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MMBT4403_R1_00001

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PANJIT International Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMBT4403_R1_00001

PANJIT International · Bipolar (BJT) · SOT-23

MMBT4403_R1_00001 from PANJIT International, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base passive Base terminal of the PNP transistor; the datasheet gives base cutoff current IBEV of -100 nA max at VCE=-35V, VEB=-0.4V.
2 Emitter passive Emitter terminal of the PNP transistor; emitter-base breakdown voltage V(BR)EBO is -5.0 V min at IE=-100uA.
3 Collector passive Collector terminal of the PNP transistor; rated VCEO -40 V and continuous collector current IC -600 mA, with max power dissipation of 225 mW.

Key specifications

Parameter Value
Manufacturer PANJIT International
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector - Emitter Voltage VCEO -40 V 1
Collector - Base Voltage VCBO -40 V 1
Emitter - Base Voltage VEBO -5 V 1
Collector Current - Continuous IC -600 mA 1
Max Power Dissipation PTOT 225 mW Note 1: transistor mounted on FR-4 board 70 x 60 x 1mm, minimum recommended pad 1
Junction and Storage Temperature Range TJ, TSTG -55 150 ℃ 1
Collector - Emitter Breakdown Voltage V(BR)CEO -40 V IC=-1.0mA, IB=0 2
Collector - Base Breakdown Voltage V(BR)CBO -40 V IC=-100uA, IE=0 2
Emitter - Base Breakdown Voltage V(BR)EBO -5 V IE=-100uA, IC=0 2
Base Cutoff Current IBEV -100 nA VCE=-35V, VEB=-0.4V 2
Collector Cutoff Current ICEX -100 nA VCE=-35V, VEB=-0.4V 2
DC Current Gain hFE 30 IC=-0.1mA, VCE=-1.0V 2
DC Current Gain hFE 60 IC=-1.0mA, VCE=-1.0V 2
DC Current Gain hFE 100 IC=-10mA, VCE=-1.0V 2
DC Current Gain hFE 100 300 IC=-150mA, VCE=-2.0V 2
DC Current Gain hFE 20 IC=-500mA, VCE=-2.0V 2
Collector - Emitter Saturation Voltage VCE(SAT) -0.4 V IC=-150mA, IB=-15 mA 2
Collector - Emitter Saturation Voltage VCE(SAT) -0.75 V IC=-500mA, IB=-50mA 2
Base - Emitter Saturation Voltage VBE(SAT) -0.75 -0.95 V IC=-150mA, IB=-15mA 2
Base - Emitter Saturation Voltage VBE(SAT) -1.3 V IC=-500mA, IB=-50mA 2
Current-Gain, Bandwidth Product fT 200 MHz IC=-20mA, VCE=-10V, f=100MHz 2
Collector - Base Capacitance CCBO 8.5 pF VCB=-5.0V, IE=0, f=1MHz 2
Emitter - Base Capacitance CEBO 30 pF VCB=-0.5V, IC=0, f=1MHz 2
Delay Time td 15 ns 2
Rise Time tr 20 ns VCC=-30V, VBE=-2.0V, IC=-150mA, IB1=-15mA 2
Storage Time ts 225 ns 2
Fall Time tf 30 ns VCC=-30V, IC=-150mA, IB1=IB2=15mA 2
Thermal Resistance, Junction to Ambient RθJA 556 ℃/W Note 1: transistor mounted on FR-4 board 70 x 60 x 1mm, minimum recommended pad 1

CAD (KiCad official)

  • Symbol: MMBT4403_R1_00001
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt4403-r1-00001-etched.step / mmbt4403-r1-00001-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt4403-r1-00001.step / mmbt4403-r1-00001.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PANJIT International datasheet (6 pp, sha256 9dd50f46d00c8804, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF