -160 V IC=-100µA, IE=0 1
Collector-emitter breakdown voltage V(BR)CEO* -150 V IC=-1mA, IB=0 1
Emitter-base breakdown voltage V(BR)EBO -5 V IE=-10µA, IC=0 1
Collector cut-off current ICBO -0.1 μA VCB=-120V, IE=0 1
Emitter cut-off current IEBO -0.1 μA VEB=-4V, IC=0 1
DC current gain hFE(1) hFE(1)* 80 VCE=-5V, IC=-1mA 1
DC current gain hFE(2) hFE(2)* 100 300 VCE=-5V, IC=-10mA 1
DC current gain hFE(3) hFE(3)* 50 VCE=-5V, IC=-50mA 1
Collector-emitter saturation voltage VCE(sat)1* -0.2 V IC=-10mA, IB=-1mA 1
Collector-emitter saturation voltage VCE(sat)2* -0.5 V IC=-50mA, IB=-5mA 1
Base-emitter saturation voltage VBE(sat)1* -1 V IC=-10mA, IB=-1mA 1
Transition frequency fT 100 MHz VCE=-5V, IC=-10mA, f=30MHz 1
Collector-Base Voltage VCBO -160 V 1
Collector-Emitter Voltage VCEO -150 V 1
Emitter-Base Voltage VEBO -5 V 1
Collector Current IC -0.6 A 1
Collector Power Dissipation PC 0.3 W 1
Junction Temperature Tj 150 ℃ 1
Storage Temperature Tstg -55 150 ℃ 1
Thermal Resistance from Junction to Ambient RΘJA 416 ℃/W 1

CAD (KiCad official)

  • Symbol: MMBT5401-G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt5401-g-etched.step / mmbt5401-g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt5401-g.step / mmbt5401-g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (4 pp, sha256 b234d3f5e91a0474, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF