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MMBT4403M3T5G

Public Made by Adom

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onsemi Bipolar Transistors - BJT, SOT-723. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMBT4403M3T5G

onsemi · Bipolar Transistors - BJT · SOT-723

MMBT4403M3T5G from onsemi, in a SOT-723. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base of the PNP switching transistor; emitter-base voltage limited to -5.0 Vdc (VEBO).
2 EMITTER passive Emitter of the PNP transistor; VCEO -40 Vdc and continuous collector current -600 mAdc flow between collector and emitter.
3 COLLECTOR passive Collector of the PNP transistor; rated VCEO -40 Vdc, VCBO -40 Vdc and IC -600 mAdc continuous.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-723
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCEO -40 Vdc 2
Collector-Base Voltage VCBO -40 Vdc 2
Emitter-Base Voltage VEBO -5 Vdc 2
Collector Current - Continuous IC -600 mAdc 2
Total Device Dissipation FR-5 Board PD 265 mW FR-5 Board (Note 1), TA = 25°C 2
Total Device Dissipation Alumina Substrate PD 640 mW Alumina Substrate (Note 2), TA = 25°C 2
Thermal Resistance Junction-to-Ambient (FR-5) RθJA 470 °C/W FR-5 Board 2
Thermal Resistance Junction-to-Ambient (Alumina) RθJA 195 °C/W Alumina Substrate 2
Junction and Storage Temperature TJ, Tstg -55 150 °C 2
Collector-Emitter Breakdown Voltage V(BR)CEO -40 Vdc IC = -1.0 mAdc, IB = 0 3
Collector-Base Breakdown Voltage V(BR)CBO -40 Vdc IC = -0.1 mAdc, IE = 0 3
Emitter-Base Breakdown Voltage V(BR)EBO -5 Vdc IE = -0.1 mAdc, IC = 0 3
Base Cutoff Current IBEV -0.1 µAdc VCE = -35 Vdc, VEB = -0.4 Vdc 3
Collector Cutoff Current ICEX -0.1 µAdc VCE = -35 Vdc, VEB = -0.4 Vdc 3
DC Current Gain hFE 30 IC = -0.1 mAdc, VCE = -1.0 Vdc 3
DC Current Gain hFE 60 IC = -1.0 mAdc, VCE = -1.0 Vdc 3
DC Current Gain hFE 100 IC = -10 mAdc, VCE = -1.0 Vdc 3
DC Current Gain hFE 100 300 IC = -150 mAdc, VCE = -2.0 Vdc (Note 3) 3
DC Current Gain hFE 20 IC = -500 mAdc, VCE = -2.0 Vdc (Note 3) 3
Collector-Emitter Saturation Voltage VCE(sat) -0.4 Vdc IC = -150 mAdc, IB = -15 mAdc 3
Collector-Emitter Saturation Voltage VCE(sat) -0.75 Vdc IC = -500 mAdc, IB = -50 mAdc 3
Base-Emitter Saturation Voltage VBE(sat) -0.75 -0.95 Vdc IC = -150 mAdc, IB = -15 mAdc 3
Base-Emitter Saturation Voltage VBE(sat) -1.3 Vdc IC = -500 mAdc, IB = -50 mAdc 3
Current-Gain Bandwidth Product fT 200 MHz IC = -20 mAdc, VCE = -10 Vdc, f = 100 MHz 3
Collector-Base Capacitance Ccb 8.5 pF VCB = -10 Vdc, IE = 0, f = 1.0 MHz 3
Emitter-Base Capacitance Ceb 30 pF VBE = -0.5 Vdc, IC = 0, f = 1.0 MHz 3
Input Impedance hie 1.5 15 kΩ IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz 3
Voltage Feedback Ratio hre 0.1 8 X 10-4 IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz 3
Small-Signal Current Gain hfe 60 500 IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz 3
Output Admittance hoe 1 100 µMhos IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz 3
Delay Time td 15 ns VCC = -30 Vdc, VEB = -2.0 Vdc, IC = -150 mAdc, IB1 = -15 mAdc 3
Rise Time tr 20 ns VCC = -30 Vdc, VEB = -2.0 Vdc, IC = -150 mAdc, IB1 = -15 mAdc 3
Storage Time ts 225 ns VCC = -30 Vdc, IC = -150 mAdc, IB1 = IB2 = -15 mAdc 3
Fall Time tf 30 ns VCC = -30 Vdc, IC = -150 mAdc, IB1 = IB2 = -15 mAdc 3

CAD (KiCad official)

  • Symbol: MMBT4403M3T5G
  • Footprint: Package_TO_SOT_SMD:SOT-723
  • 3D model: SOT-723, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.5 mm nominal SOT-723 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
  • 3D model files: mmbt4403m3t5g-etched.step / mmbt4403m3t5g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt4403m3t5g.step / mmbt4403m3t5g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (6 pp, sha256 10fca1cdc6b14408, retrieved 2026-10-26, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF