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MMBT5087LT3G

Public Made by Adom

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onsemi Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMBT5087LT3G

onsemi · Bipolar Transistors - BJT · SOT-23

MMBT5087LT3G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the PNP transistor; the datasheet gives VBE(sat) of 0.85 Vdc max at IC = -10 mAdc, IB = -1.0 mAdc.
2 EMITTER passive Emitter terminal of the PNP transistor; the emitter-base voltage is rated VEBO = -3.0 Vdc.
3 COLLECTOR passive Collector terminal of the PNP transistor; the collector-emitter voltage is rated VCEO = -50 Vdc and the continuous collector current IC = -50 mAdc.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage V(BR)CEO -50 Vdc IC = -1.0 mAdc, IB = 0 3
Collector-Base Breakdown Voltage V(BR)CBO -50 Vdc IC = -100 Adc, IE = 0 3
Collector Cutoff Current ICBO -10 nAdc VCB = -10 Vdc, IE = 0 3
Collector Cutoff Current ICBO -50 nAdc VCB = -35 Vdc, IE = 0 3
DC Current Gain hFE 250 IC = -100 Adc, VCE = -5.0 Vdc 3
DC Current Gain hFE 250 800 3
Collector-Emitter Saturation Voltage VCE(sat) -0.3 Vdc IC = -10 mAdc, IB = -1.0 mAdc 3
Base-Emitter Saturation Voltage VBE(sat) 0.85 Vdc IC = -10 mAdc, IB = -1.0 mAdc 3
Current-Gain Bandwidth Product fT 40 MHz IC = -500 Adc, VCE = -5.0 Vdc, f = 20 MHz 3
Output Capacitance Cobo 4 pF VCB = -5.0 Vdc, IE = 0, f = 1.0 MHz 3
Small-Signal Current Gain hfe 250 900 IC = -1.0 mAdc, VCE = -5.0 Vdc, f = 1.0 kHz 3
Noise Figure NF 2 dB IC = -20 mAdc, VCE = -5.0 Vdc, RS = 10 k, f = 1.0 kHz 3
Collector-Emitter Voltage VCEO -50 Vdc 2
Collector-Base Voltage VCBO -50 Vdc 2
Emitter-Base Voltage VEBO -3 Vdc 2
Collector Current - Continuous IC -50 mAdc 2
Junction and Storage Temperature TJ, Tstg -55 150 °C 2
Total Device Dissipation PD 225 mW FR-5 Board, TA = 25°C 2
Total Device Dissipation PD 300 mW Alumina Substrate, TA = 25°C 2
Thermal Resistance, Junction-to-Ambient RJA 556 °C/W FR-5 Board 2
Thermal Resistance, Junction-to-Ambient RJA 417 °C/W Alumina Substrate 2

CAD (KiCad official)

  • Symbol: MMBT5087LT3G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt5087lt3g-etched.step / mmbt5087lt3g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt5087lt3g.step / mmbt5087lt3g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (9 pp, sha256 de5cb2bdd00c3536, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF