component

MMBT5087LT1G

Public Made by Adom

by adom

onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMBT5087LT1G

onsemi · Bipolar (BJT) · SOT-23

MMBT5087LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the PNP low-noise transistor; the datasheet gives the device's maximum emitter-base voltage as −3.0 Vdc (VEBO) and its noise figure test conditions as the characterization context.
2 EMITTER passive Emitter terminal of the PNP low-noise transistor; the datasheet gives the emitter-base voltage limit VEBO of −3.0 Vdc and a maximum continuous collector current of −50 mAdc for the device.
3 COLLECTOR passive Collector terminal of the PNP low-noise transistor; the datasheet gives the collector-emitter voltage limit VCEO of −50 Vdc and collector-base voltage VCBO of −50 Vdc.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector−Emitter Voltage VCEO -50 Vdc 1
Collector−Base Voltage VCBO -50 Vdc 1
Emitter−Base Voltage VEBO -3 Vdc 1
Collector Current − Continuous IC -50 mAdc 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1
Total Device Dissipation, FR−5 Board PD 225 mW TA = 25°C (Note 1) 1
Total Device Dissipation, Alumina Substrate PD 300 mW TA = 25°C (Note 2) 1
Thermal Resistance, Junction−to−Ambient, FR−5 Board RθJA 556 °C/W (Note 1) 1
Thermal Resistance, Junction−to−Ambient, Alumina Substrate RθJA 417 °C/W (Note 2) 1
Collector−Emitter Breakdown Voltage V(BR)CEO -50 Vdc IC = −1.0 mAdc, IB = 0 2
Collector−Base Breakdown Voltage V(BR)CBO -50 Vdc IC = −100 Adc, IE = 0 2
Collector Cutoff Current ICBO -10 nAdc VCB = −10 Vdc, IE = 0 2
Collector Cutoff Current ICBO -50 nAdc VCB = −35 Vdc, IE = 0 2
DC Current Gain hFE 250 IC = −100 Adc, VCE = −5.0 Vdc 2
DC Current Gain (maximum column) hFE 800 2
Collector−Emitter Saturation Voltage VCE(sat) -0.3 Vdc IC = −10 mAdc, IB = −1.0 mAdc 2
Base−Emitter Saturation Voltage VBE(sat) 0.85 Vdc IC = −10 mAdc, IB = −1.0 mAdc 2
Current−Gain, Bandwidth Product fT 40 MHz IC = −500 Adc, VCE = −5.0 Vdc, f = 20 MHz 2
Output Capacitance Cobo 4 pF VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz 2
Small−Signal Current Gain hfe 250 900 IC = −1.0 mAdc, VCE = −5.0 Vdc, f = 1.0 kHz 2
Noise Figure NF 2 dB IC = −20 mAdc, VCE = −5.0 Vdc, RS = 10 k, f = 1.0 kHz 2

CAD (KiCad official)

  • Symbol: MMBT5087LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt5087lt1g-etched.step / mmbt5087lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt5087lt1g.step / mmbt5087lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (8 pp, sha256 30297c238e8653ac, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF